• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2166-2172
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• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.625-629
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• 1999

In this study, in order to develop high sensitivity and low noise acoustic emission sensor, we manufactured the Pb(Zr, Ti)O$_3$ ceramics with the addition of WO$_3$ wt% to search for its required characteristics. Dielectric constant was increased as a function of the increase of WO$_3$ wt%. The Pb(Zr, Ti)O$_3$ (EC-65) ceramics added with 0.1lwt% WO$_3$ showed excellent dielectric constant and piezoelectric constants of 1931 and 199.55$\times$10$^{-12}$ (C/N), respectively. Accordingly It was shown as the composition ceramics suitable for AE sensor.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.756-762
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• 1997

In this paper the change of electrical properties of transformer oil due to electron beam irradiation is investigated. The specimens are produced with a some different dose of 0.5[Mrad], 1[Mrad] and 2[Mard] except for original specimen. The physical properties of each specimen is analyzed by using the FT-IR spectrum. So it is confirmed that carbonyl groups are increased according to the increase of electron beam dose and also that the nitric compounds are disappeared. The magnitude of dielectric dissipation factor appears maximum value by the contribution of dipoles and ions in the low temperature low voltage region and it is stable due to the saturation of carriers in the high temperature high voltage region in the electric conduction characteristics. Volume resistivity is also measured one of original specimen is larger than irradiated specimen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.203-206
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• 1998

In this paper, specimens stirred with the several kinds of benzotriazole(following as BTA) addition which is very effective to decrease the streaming electrification, are tested to investigate the change of properties for insulating fluid using in ultra-high voltage transformer, and it will give a guideline to find out a proper quantity of BTA addition for the most effective suppression against the streaming electrification. In GC, we could not find out the change of the physical properties in an insulating fluid by BTA. In a flowing transformer oil, the characteristics on dielectric of specimen contained BTA 10[ppm] are superior to the others.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.480-483
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• 2000

Polyimide is a well-known organic dielectric material, which has not only high chemical and thermal stability but also good electrical insulating and mechanical properties. In this research, the electrical properties of PI LB films were investigated at room temperature. At low electric field, ohmic conduction(I∝V) was observed and the calculated electrical conductivity was about 9.7$\times$10$^{-15}$ S/cm. At high electric field, conduction(I∝V$^2$) was observed and the conduction mechanism was explained by space charge limited region effect. The dielectric constant of LB film was about 7.5.

• Journal of Powder Materials
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• v.17 no.4
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• pp.289-294
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• 2010

For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.

• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.953-957
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• 2001

To study various relaxation phenomena of $Pb(Mg_{1/3}Nb_{2/3})O_3$ relaxor ferroelectrics, weak electric-field properties as well as strong electric-field properties were investigated in the frequency range from 1 Hz to 100 kHz. The temperature dependence of the dielectric properties were measured under the low electric-field of 1 V/mm in the phase transition temperature range from $-40^{\circ}C$ to $90^{\circ}C$. The dielectric properties obtained from the slope of the dielectric hysteresis loop and the temperature dependence of the pyroelectric properties were also investigated. When fitting all the experimental data with the Vogel-Fulcher relation, experimental data were agreed with the equation closely. Thus, dielectric relaxations could be modeled by the Vogel-Fulcher relation not only for the low electric-field but also for the high electric-field.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.350-353
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• 2003

Millimeter-wave dielectric ceramics have been used like applications for ultrahigh speed wireless LAN because it reduces the resources of electromagnetic wave, and Intelligent Transport System (ITS) because of straight propagation wave. For millimeterwave, the dielectric ceramics with high quality factor (Q$.$f), low dielectric constant($\varepsilon$), and nearly zero temperature coefficient of resonant frequency ($\tau$) are needed. No microwave dielectric ceramics with these three properties exist except Ba(Mg$\_$1/3/Ta/sub1/3/)O$_3$ (BMT), which has a little high s: In this paper, alumina (Al$_2$O$_3$) and fosterite (Mg$_2$SiO$_4$), candidates for millimeter-wave applications, were studied with an objective to get high q$.$f and nearly zero $\tau$$\_$f/ For alumina ceramics, q$.$f more than 680,000 GHz was obtained but it was difficult to obtain nearly zero Qf. On the other hand, for forsterite ceramics, q$.$f was achieved from 10,000 GHz of commercial for sterite to 240,000 GHz of highly purified MgO and SiO$_2$ raw materials, and $\tau$$\_$f/ was reduced a few by adding TiO$_2$ with high positive $\tau$$\_$f/.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.124-127
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• 2001

In this study, the electrical properties of polymer thin film layered by spin-coating method was investigated, and this polymer is one of the polymer applied to insulation layer for display, this polymer has relatively high dielectric constant, hygroscopic property and easy to make thin film by spin-coating. That is, in this study use the polymer that is cyano acrylate terpolymer, and the MIM(Metal/Insulator/Metal) structures were fabricated to measure the electrical properties such as Voltage-Current characteristics and dielectric characteristics. Also the conductivity and dielectric constant has been calculated. As a result, the conductivity in room temperature was $0.85{\times}10^{-14}{\sim}1.35{\times}10^{-14}$[S/cm]. The fact that this polymer be acted as insulator can be supported by this result. The dielectric constant was calculated as $10.39{\sim}12.05$ higher than Dopont Inc., this make it possible to accumulate more charges in insulation layer under same condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.309-310
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• 2006

We studied dielectric properties of OLEDs(Organic Light-emitting Diodes) depending on applied voltage (AC) of PTFE(Polytetrafluoroethylene), material of hole injection layer in structure of ITO/hole injection layer (PTFE)/emitting layer, Alq3(Tris(8-hydroxyquinolibe) Alumin)/Al. PTFE is deposited 2 [nm] as rate of 0.2~03 [${\AA}/s$] and $Alq_3$ is deposited 100 [nm] as rate of 1.3~1.5 [${\AA}/s$] m high vacuum ($5{\times}10^{-6}$[torr]). In result of these studies, we can know dielectric properties of OLEDs. Impedance is decreased depending on applied voltage variation, dielectric loss showed peak in specified voltage and showed cole-cole plot of a specimen.