• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.67-69
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• 1988

In this study, after changing the curing condition of hardner(DDM) and filler($SiO_2$) contents dielectric and dynamic mechanical properties were studied according to the variation of temperature. As the result we obtained a correlative $\alpha$-peak at 125-150[$^{\circ}C$] from dielectric and mechanical properties. With increasing curing condition and filler contents both dielectric and internal friction loss were, decreased, peak temperature shifted to high temperature, but there was no variation on peak temperature with filler contents. As the above result we knew the correspondence between dielectric and mechanical characteristics.

• Transactions on Electrical and Electronic Materials
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• v.7 no.2
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• pp.67-71
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• 2006

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films fabricated on MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of those films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrate, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, dielectric loss and tunability of the BST thin films annealed at $700^{\circ}C$ deposited on the MgO(100)/Si substrate measured at 10 kHz were 515.9, 0.0082, and 54.3%, respectively.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.34 no.5
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• pp.49-55
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• 2002

A new method is proposed for the on-line measurement of the fiber orientation of sheet materials. The measurement of fiber orientation is very important in manufacturing paper sheets, non-woven fabrics, and glass sheets, because fiber orientation strongly affects product properties represented by, for example, dimensional stability of paper. A method developed in this research utilizes anisotropy of dielectric constants of sheet materials as a key characteristic to determine the fiber orientation. The new on-line sensor, consisting of 5 microwave dielectric resonators set in different directions, was designed to detect the fiber orientation while paper is running with high speed on a paper machine. This sensor can determine the direction and the degree of fiber orientation from the measured direction of the maximal dielectric constant and its variation, respectively. The fundamental performance of this system was examined by the static measurement of printing grade paper, which gave a satisfactory result. Then, the dynamic measurements were done at a speed of 1,000 m/min by using a high-speed test-coating machine.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1516-1519
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• 1996

In this paper, a study on the electrical properties of ternary compound ceramics $[(1-y-x)BaTiO_{3}-ySrTiO_{3}-xMgTiO_3]$ fabricated 7 samples with each mol[%] by using the mixed oxide method. In this case, the sintering temperature were at $1,250[^{\circ}C]$ for 2[hr]. Also made ceramic capacitors from 7 samples, temperature coefficient of the capacitance and the variation of relative dielectric constants and loss with fixed frequency (1KHZ) were studied. In some ceramic capacitors, has shown very good properties of the dielectric constants and loss. In case of BSM-11 ceramic capacitor, is sure to the commercial capacitor which shows steady properties.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.189-195
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• 2006

The microstructure, electrical and dielectric properties, and stability against DC accelerated aging stress of the varistors, which are composed of quaternary system $ZnO-Pr_6O_{11}CoO-Cr_2O_3-based$ ceramics, were investigated for different $La_2O_3$ contents. The increase of $La_2O_3$ content led to more densified ceramics, whereas abruptly decreased the nonlinear properties by incorporating beyond 1.0mol%. The highest nonlinearity was obtained from 0.5mol% $La_2O_3$, with the nonlinear coefficient of 81.6 and the leakage current of $0.1{\mu}A$. The varistors doped with 0.5mol% $La_2O_3$ exhibited high stability, in which the variation rates of breakdown voltage, nonlinear coefficient, leakage current, dielectric constant, and dissipation factor were -1.1%, -3.7%, +100%, +1.4%, and +8.2%, respectively, for stressing state of $0.95V_{1mA}/150^{\circ}C/24h$.

• Korean Journal of Materials Research
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• v.19 no.10
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• pp.550-554
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• 2009

Unreported dielectrics based on the binary system of MgO-SiO$_2$ were investigated as potential candidates for microwave dielectric applications, particularly those demanding a high fired density and high quality factors. Extensive dielectric compositions having different molar ratios of MgO to SiO$_2$, such as 2:1, 3:1, 4:1, and 5:1, were prepared by conventional solid state reactions between MgO and SiO$_2$. 1 mol% of V$_2$O$_5$ was added to aid sintering for improved densification. The dielectric compositions were found to consist of two distinguishable phases of Mg$_2$SiO$_4$ and MgO beyond the 2:1 compositional ratio, which determined the final physical and dielectric properties of the corresponding composite samples. The increase of the ratio of MgO to SiO$_2$ tended to improve fired density and quality factor (Q) without increasing grain size. As a promising composition, the 5MgO.SiO$_2$ sample sintered at 1400 $^{\circ}C$ exhibited a low dielectric constant of 7.9 and a high Q $\times$ f (frequency) value of $\sim$99,600 at 13.7 GHz.

