• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.123-130
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• 1997

In this study, (Sr.Pb.Ca)TiO3-Bi2O3.3TiO2(SPCT) systems were investigated to develop a new material which has a high dielectric constant, a low dielectric loss and a small TCC(Temperature Coefficient of Capa-citance), and are suitable for high voltage applications as a function of the additions of Bi2O3.3TiO2 from 5 mol.% to 9 mol.%. The result obtained from our investigation showed that up to 6 mol.% Bi2O3.3TiO ad-dition the dielectric constant increased and it deteriorated at higher concentrations with increasing amount of the acicular grains. As a result of some dopants (SiO2, Nb2O3, MnO2) addition to SPCT, the specimens with MnO2 showed good dielectric properties. The dielectric constant decreased, but the TCC was improved with the addition of MnO2 from 0.15 wt.% to 0.45 wt. %.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.181-182
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• 2000

The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5-ZnO-BaO$ and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP(Plasma Display Panel) were investigated. As a transparent dielectric materials for front panel, $PbO-SiO_2-B_2O_3$ glass showed good dielectric properties, high transparency and proper thermal expansion matching to soda-lime glass substrate. And the reflective dielectric materials for back panel were prepared from parent glass of $SiO_2-ZnO-B_2O_3$ system and oxide filler. It was found that these glass-ceramics are useful materials for reflective dielectric layers, as those have a similar thermal expansion to soda-lime glass plate, high reflectance, low sintering temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.421-424
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• 1996

Effects of humidity absorbing deterioration on AC dielectric breakdown characteristics of modified epoxy resin system with SN(succinonitrile) were investigated. As the forced humidity absorbing deterioration proceeded under high temperature and humidify, glass transition temperature increased. The dielectric breakdown strength increased and then decreased at deterioration cycles higher than 2. Not only, the increment of thermal stability but also, the physical detects such as Internal cracks and voids occurred during the humidity absorbing deterioration cycle were the main causes of the change in dielectric properties.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.55-61
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• 2006

The microwave dielectric properties and low temperature sintering of $Ca[Ti_{1-x}(Ni_{1/3}Nb_{2/3})_x]O_3$ system were investigated at the sintering temperature $1,200\~1,350^{\circ}C$. The density and quality factors $(Q{\times}f)$ increased while dielectric constants slightly decreased with the decrease of Ti. The dielectric constant, quality factor, and temperature coefficient of resonance frequency $(\tau_f)$ were 64, 17,000 GHz, and $-9.1\;ppm/^{\circ}C$ respectively, when $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ ceramics were sintered at $1,300^{\circ}C$ for 4 h. $2Li_2O-B_2O_3$ was added to $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ to decrease the sintering temperature for LTCC application. The microwave dielectric properties of the samples sintered at $925^{\circ}C$ for 2 h with the addition of $6\;wt\%\;2Li_2O-B_2O_3$ were $\varepsilon_r=48.7,\;Q{\times}f=8,460\;GHz$, and $\tau_f=+5.6ppm/^{\circ}C$. Compatibility test of the composition with silver electrode shows no reaction with silver electrode, implying the feasibility as a high-K LTCC material.

• Polymer(Korea)
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• v.30 no.6
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• pp.492-497
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• 2006

The epoxy composites are prepared with mixing temperature of epoxy/montmorillonite (MMT) melt master batch and the dielectric properties of the composites are also compared with intercalation of MMT. The exfoliation mainly occurrs iii the low content of MMT composites, while in the composites with high content of MMT the interspacing distance increases as the mixing temperature of epoxy/MMT master batch is increased. Class transition temperature of the composite which the MMT are effectively exfoliated is increased with the appropriate postcuring condition. Since the orientation polarization of dipoles in the epoxy molecules is restricted by the clay nanolayers exfoliated, the dielectric constant and dielectric loss of the composites are reduced. Furthermore, the dielectric properties could be improved by controling the mixing temperature and time of epoxy/MMT master batch as well as postcuring condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.195-201
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• 2003

