• Progress in Superconductivity
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• 제1권1호
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• pp.36-41
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• 1999

Methods for mode identification and accurate measurements of the unloaded Q ($Q_0$) of a dielectric-loaded $TE_{01{\delta}}$ mode cavity resonator with HTS endplates are proposed. A resonator with a sapphire rod and $YBa_2Cu_3O_{7-x}$(YBCO) endplates was prepared and its microwave properties were studied at temperatures above 30 K. The $TE_{01{\delta}}$ mode $Q_0$ of the resonator, designed to work as a tunable resonator with variations in the gap distance (s) between the sapphire rod and the top YBCO, was more than 1000000 at s = 0 mm and at 30 K with the resonant frequency of 19.56 GHz. The $TE_{01{\delta}}$ mode $Q_0$ decreases as s increases for s < 2 mm until mode couplings between the $TE_{01{\delta}}$ mode and other modes appeared at s = 2 mm. Significant dependence of the $TE_{01{\delta}}$ mode $Q_0$ on the input and output coupling constants was also observed. Applications of the open-ended $TE_{01{\delta}}$ mode cavity resonator for a tunable resonator with a very high Q as well as a characterization tool for the surface resistance measurements of HTS films are described.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.349-352
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• 1989

Poling piezoelectric ceramic-polymer composites with 0-3connectivity is difficult because of the high dielectric constant of most of the ferroelectric filler materials, and the high resistivity of the polymer matrix. To aid in poling this type of composite, conductivity of the polymer phase can be controlled by adding small amount of a semiconductor phase such as germanium, carbon or silicon. In this study, flexible piezoelectric composites of $PbTiO_3$ powder and Eccogel polymer were developed using small amounts of a semiconducting phase. These composites were poled rapidly at low voltages, resulting in properties superior to composites prepared without a conductive phase. The effect of addition of various conductive phase with different volume percentage on the dielectric and piezoelectric properties of the composite are discussed here.

• 대한전자공학회논문지
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• 제24권4호
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• pp.646-651
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• 1987

The photoconductive multilayer composed of glassy, porous, and fine-grained layers was fabdricated with Se and Sb2S3 by vacuum evaporation in order to be used as vidicon target. And its electrical, optical properties were investigatee. The fabrication conditions were as follow: the glassy layer was first deposited to have the thickness of 6500 \ulcornerat the deposition rate of 250\ulcornersec. High photosensitivity(\ulcorner=1) was obtained but its shortcoming was high dielectric constant. Therefore, the porous layer was added to lower dielectric constant and had 7500\ulcornerthick in the argon gas ambikent of 7x10-\ulcorner And the fine-grained layer was formed to prevent secondary electron emission and obtain good resolution. Its thickness was about 1700\ulcorner For the given vidicon target, the light transfer characteristic, that is, photosensitivity (\ulcorner) was measured to be 0.8 at the applied voltage of 25V. The spectral sensitivity was quite similar to that of the human eyes.

• 한국안전학회지
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• 제15권4호
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• pp.41-46
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• 2000

Silicone rubbers are elastomeric materials and organic copolymers, of which backbone is siloxane with high bonding strength. Silicone rubbers have been used as an power insulator because they are well weather proof, ozone proof and have excellent electric characteristics, thermal stability, cold resistance and low surface energy. Especially, it is known that they have very excellent characteristics at 200[$^{\circ}C$]. For this study, we made silicone rubbers as specimens and measured volume resistivity due to applied voltage and a variation of temperature 25[$^{\circ}C$] to 180[$^{\circ}C$]. Also we measured dielectric loss tangent due to applied voltage at temperature range 25[$^{\circ}C$] to 180[$^{\circ}C$] and frequency range 20[Hz] to 1${\times}10^6$[Hz].

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

• 한국진공학회지
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• 제1권1호
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• pp.190-197
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• 1992

In this study we have investigated physical and electrical properties of high temperature oxide (HTO) thin film using dichlorosilane (DCS) gas. This film had low etch rate and excellent step coverage, and its characteristics of Si-O bond were similar to those of thermal oxide. I-V curves also showed similar electrical properties to those of thermally grown oxide (SiO2) while time dependent dielectric breakdown (TDDB) results revealed 1/4 value of thermal oxide. However, defect density was measured to be much lower value than that of thermal oxide.

• 한국응용과학기술학회지
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• 제23권3호
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• pp.238-242
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• 2006

Polyimide is a well-known organic dielectric material, which has not only high chemical and thermal stability but also good electrical insulating and mechanical properties. In this research, the electric conduction mechanism of PI Ultra-Thin Films was investigated at room temperature. At low electric field, ohmic conduction $(I{\propto}V)$ was observed and the calculated electrical conductivity was about $4.23{\times}10^{-15}{\sim}9.81{\times}10^{-15}\;S/cm$. At high electric field, nonohmic conduction $(I{\propto}V^2)$ was observed and the conduction mechanism was explained by space charge limited region effect. The dielectric constant of PI Ultra-Thin Films was about 7.0.

• 한국세라믹학회지
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• 제40권4호
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• pp.360-364
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• 2003

Effects of sintering time upon the structures and microwave dielectric characteristics of co-substituted $Ba_{6-3x}$/S $m_{8+}$2x/ $Ti_{18}$ $O_{54}$ ceramics (x=2/3) were investigated. Prolonged sintering had significant effects upon the qf value and temperature coefficient, and a high Qf value (10,600 GHz) was obtained in the present ceramics combined with high-$\varepsilon$ (80) and near-zero temperature coefficient.t..

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.303-306
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• 1998

Electroluminescence is occurred when phosphor is located in electric field. Object of this research show powder electroluminescent device (PELD) for high brightness compared with conventional PELD. Single layer of PELD structured as follow (ITO/phosphor + dielectric/silver paste). To investigate optical properties of PELDS, EL spectrum, CIE coordinate system, Brightness of PELDs was measured. The suitable ratio between phosphor and dielectric in single layer of PELD was 7:3(phosphor: dielectric). At 200 V4OO Hz, high performance of PELD which had ratio of 7:3

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.1046-1049
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• 1998

PLT(28) ($Pb_{0.72}La_{0.28}Ti_{0.93}O_3$) dielectric thin films have been deposited on Pt/Ti/$SiO_2$/Si substrates in situ by a laser ablation. We have systematically changed the laser fluence from $0.5\;J/cm^2$ to $3\;J/cm^2$, and deposition temperature from $450^{\circ}C$ to $700^{\circ}C$. The surface morphology was changed from planar grain structure to columnar structure as the nucleation energy was increased. The PLT thin film with columnar structure showed good dielectric properties. It is shown that the deposition temperature strongly affect the film nucleation compared with the laser fluence.