• Journal of Electrical Engineering and Technology
• /
• v.10 no.4
• /
• pp.1700-1711
• /
• 2015

In the last decade it has been witnessed significant developments in the area of nano particles and nano scale fillers on electrical, thermal, and mechanical properties of polymeric materials such as resins, varnishes, enamel and bakelites. The electric and thermal properties were more important in the electrical equipments for both steady state and transient state conditions. This paper deals with the characterization of the electric and thermal properties of the pure varnish and zirconia (ZrO₂) filler mixed varnish. The electric properties such as dielectric loss (tan δ), dielectric constant (ε), dielectric strength and partial discharge voltage were analyzed and detailed for different samples. It was observed that zirconia nano filler mixed varnish has the superior dielectric and thermal properties when compared to those of standard varnish. It has shown that at power frequency the 1wt% nano composite sample has the higher permittivity value when compared to other samples. It has been examined that the 1wt% sample was having higher inception and extinction voltages when compared to other samples. It has been observed that 1wt% sample has higher dielectric strength when compared with other samples. There has been an improvement of thermal property by adding few weight percent of zirconia nano fillers. There was not much variation in glass transition among the nano mixed composites. The weight loss was improved at 1wt% of the zirconia nano fillers.

• Journal of the Korean Ceramic Society
• /
• v.55 no.3
• /
• pp.290-298
• /
• 2018

In order to investigate the effect of thickness on the dielectric and piezoelectric properties of (001) PMN-29PT single crystals, three different types of PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: high density crystal [99%], low density crystal [95%], and high density crystal doped with Mn [98.5%]. When their thickness decreased from 0.5 mm to 0.05 mm, their dielectric constant ($K_3{^T}$), piezoelectric constants ($d_{33}$ and $g_{33}$), and electromechanical coupling factor ($k_t$) decreased continuously. However, their dielectric loss (tan ${\delta}$) increased. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$), increased the coercive electric field ($E_C$), and prevented local depoling. Therefore, Mn-doped PMN-PT crystals show high stability as well as high performance, even in the form of very thin plates (< 0.2 mm), and thus are suitable for application to high frequency composites, medical ultrasound probes, non-destructive testing devices (NDT), and flexible devices.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.65 no.11
• /
• pp.1840-1847
• /
• 2016

The surface of nanosilica and microsilica was modified in order to develop a high voltage insulation material for outdoor application. The modified silicas were well dispersed in an aliphatic cyclic epoxy resin. Dielectric properties were studied for 8 kinds of specimens: 1 kind of neat epoxy, 3 kinds of epoxy/microsilica composites, and 4 kinds of epoxy/microsilica/nanosilica composites. Complex dielectric constants were measured in the range of 10-2~1.2 Hz at room temperature.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2000.04a
• /
• pp.87-96
• /
• 2000

The properties of polyimide for interlayer dielectric applications are investigated during plasma etching of aluminum on it. Chlorine-based plasma generally used for aluminum etching results in an increase in the (dielectric constant of polyimide, while $SF_6$ plasma exhibits a high polyimide etch rate and a reducing effect of the dielectric constant. The leakage current of polyimide is significantly suppressed after plasma exposure. An optimal combination of Al etch with $Cl_6$ plasma and polyimide etch with $SF_6$ plasma is expected to be a good tool for realizing multilevel metallization structures.

• Korean Journal of Materials Research
• /
• v.16 no.8
• /
• pp.466-472
• /
• 2006

The electrical, dielectric properties, and its stability of ZPCCL-based varistors were investigated for different sintering temperatures in the range of $1230{\sim}1300^{\circ}C$. As the sintering temperatures increased, the varistor voltage decreased in the range of $777.9{\sim}108$ V/mm, the nonlinear coefficient decreased in the range of $77.9{\sim}7.1$, and the leakage current increased in the range of $0.3{\sim}50.6\;{\mu}A$. The stability of electrical and dielectric characteristics was obtained from sintering temperature of $1260^{\circ}C$. the varistors sintered at $1260^{\circ}C$ marked the high electrical and dielectric stability, with $%{\Delta}{V_{1mA}=+1.9%,\;%{\Delta}{\alpha}=-10.6%,\;%{\Delta}I_L=+20%\;and\;%{\Delta}tan\;{\delta}=+9.9%$ for DC accelerated aging stress state of $0.95V_{1mA}/150^{\circ}C$/24 h.

• Journal of the Korean Ceramic Society
• /
• v.30 no.8
• /
• pp.671-677
• /
• 1993

Effects of PbTiO3 addition on dielectric properties and extent of PbO loss in Nd-doped Pb(Mg1/3Nb2/3)O3 system were investigated. As the proportion of dopping increased, the phase transition temperature shifted to low region, and the dielectric constant at room temperature decreased rapidly. But as the proportion of PbTiO3 increased, the phase transition temperature shifted to high retion, and the dielectric constant at room temperature increased. The substitution of Nd3+ for Pb2+ decreased the amount of PbO evaporation, therefore the sample sintered well in case of only 1 mole% adding excess PbO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.532-535
• /
• 1999

In power cable joints, the interfaces of two different dielectric materials are inevitable. In addition, the interfacial breakdown between two internal dielectric surfaces represents one of the major causes of failure for power cable joints. We chose epoxy/EPDM interface, one of the interface in cable joints, and investigate dielectric interfacial breakdown phenomenon. First, design specimen with Flux 2D. Second, find interface condition which has high dielectric strength. Third, investigate interfacial breakdown properties with variable temperature.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.3
• /
• pp.80-84
• /
• 2009

The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.5
• /
• pp.1469-1478
• /
• 2014

Use of acetonitrile in electrolytes promotes better operation of supercapacitors. Recent efforts show that electrolytes containing acetonitrile can also function in a wide range of operating temperatures. Therefore, this paper addresses the dielectric relaxation processes, structure and dynamic properties of the bulk acetonitrile at various temperatures. Systems of acetonitrile were modeled using canonical ensemble and simulated by employing Molecular Dynamics method. Results show that interactions among the molecules were correlated within a cut-off radius while parallel and anti-parallel arrangements are observed beyond this radius at relatively high and low temperatures respectively. Furthermore, effects of C-C-N and C-H bending modes were greatly appreciated on the power spectral density of time rate change of dipole-dipole correlations whereas frequency shifts were observed on all modes at the lowest temperature under consideration. Linear variations with temperature were depicted for reorientation times and self-diffusion coefficients. Shear viscosity was also computed with a good accuracy within a certain range of the temperature as well.

• Journal of the Korean Ceramic Society
• /
• v.32 no.10
• /
• pp.1111-1116
• /
• 1995

To use dielectric material of high power multilayer capacitor, the composition of the commercial CaTiO3 was changed to decrease the sintering temperature, and the physical and electrical properties were investigated. Series of experiments showed that CaTiO3 with sintering additives had the highest density, the highest shrinkage, the lowest dielectric constant, the lowest loss factor, and the lowest temperature coefficient of capacitance (TCC). These properties had the constant values at sintering temperature of above 120$0^{\circ}C$.