• Title/Summary/Keyword: High doping

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Tialite계 세라믹 안료의 합성 및 유약에서의 발색 (Synthesis of Tialite Ceramic Pigments and Coloring in Glazes)

  • 김연주;이병하
    • 한국재료학회지
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    • 제21권8호
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    • pp.450-455
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    • 2011
  • [ $Al_2TiO_5$ ]has a high refractive index and good solubility of the chromophore in the $Al_2TiO_5$ lattice, which allows this structure to be a good candidate for the development of new ceramic pigments. However, pure $Al_2TiO_5$ is well known to decompose on firing at $900{\sim}1100^{\circ}C$. However, this process can be inhibited by the incorporation of certain metal cations into its crystalline lattice. In this study, the synthesis of gray ceramic pigment was performed by doping cobalt on the $Al_2TiO_5$ crystal structure. The $Al_2TiO_5$ was synthesized using $Al_2O_3$ and $TiO_2$, and doped with $Co_3O_4$ as a chromophore material. In order to prevent the thermal decomposition during the cooling procedure, MgO was added to samples by 0.05 mole, 0.1 mole, and 0.15 mole as a stabilizer. The samples were fired at $1500^{\circ}C$ for 2 hours and cooled naturally. The crystal structure, solubility limit, and color of the synthesized pigment were analyzed using XRD, Raman spectroscopy, UV, and UV-vis. $Al_2O_3$ was available for the formation of $CoAl_2O_4$, which should also be considered in order to explain the small amount of this phase detected in the sample with the higher $Co^{2+}$ content (${\geq}$ 0.03 mole). It was found that the solubility limit of $Co^{2+}$ in the $Al_2TiO_5$ crystal was 0.02 mole% through an analysis of Raman spectroscopy. Through the addition of a pigment with 0.02 mole% of $Co^{2+}$ to lime-barium glaze, stabilized gray color pigments with 66.54, -2.35, and 4.68 as CIE-$L^*a^*b^*$ were synthesized.

Inorganic Printable Materials for Thin-Film Transistors: Conductor and Semiconductor

  • Jeong, Sun-Ho;Song, Hae-Chon;Lee, Byung-Seok;Lee, Ji-Yoon;Choi, Young-Min;Ryu, Beyong-Hwan
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.18.2-18.2
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    • 2010
  • For the past a few years, we have intensively researched the printable inorganic conductors and ZnO-based amorphous oxide semiconductors (AOSs) for thin-film transistors. For printable conductor materials, we have focused on the aqueous Ag and Cu ink which possess a variety of advantages, comparing with the conventional metal inks based on organic solvent system. The aqueous Ag ink was designed to achieve the long-term dispersion stability using a specific polymer which can act as a dispersant and capping agent, and the aqueous Cu ink was carefully formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. For printable ZnO-based AOSs, we have researched the noble way to resolve the critical problem, a high processing-temperature above $400^{\circ}C$, and recently discovered that Ga doping in ZnO-based AOSs promotes the formation of oxide lattice structures with oxygen vacancies at low annealing-temperatures, which is essential for acceptable thin-film transistor performance. The mobility dependence on annealing temperature and AOS composition was analyzed, and the chemical role of Ga are clarified, as are requirements for solution-processed, low-temperature annealed AOSs.

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Eutectic-based Phase-change Recording Materials for 1-2X and 4X Speed Blu-ray Disc

