• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2000년도 춘계학술발표대회 논문집
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• pp.131-134
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• 2000

Increased temperature adversely affects the reliability of a device. So, package material should have high thermal diffusion, i.e., high thermal conductivity. And, there are several other physical properties of polymeric materials that are important to microelectronics packaging, some of which are a low dielectric constant, a low coefficient of thermal expansion (CTE), and a high flexural strength. In this study, to get practical maximum packing fraction of AIN (granular type) filled EMC, the properties such as the spiral flow, thermal conductivity, CTE, and water resistance of AIN-filled EMC (65-vol%) were evaluated according to the size of AIN and the filler-size distribution. Also, physical properties of AIN filled EMC above 65-vol% were evaluated according to increasing AIN content at the point of maximum packing fraction (highly loading condition). The high loading conditions of EMC were set $D_L/D_S$=12 and $X_S$=0.25 like as filler of sphere shape and the AIN filled EMC in this conditions can be obtained satisfactory fluidity up to 70-vol%. As a result, the AIN filled EMC (70-vol%) at high loading condition showed improved thermal conductivity (about 6 W/m-K), dielectric constant (2.0~3.0), CTE(less than 14 ppm/$^{\circ}C$) and water resistance. So, the AIN filled EMC (70-vol%) at high loading condition meets the requirement fur advanced microelectronic packaging materials.

• Journal of Electrical Engineering and Technology
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• 제13권6호
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• pp.2412-2420
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• 2018

The thermal degradation of low density polyethylene (LDPE) will accelerate the production of carbonyl groups (C=O), which can act as the induced dipoles under high voltage. In this paper, we researched the dielectric properties and space charge behavior of LDPE after thermal aging, which can help us to understand the correlation between carbonyl groups (C=O) and electrical properties of LDPE. The spectra results show that LDPE exhibit obvious thermooxidative reactions when the aging time is 35 days and the productions mainly contain carboxylic acid, carboxylic eater and carboxylic anhydride, whose amount increase with the increasing of aging time. The dielectric properties show that the real permittivity of LDPE is inversely proportional to temperature before aging and subsequently become proportional to temperature after thermal aging. Furthermore, both the real and imaginary permittivity increase sharply with the increasing of aging time. The fitting results of imaginary permittivity show that DC conductivity become more sensitive about temperature after thermal aging. On this basis, the active energies of materials calculated from DC conductivity increase first and then decrease with the increasing of aging time. In addition, the space charge results show that the heterocharges accumulated near electrodes in LDPE change to the homocharges after thermal aging and the mean volume charge density increase with the increasing of aging time. It is considered that the overlaps caused by electrical potential area is the main reason for the increase of DC conductivity.

• 전기학회논문지
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• 제59권11호
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• pp.2021-2025
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• 2010

Electrical and structural properties were investigated on the effects of ZnO and the lead-free NKN-LST ceramics with the addition of ZnO were fabricated by a conventional mixed oxide method. A gradual change in the crystal and microstructure was observed with the increase of ZnO addition. For the NKN-LST-ZnO ceramics sintered at $1050^{\circ}C$, bulk density increased with the addition of ZnO and showed maximum value at addition 2.0mol% of ZnO. Curie temperature of the NKN-LST-ZnO ceramics slightly decreased with adding ZnO. The dielectric constant, piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) increased at the small amount of ZnO addition, which might be due to the increase in density. The high piezoelectric properties = 153 pC/N, electromechanical coupling factor = 0.484 and dielectric constant = 2883 were obtained for the NKN-LST+0.5ZnO ceramics sintered at $1050^{\circ}C$ for 2h.

