• 한국세라믹학회지
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• 제32권3호
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• pp.371-377
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• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• 공업화학
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• 제17권4호
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• pp.335-342
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• 2006

금속 알루미늄의 낮은 환원전위는 전기화학적 산화반응을 통하여 알루미늄과 그 표면에 존재하는 산화막의 구조 및 성질의 변화를 일으킨다. 산성용액에서 알루미늄을 전기화학적으로 에칭하여 표면적을 확대시키고 중성의 용액에서 알루미늄 표면에 치밀한 유전체 산화막을 형성시켜 커패시터의 전극으로 이용하고 있다. 저온의 산성용액에서는 양극산화시 나노크기의 다공층 산화막이 형성되며, 나노구조체의 템플레이트로 사용되고 있다. 이와같은 알루미늄의 전기화학적 특성은 알루미늄을 새로운 기능성을 가진 재료로 변화시킴으로서 다양한 분야에서 응용될 것으로 기대된다.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2005년도 춘계학술대회논문집
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• pp.57-60
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• 2005

This paper describes the experimental results of the pre-breakdown phenomena in $SF_6/CO_2$ mixtures under non-uniform electric fields caused by positive and negative lightning negative voltages. $SF_6/CO_2$ mixtures have an advantage of an environmental aspect and cost reduction, and safety aspects. In order to analyze the pre-breakdown processes in $SF_6/CO_2$ mixtures stressed by impulse voltages, pre-breakdown current and luminous signals were measured by a shunt and a photo-multiplier tube, respectively. Dielectric strengthes of $SF_6/CO_2$ mixtures were investigated. Additionally, characteristics of discharge channels were observed by high speed cameras and the physical properties were discussed. The pre-breakdown propagates with a stepwise process. The in to breakdown from the corona onset point in positive polarity was shorter than that in negative polarity. The time intervals of positive leaders are shorter than those of negative leaders, and the path of positive leader channel is zigzag.

• 한국컴퓨터산업학회논문지
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• 제4권4호
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• pp.579-588
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• 2003

지중전선로에 있어서 케이블을 연결하는 중간 접속재에 발생하는 전계 집중, 각종 불순물의 침투 및 케이블 절연층의 손상은 궁극적으로 열화 및 절연파괴를 야기하게 되어 케이블의 수명을 단축시키고 있다. 본 연구에서는 경계요소법을 이용하여 초고압 케이블 절연재료로 널리 사용되고 있는 가교폴리에틸렌과 접속재 키트의 절연층으로 사용되고 있는 EPDM의 전계분포를 시뮬레이션 하였다. 시료는 두께 1[mm]로 3장을 중첩한 것으로 모델링하여 컴퓨터 시뮬레이션을 하였다. 전계해석 결과 보이드 내부의 defect는 silicone oil에 의해 전계집중을 약화시킴을 확인하였고, XLPB보다 EPDM의 전계분포가 낮게 유지됨을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.285-288
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• 1997

Generally the high dielectric films, such as PZT(Pb(Z $r^{1-x}$ $Ti_{x}$ ) $O_3$) and BST(B $a_{l-x}$S $r_{x}$ Ti $O_3$) have been formed on the Pt thin films. However it is generally known that the dry etching of Pt is difficult because of its chemical stability. So, the dry etching of Pt remains at the preliminary work. Therefore, in this study, Pt etching mechanism was investigated with Ar/C $l_2$gas plasma by using XPS(X-ray photoelectron spectroscopy) and QMS(Quadrupole mass spectrometry). Ion current density was measured with Ar/C $l_2$gas plasma by using single Langmuir probe. XPS results shoved that the atomic % of Cl element on the etched Pt sample increased with increasing Ar/(Ar+C $l_2$). And QMS results showed that the increase of Ar partial pressure in the plasma resulted in the improvement of C $l_2$dissociation and Cl redical formation and simultaniously the increase of ion bombardment effects.s.s.