  • Seo Hun;Lee Seung-Yoon;Lee Kwang- Lyul;Kim Jin-Hong;Bae Byeong-Soo
    • 정보저장시스템학회논문집
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    • 제1권1호
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    • pp.34-41
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    • 2005
  • We report some recent results in the rewritable Blu-ray Disc with enhanced overwrite cyclability by using the growth dominant eutectic based Ge(Sb70Te30)+Sb recording layer, GeN interface layer and write strategy optimization. We have developed phase-change optical media with appropriate write strategy for 36(i.e., 1X)-72Mbps(i.e., 2X) dual speed Blu-ray Disc system and fur the future high speed optical data storage. For recording layer, eutectic-based Ge(Sb70Te30)+Sb material was used and Sb/Te ratio and Ge content were optimized to obtain proper erasability and archival stability of recorded amorphous marks. The recording layer is wrapped up in GeN interface layers to obtain overwrite cyclability and higher crystallization speed. In addition, we designed appropriate write strategy so called Time-Shifted Multipulse (TSMP) write strategy where starting position of multipulse parts are shined from reference clock. With this write strategy, the jitter characteristics of the disc was improved and we found that leading edge jitter was improved much more than trailing edge jitter in 1X-2X speed recording. Finally, we investigated the higher speed feasibility of 144Mbps(i.e., 4X) by adopting some elemental doping to the eutectic based Ag-In-Sb-Te recording layer and structural optimization of constitution layers in Blu-ray Disc. In the paper, we report the effect of Sn addition for the feasibility of higher speed recording. The addition of Sn shows increases of the crystallization speed of phase change recording layer.

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다공성 탄소계 재료를 이용한 수소저장 기술 (Hydrogen Storage Technology by Using Porous Carbon Materials)

  • 이영석;임지선
    • 공업화학
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    • 제20권5호
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    • pp.465-472
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    • 2009
  • 본 총설에서는 최근 주로 연구되고 있는 활성탄, 탄소나노튜브, 팽창 흑연 및 활성 탄소 섬유 등 다공성 탄소재료를 중심으로 수소 저장량을 증대시키기 위한 기술 및 기 발표된 수소저장량과 그 장 단점에 대하여 고찰하였다. 수소저장능을 향상시키기 위한 탄소 내 기공의 최적의 크기는 0.6~0.7 nm로 조사되었다. 촉매의 경우 전이금속 및 그 금속산화물이 많이 이용되었으며, 주로 다공성 탄소재료에 도핑을 통해 수소저장능을 향상시켰다. 수소저장 매체인 다공성 탄소재료 중에서 활성탄은 대량생산이 가능하여 가격이 비교적 저렴한 장점이 있고 탄소나노튜브는 튜브의 튜브간 공간 외에도 내부공간에 수소를 저장할 수 있는 공간이 수소저장에 활용될 수 있다는 장점이 있다. 팽창 흑연은 흑연의 층 사이에 알칼리 금속의 삽입 시 층간 거리가 팽창하여 수소저장에 용이하고, 활성탄소섬유는 높은 비표면적과 발달된 미세기공이 수소흡착에 크게 기여한다는 점이 있다. 이러한 기존의 연구로 고려해 볼 때 다공성 탄소재료는 아직 달성되지 못한 DOE의 수소저장 목표치에 도달하기 위한 주요 유망한 후보재료 중의 하나이다.

As 이온 주입된 비정질 탄소 박막의 마이크로플라즈마 화학기상증착법에 의한 자동 어닐링 효과에 관한 연구 (Self Annealing Effects of Arsenic Ion Implanted Amorphous Carbon Films during Microwave Plasma Chemical Vapor Deposition)

  • 조의식;권상직
    • 한국진공학회지
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    • 제22권1호
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    • pp.31-36
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    • 2013
  • 마이크로플라즈마 화학기상증착법(microwave plasma enhanced chemical vapor deposition, MPCVD)에 의하여 형성된 비정질 탄소 박막의 효율적인 도핑 공정을 위하여, 비정질 탄소 박막의 성장 직전 nucleated seed 상태의 기판 혹은 일부 성장된 박막 위에 비소(As) 이온을 이온 주입하였고 그 직후 다시 MPCVD에 의하여 박막을 성장시켰다. MPCVD에 의한 성장 자체가 약 $500{\sim}600^{\circ}C$ 온도에서의 어닐링 공정을 대체할 수 있으므로, 기존의 이온 주입 후 별도의 어닐링 공정과 비교 시 간략화된 공정으로도 어닐링 효과가 있다고 할 수 있다. 이온 주입 후 박막 성장으로 어닐링 효과를 얻은 비정질 탄소 박막의 경우, $2.5V/{\mu}m$의 전계에서 약 $0.1mA/cm^2$의 전계 방출 특성을 관찰할 수 있었고 또한 라만 스펙트럼 특성에서도 다이아몬드 특성 및 그래파이트 특성 모두 뚜렷이 관찰되었다. 전기적, 구조적 특성 관찰로부터 이온 주입된 As 이온이 자동 어닐링 효과에 의해 충분히 비정질 탄소 박막에 도핑되었다고 할 수 있다.