• 전기학회논문지
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• 제60권4호
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• pp.801-804
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• 2011

Electrical properties and microstructure were investigated on the effects of $MnO_2$ and the lead-free $(Na_{0.44}K_{0.52}Li_{0.04})(Nb_{0.83}Sb_{0.07}Ta_{0.1})O_3$ ceramics with the addition of $MnO_2$ were fabricated by a conventional mixed oxide method. A gradual change in the crystal and microstructure was observed with the increase of $MnO_2$ addition. For the NKN-LST-xmol%$MnO_2$ sintered at $1100^{\circ}C$, bulk density increased with the addition of $MnO_2$ and showed maximum value at addition 1.0mol% of $MnO_2$. Curie temperature of the NKN-LST ceramics slightly decreased with adding $MnO_2$. The dielectric constant, piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) increased below 0.25mol% of $MnO_2$ addition, which might be due to the increase in density. The high piezoelectric properties = 145 pC/N, electromechanical coupling factor = 0.421 and dielectric constant = 2883 were obtained for the NKN-LST-0.25mol%$MnO_2$ sintered at $1100^{\circ}C$ for 4h.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.105-105
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• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 유기절연재료 방전 플라즈마연구회
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• pp.85-88
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• 2003

In this study, porcelain insulator samples which have a different alumina composition were manufactured in order to test electrical and mechanical properties and make an analysis of the propagation phenomena of micro cracks on porcelain body. From XRD quantitative analysis the crystalline phases were different with alumina composition, sample C and D which have about 17wt% Corundum phase without the Cristobalite phase shows better electrical and mechanical properties than sample A and 8 which have the Cristobalite phase. In dielectrics test on porcelain samples with below 17wt% alumina composition, it was found that the amount of glass phase$(SiO_2)$have an main effect to decrease the dielectric loss$(tan{\delta})$, and the dielectric breakdown voltage of aluminous porcelain insulators was largely affected by its relative density. As a micro cracks analysis, HRS were measured, then the intensity of HRS increased with the amount of alumina composition. On the other hand, the propagation behaviors of cracks was fairly influenced by the distribution of pores.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.879-882
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• 1992

In order to study electrical properties of epoxy composites with various additives rates and curing conditions, dielectric measurements have been performed over a frequency range from 30 [Hz] to 3 [MHz] and a temperature range of 20[$^{\circ}C$]$\sim$180[$^{\circ}C$] The observed higher values of dielectric permittivity and loss In the case of filled epoxy are attributed to MWS polarization effect. The low temperature peak assigned to the $\beta$-relaxation process is attributed to the enhenced rotation of the methyl group attached to the main chain and the presence of filler. And the high temperature peak ($\alpha$-relaxation process)is associated with the segmental motion or glass transition process.

• 전기학회논문지
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• 제56권1호
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• pp.117-122
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• 2007

LB method is one of the most interesting technique to arrange certain molecular groups at precise position relative to others. Also, the LB deposition technique can fabricate extremely thin organic films with a high degree of control over their thickness and molecular architecture. In this way, new thin film materials can be built up at the molecular level, and the relationship between these artificial structures and the properties of materials can be explored. In this paper, evaluation of physical properties was made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC. Lipid thin films were manufacture by detecting deposition for the accumulation and the current was measured after the electric bias was applied across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.263-266
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• 2001

In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.353-359
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• 2004

In this study. porcelain insulator samples which have a different alumina composition were manufactured in order to test electrical and mechanical properties and make an analysis of the propagation phenomena of micro cracks on porcelain body. From XRD quantitative analysis the crystalline phases were different with alumina composition, sample C and D which have about l7wt％ Corundum phase without the Cristobalite phase shows better electrical and mechanical properties than sample A and B which have the Cristobalite phase. In dielectrics test on porcelain samples with below l7wt％ alumina composition, it was found that the amount of glass phase(SiO$_2$) have an main effect to decrease the dielectric loss(tan$\delta$), and the dielectric breakdown voltage of aluminous porcelain insulators was largely affected by its relative density. As a micro tracks analysis, HRB were measured, then the intensity of HRB increased with the amount of alumina composition. On the other hand, the propagation behaviors of cracks was fairly influenced by the distribution of pores.