• Journal of Electrical Engineering and Technology
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• v.1 no.1
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• pp.120-126
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• 2006

Ferroelectric materials have been widely investigated for high density dynamic random access memories, opto-electrics, and tunable microwave devices due to their properties. In this study, we have investigated the dielectric properties of Ti doped $K(Ta,\;Nb)O_3$ thin films. By doping Ti Into the $K(Ta,Nb)O_3$ system, Ti with a valence value of +4 will substitute Ta or Nb ions with a valence value of +5. This substitution will introduce an acceptor state. Therefore, this introduced acceptor state will reduce dielectric loss by trapping electrons. Using 3% Ti-doped $K(Ta,Nb)O_3\;targets,\;K(Ta,Nb)O_3$:Ti films were grown in MgO(001) crystals using pulsed laser deposition. First, growth conditions were optimized. A reduction in the loss tangent was observed for Ti-doped $K(Ta,Nb)O_3$ relative to undoped films, although a reduction in tunability is also seen. The crystallinity, morphology, and tunability of $K(Ta,Nb)O_3$:Ti films are reported.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.8-12
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• 1994

Solid solutions $Sr_2$($Ta_{1-x}$$Nb_{x}$)$_2$$O_{7}$ (x = 0.0 - 1.0) composed of strontium-tantalate (low Curie temperature) and strontium-niobate (high Curie temperature) were prepared by the conventional mixed oxide method and the molten salt synthesis method (flux method). Phase relation, sintering temperature, grain-orientation and dielectric properties were investigated for sintered ceramic samples with different compositions. Both Curie temperature and dielectric constant at Curie temperature were increased, and sintering behavior and the degree of grain-orientation were improved with the increase of Nb content. Single phase $Sr_2$$Nb_2$$O_{7}$ powder was synthesized by using flux method at lower temperatures, and sintering temperature was also reduced by using flux method derived powder than using mixed-oxide derived powder. Sintering characteristics and dielectric properties of specimens prepared by flux method were better than those derived through the conventional method.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.158-164
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• 1995

Solid solutions Sr$_{2}$(Ta$_{1-x}$ Nb$_{x}$)$_{2}$O$_{7}$, (x=0.0-1.0), composed of strontium tantalate(Tc=-107.deg. C) and strontium-niobate(Tc=1342.deg. C) were prepared by the conventional mixed oxide method and the flux method(molten salt synthesis method). Phase relation, sintering temperature, grain-orientation and dielectric properties for sintered ceramic samples were investigated with different compositions. Both Curie temperature and dielectric constant at Curie temperature were increased, and sintering behavior and the degree of grain-orientation were improved with the increase of Nb content. The single phase Sr$_{2}$(Ta/sib 1-x/Nb$_{x}$)$_{2}$O$_{7}$ powder was synthesized by using the flux method at lower temperatures, and sintering temperature was also reduced by using the flux method-derived powder than using the mixed oxide-derived powder. Sintering characteristics and dielectric properties of the specimens prepared by the flux method were better than those derived through the conventional mixed oxide method.thod.hod.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.282-286
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• 2003

We investigated the effects of calcination temperature and sintering additives on the sintering behaviors and microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$. Highly densified samples were obtained at the sintering temperatures below $1000^{\circ}C$ with additions of 0.45 wt.% $Bi_2O_3$ and 0.55 wt.% $V_2O_5$. From the examination of the existing phases and microstructures before and after sintering of $(Zn_{0.8}Mg_{0.2})TiO_3$ system calcined at the various temperatures ranging from $800^{\circ}C$ to $1000^{\circ}C$, it was found that high $Q{\times}f_o$ values were obtained when unreacted or second phases in calcined body were reduced. When calcined at $1000^{\circ}C$ and sintered at $900^{\circ}C$, it consists of hexagonal as a main phase with uniform microstructure and exhibits $Q{\times}f_o$ value of 42,000 GHz and dielectric constant of 22.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.100-100
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• 2000

Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied

• Korean Journal of Agricultural Science
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• v.48 no.4
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• pp.739-751
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• 2021

The thawing process is usually essential for imported pork because this product is typically distributed frozen. Consumers prefer fresh pork because discoloration, nutrient spills, and microbial contamination are high during the thawing process. The illegal act of selling frozen pork by disguising it as fresh pork through various methods can occur for the benefit of the difference in the sales price. However, there is some difficulty in securing systematic and objective data, as sensory tests are generally performed on imported pork. In the experiment conducted here, the electrical conductivity and dielectric properties of pork neck and pork belly products were measured. The amounts of change before and after freezing were compared through a statistical analysis, and a new method for determining frozen meat was proposed based on the analysis results. The weight was reduced compared to that before freezing due to the outflow of drips from the thawing process, but there was no difference in the drip loss level due to the thawing method. Vacuum packaging was found to lead to more drip loss than regular packaging, but the difference was not statistically significant. Frozen pork neck meat can be determined by measuring the electrical conductivity in the lean parts and the dielectric characteristic in the fatty parts. Frozen pork belly is determined by measuring the dielectric constant of the part closest to the outer fat layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.898-901
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• 2006

To fabricate mono layer green sheet (MLGS) of transparent dielectric for PDP front panel, dispersion of transparent dielectric slurry and various properties of green sheets were examined as a function of amount and kinds of organic additives. Sedimentation height and viscosity of slurry were measured to determine proper types and amount of dispersant in non-aqueous system transparent dielectric slurry. Many MLGS having various ratios of the transparent dielectric glass frit, binder and plasticizer were fabricated. Finally we got the transparent dielectric layer of high transparency and free from residual pore might be remained in the gap between the electrodes.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1561-1565
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• 2018

The dielectric properties of the uniaxial relaxor ferroelectric $Sr_xBa_{1-x}Nb_2O_6$ with x = 0.75 were investigated along the polar [001] direction as a function of temperature. The capacitance maximum showed the frequency dispersion commonly observed in relaxors. Additional weak dielectric anomalies were observed in the paraelectric phase; they were only seen during the heating process and disappeared upon subsequent cooling. These were attributed to the existence of large polar clusters strongly pinned at defects and/or to random fields and their metastable characters. Aligning the ferroelectric domains along the polar axis at room temperature removed the high-temperature dielectric anomalies. The dependences of the capacitance and the dielectric maximum temperature on the magnitude of the poling field were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.48-48
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• 2010

In this paper, we have investigated temperature dependence of dielectric breakdown voltage at epoxy with added nano-filler(MgO), which is used as a filler of epoxy additives for HVDC(high voltage direct current) submarine cable insulating material with high thermal conductivity and restraining tree to improve electrical properties of epoxy resin in high temperature region. In order to find dispersion of the specimen, the cross sectional area of nano-composite material is observed by using the SEM(Scanning Electron Microscope) and it is conformed that each specimen is evenly distributed without the cohesion. As a result, it is confirmed that the strength of breakdown of all specimen at 50 [$^{\circ}C$] decreased more than that of the dielectric breakdown strength at room temperature. When temperature increases from 50 [$^{\circ}C$] to 100 [$^{\circ}C$], we have confirmed that breakdown strength of virgin specimen decreases, but specimens with added MgO show constant dielectric breakdown strength.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.67.1-67.1
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• 2012

Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.