가시광 활성 WO3-TiO2 복합체 광촉매의 제조 및 이의 특성 평가 (Preparation of WO3-TiO2 Photocatalyst and Evaluation of Its Photo-activity in the Visible Light Range)

  • 여인철;강인철
    • 한국분말재료학회지
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    • 제20권6호
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    • pp.474-478
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    • 2013
  • The most general photocatalyst, $TiO_2$ and $WO_3$, are acknowledged to be ineffective in range of visible light. Therefore, many efforts have been directed at improving their activity such as: band-gap narrowing with non-metal element doping and making composites with high specific surface area to effectively separate electrons and holes. In this paper, the method was introduced to prepare a photo-active catalyst to visible irradiation by making a mixture with $TiO_2$ and $WO_3$. In the $TiO_2-WO_3$ composite, $WO_3$ absorbs visible light creating excited electrons and holes while some of the excited electrons move to $TiO_2$ and the holes remain in $WO_3$. This charge separation reduces electron-hole recombination resulting in an enhancement of photocatalytic activity. Added Ag plays the role of electron acceptor, retarding the recombination rate of excited electrons and holes. In making a mixture of $TiO_2-WO_3$ composite, the mixing route affects the photocatalytic activity. The planetary ball-mill method is more effective than magnetic stirring route, owing to a more effective dispersion of aggregated powders. The volume ratio of $TiO_2(4)$ and $WO_3(6)$ shows the most effective photocatalytic activity in the range of visible light in the view point of effective separation of electrons and holes.

$[BaTiO_3]_{0.9}+[BaZrO_3, SnO_2, La_2O_3, ZrO_2]_{0.1}$의 Dielectric Properties 및 Temperature Characteristics에 미치는 $Bi_2O_3$의 영향 (Effect of $Bi_2O_3$ on Dielectric Properties and Temperature Characteristics of $[BaTiO_3]_{0.9}+[BaZrO_3, SnO_2, La_2O_3, ZrO_2]_{0.1}$)

  • 이병하;이경희;윤영호;손상철;유광수
    • 한국세라믹학회지
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    • 제30권5호
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    • pp.397-403
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    • 1993
  • Widely used dielectrics, barium titanate was promising material for ceramic capacitor. It was produced by specific formulation with various dopants-La2O3, ZrO2, SnO2, CaZrO3, CaTiO3, CaSnO3, Bi2O3, and etc.-according to demanded properties of capacitor. In this study, we would examinate the study of dielectric properties and temperatuer characteristics (T.C.) with the amount of Bi2O3. The sample was prepared with [BaTiO3]10+[BaZrO3, SnO2, La2O3, ZrO2]10 and Bi2O3 varied from 1.0, 1.5, 2.0, 2.5 to 3.0wt%. After milling and mixing for 15hrs, each sample was dried and then pressed at 700kg/$\textrm{cm}^2$ into pellets. Pellets were fired at 131$0^{\circ}C$, for 3hrs in air. As the result of measurements, dielectric constant, break down voltage, and insulation resistance were increased with the amount of Bi2O3, and the resonant frequency was shifted from high frequency to low frequency range. In the case of temperature characteristics, capacitance change rate was symmetrically changed at -$25^{\circ}C$ and +85$^{\circ}C$ respectively. Therefore, it is recognized that the temperature characteristics can be moderated with doping Bi2O3 in our study.