• 한국전기전자재료학회논문지
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• 제19권2호
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• pp.162-168
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• 2006

Recently, diagnosis techniques have been investigated to detect a Partial Discharge associated with a dielectric material defect in a high voltage electrical apparatus, However, the properties of detection technique of Partial Discharge aren't completely understood because the physical process of Partial Discharge. Therefore, this paper analyzes the process on surface discharge of polymer insulator using wavelet transform. Wavelet transform provides a direct quantitative measure of spectral content in the time~frequency domain. As it is important to develop a non-contact method for detecting the kaolin contamination degree, this research analyzes the electromagnetic waves emitted from Partial Discharge using wavelet transform. This result experimentally shows the process of Partial Discharge as a two-dimensional distribution in the time-frequency domain. Feature extraction parameter namely, maximum and average of wavelet coefficients values, wavelet coefficients value at the point of $95\%$ in a histogram and number of maximum wavelet coefficient have used electromagnetic wave signals as input signals in the preprocessing process of neural networks in order to identify kaolin contamination rates. As result, root sum square error was produced by the test with a learning of neural networks obtained 0.00828.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1301-1305
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• 2005

The performance of OTFT with $PVP-TiO_2$ composite, as a gate insulator, is reported, including the effect of surfactant for synthesizing the composite material. According to our investigation results, it was one of critical issues to prevent the aggregation of $PVP-TiO_2$ particles during the synthesis process. From this point of view, $PVP-TiO_2$ particles were treated using Tween80, as a surfactant, and we could reduce the aggregated $PVP-TiO_2$ clusters. As a result, the OTFT with the composite insulator showed the threshold voltage of about -8.3 V and the subthreshold slope of about 1.5 V/decade, which are the optimized properties compared to those of OTFTs with bare PVP, in this study. It is thought that these characteristic improvements are originated from the increase in the dielectric constant of the PVP-based insulator by compositing with high-k particles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.662-665
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• 2004

Recently, diagnosis techniques have been investigated to detect a partial discharge associated with a dielectric material defect in a high-voltage electrical apparatus However, the properties of detection technique of PD aren't completely understood because the physical process of PD. Therefore, this paper analyzes the process on Surface Discharge of Polymer Insulator using Wavelet transform. Wavelet transform provides a direct quantitative measure of spectral content in the time-frequency domain. As it is important to develop a non-contact method for detecting the Contamination Degree, this paper analyzes the electromagnetic waves emitted from PD using Wavelet transform. This paper experimentally shows the process of PD as a two-dimensional distribution in the time-frequency domain. This method is shown to be useful for detecting prediction of contamination degree.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.734-737
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• 2004

The metal-ferroelectric-semiconductor (MFS) structure is widely studied for nondestructive readout (NDRO) memory devices, but conventional MFS structure has a critical problem. It is difficult to obtain ferroelectric films like PZT on Si substrate without interdiffusion of impurities such as Pb, Ti and other elements. In order to solve these problems, the metal-ferroelectric-insulator-semiconductor (MFIS) structure has been proposed with a buffer layer of high dielectric constant such as MgO, $Y_2O_3$, and $CeO_2$. In this study, the etching characteristics (etch rate, selectivity) of MgO thin films were etched using $Cl_2/Ar$ plasma. The maximum etch rate of 85 nm/min for MgO thin films was obtained at $Cl_2$(30%)/Ar(70%) gas mixing ratio. Also, the etch rate was measured by varying the etching parameters such as ICP rf power, dc-bias voltage, and chamber pressure. Plasma diagnostics was performed by Langmuir probe (LP) and optical emission spectroscopy (OES).

• Investigative Magnetic Resonance Imaging
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• 제20권1호
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• pp.36-43
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• 2016

Visualization of the tissue loss tangent property can provide distinct contrast and offer new information related to tissue electrical properties. A method for non-invasive imaging of the electrical loss tangent of tissue using magnetic resonance imaging (MRI) was demonstrated, and the effect of loss tangent was observed through simulations assuming a hyperthermia procedure. For measurement of tissue loss tangent, radiofrequency field maps ($B_1{^+}$ complex map) were acquired using a double-angle actual flip angle imaging MRI sequence. The conductivity and permittivity were estimated from the complex valued $B_1{^+}$ map using Helmholtz equations. Phantom and ex-vivo experiments were then performed. Electromagnetic simulations of hyperthermia were carried out for observation of temperature elevation with respect to loss tangent. Non-invasive imaging of tissue loss tangent via complex valued $B_1{^+}$ mapping using MRI was successfully conducted. Simulation results indicated that loss tangent is a dominant factor in temperature elevation in the high frequency range during hyperthermia. Knowledge of the tissue loss tangent value can be a useful marker for thermotherapy applications.