The (Ba,Bi,Sr)TiO$_3$[BBST] thin films were fabricated on Pt/Ti/SiO$_2$ /Si substrate by RF sputtering method. The effects of Ar/O$_2$ ratio on the structural and dielectric properties of BBST thin films were investigated. Increasing the Ar/O$_2$ ratio, the intensity of BaBi$_4$Ti$_4$O$_{15}$ and Bi$_4$Ti$_3$O$_{12}$ peaks were increased but (Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ peak was decreased. In the BBST thin films deposited with condition of Ar/O$_2$(90/10) ratio, the composition ratio of the Ba, Bi and Sr atoms were 0.35, 0.25 and 0.4 respectively. The Bi and Ti atoms were diffused into the Pt layers. Increasing the Ar/O$_2$ ratio, the dielectric constant of the BBST thin films were increased but the dielectric loss of the BBST thin films were decreased. The dielectric constant and dielectric loss of the BBST deposited at 90/10 of Ar/O$_2$ ratio were 319 and 2.2%. respectively . Increasing the applied voltage, the capacitance of the BBST thin films were decreased.reased.

• Proceedings of the KIEE Conference
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• 2008.09a
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• pp.207-210
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• 2008

In this paper, we researched the dielectric properties and voltage dependence on slice XLPE sheet from 22[kV] and 154[kV] power cable. We studied effects for impurities and water for semiconductor shield through a dielectric properties experiment to estimate performance of insulating materials in power cable. Capacitance and $tan{\delta}$ of 22[kV], 154[kV] were 53/43[pF] and $7.4{\times}10^{-4}$, $2.1510^{-4}$. In these results, the trend was increased with the increase of temperature. The tan6 of XLPE/semiconductor layer was increased as compared with that of XLPE. Dielectric properties reliability of tan6 was small. Also, To improve mean-life and reliability of power cable in this study, we have investigated chemical properties showing by changing the content of carbon black that is semiconductive additives for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Chemical properties of specimens was measured by FT-ATR (Fourier Transform Attenuated Total Reflectance). The condition of specimens was a solid sheet. We could observe functional group (C=O, carbonyl group) of specimens through FT-ATR. From these experimental result, the concentration of functional group (C=O) was high according to increasing the content of carbon black. We could know EEA was excellent more than other specimens from above experimental results.

• Advances in materials Research
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• v.5 no.3
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• pp.181-192
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• 2016

In this work effect of high energy milling on the structural and electrical properties of $Ba(Fe_{1/2}Ta_{1/2})O_3$ (BFT) ceramic synthesized using standard solid-state reaction method were investigated. X-ray diffraction studies indicated that the unit cell structure for all the samples to be hexagonal (space group: P3m1). FTIR spectra also confirmed the formation of BFT without any new phase. The milled (10 h) BFT ceramic showed the formation of small grain sizes (<$2{\mu}m$) which is beneficial for dielectric applications in high density integrated devices. Besides, the milled (10 h) BFT ceramic sample exhibited superior dielectric properties (enhancement in ${\varepsilon}^{\prime}-value$ and reduction in $tg{\delta}-value$) compared to un-milled one. Impedance analysis indicated the negative temperature coefficient of resistance (NTCR) character. The correlated barrier hopping model (jump relaxation type) is found to successfully explain the mechanism of charge transport in present ceramic samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.77-80
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• 1998

Recently, extending the local broadcasting and increasing lots of informations. The low-loss communication cable is required in proportion as frequency .The reason of transportation loss causes to using the high frequencies like hundreds of MHz or decades of GHz. For the low transportation loss. It is required the developing-technology of foaming and the high foamed insulator with the dielectric ratio of the nearest to 1. Therefor, there is the purpose of developing the insulating materials for the low dielectric ratio. Also it is important to measure the attenuation, which is one of the important parameters.sa the evaluation of transportation characteristic with frequency in the communication cable. In this paper,the result showed that the dielectric ratio(1.4) of the nearest to 1 and low attenuation with high frequency were very related to the transportation and reflection characteristics such as propagation velocity (82.27%). Delay time and voltage standing wave ratio(VSWR).

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.64.1-64.1
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• 2012

Next generation displays such as high performance LCD, AMOLED, flexible display and transparent display require specific TFT back-planes. For high performance TFT back-planes, low temperature poly silicon (LTPS), and metal-oxide semiconductors are studied. Flexible TFT backplanes require low temperature processible organic semiconductors. Not only development of active semiconducting materials but also design and synthesis of semiconductor corresponding gate dielectric materials are important issues in those display back-planes. In this study, we investigate the high heat resistant polymeric gate dielectric materials for organic TFT and inorganic TFT with good insulating properties and processing chemical resistance. We also controlled and optimized surface energy and morphology of gate dielectric layers for direct printing process with solution processible organic and inorganic semiconductors.