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a-Se에 첨가된 Iodine의 조성비 변화에 따른 X선 검출특성 연구 (The Study on X-ray Detection Characteristics of Radiation Detective Sensor with Changing Composition Ratio of Iodine in a-Se)

  • 차병열;강상식;이규홍;김재형;남상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.399-402
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    • 2002
  • This paper is researched that electric characteristic of Digital x-ray radiography technique with changing composition ratio of Iodine. Dopant material, Iodine is evaporated with amorphous selenium. Thorugh the old papers say, doponted Iodine will be down the created trap level because of Arsenic dopant material in amorphous selenium. Arsenic material of Composition ratio in amorphous selenium is fixed with 0.3% and test sample is deposited composition of 30, 100, 300, 500, 700ppm with thermal evaporate system. Experimental measurement is performed by dark current and x-ray sensitivity in amorphous selenium based radition detector sensor. Fabricated test sample thickness is $30{\mu}m$ and injected voltage is $3{\mu}m$$6{\mu}m$$9{\mu}m$ to both electrode. Experimental results showed that the net charge of composition rate of 30ppm is 398.88 pc/mR/$cm^2$ very high. And increase of the Iodine composition ratio is tendency to the decrease of net charge. Doping changing composition of Iodine in amorphous selenium detector offered to basical information of amorphous selenium material.

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Properties of ZnO:Al Films Prepared by Spin Coating of Aged Precursor Solution

  • Shrestha, Shankar Prasad;Ghimire, Rishi;Nakarmi, Jeevan Jyoti;Kim, Young-Sung;Shrestha, Sabita;Park, Chong-Yun;Boo, Jin-Hyo
    • Bulletin of the Korean Chemical Society
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    • 제31권1호
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    • pp.112-115
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    • 2010
  • Transparent conducting undoped and Al impurity doped ZnO films were deposited on glass substrate by spin coat technique using 24 days aged ZnO precursor solution with solution of ethanol and diethanolamine. The films were characterized by UV-Visible spectroscopy, X-ray diffraction (XRD), scanning electron microscope (SEM), electrical resistivity ($\rho$), carrier concentration (n), and hall mobility ($\mu$) measurements. XRD data show that the deposited film shows polycrystalline nature with hexagonal wurtzite structure with preferential orientation along (002) crystal plane. The SEM images show that surface morphology, porosity and grain sizes are affected by doping concentration. The Al doped samples show high transmittance and better resistivity. With increasing Al concentration only mild change in optical band gap is observed. Optical properties are not affected by aging of parent solution. A lowest resistivity ($8.5 \times 10^{-2}$ ohm cm) is observed at 2 atomic percent (at.%) Al. With further increase in Al concentration, the resistivity started to increase significantly. The decrease resistivity with increasing Al concentration can be attributed to increase in both carrier concentration and hall mobility.

Reduced graphene oxide field-effect transistor for biomolecule detection and study of sensing mechanism

  • Kim, D.J.;Sohn, I.Y.;Kim, D.I.;Yoon, O.J.;Yang, C.W.;Lee, N.E.;Park, J.S.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.431-431
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    • 2011
  • Graphene, two dimensional sheet of sp2-hybridized carbon, has attracted an enormous amount of interest due to excellent electrical, chemical and mechanical properties for the application of transparent conducting films, clean energy devices, field-effect transistors, optoelectronic devices and chemical sensors. Especially, graphene is promising candidate to detect the gas molecules and biomolecules due to the large specific surface area and signal-to-noise ratios. Despite of importance to the disease diagnosis, there are a few reports to demonstrate the graphene- and rGO-FET for biological sensors and the sensing mechanism are not fully understood. Here we describe scalable and facile fabrication of rGO-FET with the capability of label-free, ultrasensitive electrical detection of a cancer biomarker, prostate specific antigen/${\alpha}1$-antichymotrypsin (PSA-ACT) complex, in which the ultrathin rGO sensing channel was simply formed by a uniform self-assembly of two-dimensional rGO nanosheets on aminated pattern generated by inkjet printing. Sensing characteristics of rGO-FET immunosensor showed the highly precise, reliable, and linear shift in the Dirac point with the analyte concentration of PSA-ACT complex and extremely low detection limit as low as 1 fg/ml. We further analyzed the charge doping mechanism, which is the change in the charge carrier in the rGO channel varying by the concentration of biomolecules. Amenability of solution-based scalable fabrication and extremely high performance may enable rGO-FET device as a versatile multiplexed diagnostic biosensor for disease biomarkers.

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