• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.6
• /
• pp.484-488
• /
• 2009

In this study, in order to develop the lead-free piezoelectric ceramics with high piezoelectric and dielectric properties, $[(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}(Nb_{0.96}Sb_{0.04})]O_3$ ceramics were fabricated using $Ag_2O$ as sintering aid and a conventional mixed oxide process and their piezoelectric and dielectric characteristics were investigated according to the $SrTiO_3$ substitution. $SrTiO_3$ substitution enhanced density, dielectric constant(${\varepsilon}_r$) and electromechanical coupling factor($k_p$). However, mechanical quality factor was deteriorated. And also, Curie temperature ($T_c$), and phase transition temperature($T_p$) were rapidly decreased. At the 0.5 mol% $SrTiO_3$ substitution, density, electromechanical coupling factor($k_p$), dielectric constant(${\varepsilon}_r$) and piezoelectric constant($d_{33}$) of specimen showed the optimum value of $4.437\;g/cm^3$, 0.457, 1294, 265 pC/N, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.6
• /
• pp.495-500
• /
• 2009

The ceramic($BaTiO_3$)-polymer(epoxy) composites have been widely investigated as dielectric materials for embedded capacitors in printed circuit boards (PCBs). The dielectric properties of $BaTiO_3$/epoxy composites prepared using the agglomerated $BaTiO_3$ particles were investigated in the present study. The dielectric constants of the composites prepared using the agglomerated $BaTiO_3$ particles were about 2 times higher than those of the composites with the dispersed $BaTiO_3$ particles. The insulation resistance of the composites prepared using the agglomerated $BaTiO_3$ particles were lower than those of the composites with dispersed $BaTiO_3$ particles. As a result, there is tradeoff between high dielectric constant and insulation resistance in the $BaTiO_3$/epoxy composites. So it is important to select proper agglomerated or dispersed $BaTiO_3$ particles in accordance with needs.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.5
• /
• pp.349-353
• /
• 1999

In this paper, to fabricate the AC power electroluminescent device (PELD) with high brightness, new structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material were BaTiO3 and ZnS:Cu respectively. Fabricated AC power EL devices were estimated by optical and electrical properties of EL spectrum, brightness, CIE coordinate system, transferred charge density and EL emission wave in time domain. With above results, we found that brightness of newly proposed AC powder EL power EL device was 2754 cd/m2 at 100V, 400 Hz and compared with conventional device structure.

• Korean Journal of Materials Research
• /
• v.22 no.7
• /
• pp.342-345
• /
• 2012

The dielectric properties and phase transformation of poled <001>-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$(PMN-x%PT) single crystals with compositions of x = 20, 30, and 35 mole% are investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric-field-induced monoclinic phase was observed for the initial poled PMN-30PT and PMN-35PT samples by means of high-resolution synchrotron x-ray diffraction. The monoclinic phase appears from $-25^{\circ}C$ to $100^{\circ}C$ and from $-25^{\circ}C$ to $80^{\circ}C$ for the PMN-30PT and PMN-35PT samples, respectively. The dielectric constant (${\varepsilon}$)-temperature (T) characteristics above the Curie temperature were found to be described by the equation$(1/{\varepsilon}-1/{\varepsilon}_m)^{1/n}=(T-T_m)/C$, where ${\varepsilon}_m$ is the maximum dielectric constant and $T_m$ is the temperature giving ${\varepsilon}_m$, and n and C are constants that change with the composition. The value of n was found to be 1.82 and 1.38 for 20PT and 35PT, respectively. The results of mesh scans and the temperature-dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase and a to paraelectric cubic phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that measured in the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.347-349
• /
• 1999

We have fabricated insulating thin films using p-hexadecoxyphenol(p-Hp) that was formed phenol-formaldehyde resin of crosslinked structure from reaction with formaldehyde by LB technique. For fabricated MIM device, the possibility for insulating layers of electronic were investigated by electrical properties of their LB films according to crosslinking of LB films current-voltage (I-V) properties and frequency-capacitance (C-F) characteristics. We have provided evidence for the high insulating performance of phenol-formaldehyde thin films by the LB method. Conductivity of their LB films was as follows: pure water > 1 % aq. Formaldehyde > heat treatment, in the current-voltage (I-V) characteristics. It is demonstrated that insulation properties of crosslinked p-HP LB films were improved. In capacitance-frequency properties, the heat-treated p-HP LB films for crosslinking showed a low relative dielectric constant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.290-294
• /
• 2001

In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.

• Journal of Information Display
• /
• v.11 no.2
• /
• pp.52-56
• /
• 2010

High-efficiency organic light-emitting diodes (OLEDs) based on multilayer transparent electrodes (MTEs) are reported. The dielectric/metal/dielectric (DMD) multilayer electrode based on a thin silver layer achieved high sheet conductance as small as $6{\Omega}/sp$ and a tuning capability in the optical and electrical properties by engineering the inner and outer dielectric layers. In the conventional normal bottom-emitting structure, a DMD-based OLED can be fabricated with 90% higher forward luminous efficiency and 30% higher external quantum efficiency (EQE) compared to ITO-based devices. Special attention was paid to the optimization method of such MTE structure considering both the injection and optical structures.

• Proceedings of the KIEE Conference
• /
• 2011.07a
• /
• pp.1562-1563
• /
• 2011

Partial discharge measurement is one of the effective diagnostic techniques to predict abnormal high voltage dielectric insulation conditions of the electric equipments. Recently partial discharge diagnostic techniques were also utilized to evaluate the cryogenic dielectric insulation of high temperature superconducting electric equipment in liquid nitrogen. Generally, liquid nitrogen at 77 K is used used as the cryogenic and dielectric media for many high temperature superconducting high voltage applications. When a quench in the superconductor occurs, bubbles are generated which can affect the dielectric properties of the liquid nitrogen. So in order to reduce the bubble formation, subcooled nitrogen was also employed for this purpose. In this work, investigation of partial discharge characteristics of subcooled liquid nitrogen were conducted in order to clarify the retardation of partial discharge initiation voltage according to the different subcooling temperature of liquid nitrogen. And also the relation of partial discharge phenomena and the activities of bubbles were analyzed. It was observed that PD inception voltages shows rather different characteristics according to the decrease of subcooling temperature and the activities of bubbles were strongly influenced by temperature of the subcooled liquid nitrogen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.328-328
• /
• 2008

As a low K material for high frequency high integration modules, glass/ceramic composites were investigated. Glass composition were selected from $SiO_2-B_2O_3-Al_2O_3-R_2O$-RO system which having very low dielectric constant and cordierite was used as a ceramic filler. These composites were sintered at temperature range from $850^{\circ}$ to $950^{\circ}$ and XRD, SEM microstructure analysis of sintered bodies were performed for understanding sintering behavior. Any crystallization was not occurred and dense sintered bodies were attained. Dielectric and mechanical properties of these sintered glass/cordierite composites were analysed by network analyzer and UTM. Glass/ceramic composite with 50 wt% cordierite showing a dielectric constant (${\varepsilon}_r$) of 5.4, Q${\times}f_0$ (Q) of 1600 at 1 GHz and maximum bending strength of 163 MPa was attained.

• Journal of the Korean Ceramic Society
• /
• v.32 no.7
• /
• pp.761-768
• /
• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.