• Korean Journal of Materials Research
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• v.29 no.3
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• pp.175-182
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• 2019

This study examines paraelectric $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN), which has no hysteresis and high dielectric strength, for energy density capacitor applications. To increase the breakdown dielectric strength of the BZN film further, poly(vinylidene fluoride) BZN-PVDF composite film is fabricated by aerosol deposition. The volume ratio of each composition is calculated using dielectric constant of each composition, and we find that it was 12:88 vol% (BZN:PVDF). To modulate the structure and dielectric properties of the ferroelectric polymer PVDF, the composite film is heat-treated at $200^{\circ}C$ for 5 and 30 minutes following quenching. The amount of ${\alpha}-phase$ in the PVDF increases with an increasing annealing time, which in turn decreases the dielectric constant and dielectric loss. The breakdown dielectric strength of the BZN film increases by mixing PVDF. However, the breakdown field decreases with an increasing annealing time. The BZN-PVDF composite film has the energy density of $4.9J/cm^3$, which is larger than that of the pure BZN film of $3.6J/cm^3$.

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.160-165
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• 2002

High-frequency dielectric and microwave absorbing properties have been investigated in ferroelectric materials (BaTiO$_3$(BT), (1-x)Pb$Mg_{\frac{1}{3}}Nb_{\frac{2}{3}}$)O$_3$-xPbTiO$_3$(PMN-PT), (1-x)Pb$Mg_{\frac{1}{3}}Nb_{\frac{2}{3}}$O$_3$-xPb(Zn_{\frac{1}{3}}Nb_{\frac{2}{3}}$)O$_3$(PMN-PZN) for the aim of thin microwave absorbers in the frequency range of mobile telecommunication. The specimenns are prepared by conventional ceramic processing and complex permittivity has been measured by transmission/reflection method. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave range and their domiant loss mechanism is considered to be domain wall relaxation. The microwave absorbance of BT 0.9PMN-0.1PT, and 0.8PMN-0.2PZN specimen (determined at 2) are found to be 99.5% (at a thickness of 4.5 mm), 50% (2.5 mm), and 30% (2.5 mm), respectively. It is suggested that PMN-PT or PMN-PZN ferroelectrics are good candidate materials for the spacer of λ/4 absorber. The use of ferroelectric materials is effective in reducing the thickness of absorber with their advantage of high dielectric constant.

• Transactions on Electrical and Electronic Materials
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• v.4 no.1
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• pp.15-20
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• 2003

NiCr alloys are prepared onto poly-Si/ $SiO_2$/Si substrates to replace Pt bottom electrode with a new one for integration of high dielectric constant materials. Alloys deposited at Ni and Cr power of 40 and 40 W showed optimum properties in the composition of N $i_{1.6}$C $r_{1.0}$. The grain size of films increases with increasing deposition temperature. The films deposited at 50$0^{\circ}C$ showed a severe agglomeration due to homogeneous nucleation. The NiCr alloys from the rms roughness and resistivity data showed a thermal stability independent of increasing annealing temperature. The 80 nm thick BST films deposited onto N $i_{1.6}$C $r_{1.0}$/poly-Si showed a dielectric constant of 280 and a dissipation factor of about 5 % at 100 kHz. The leakage current density of as-deposited BST films was about 5$\times$10$^{-7}$ A/$\textrm{cm}^2$ at an applied voltage of 1 V. The NiCr alloys are possible to replace Pt bottom electrode with new one to integrate f3r high dielectric constant materials.terials.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.190-196
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• 2014

Flexible $TiO_2$ films were deposited as dielectric materials for high-energy-density capacitors on polyethylene terephthalate (PET) substrates using a roll-to-roll sputtering method. Both the growth behavior and electrical properties of the flexible $TiO_2$ films were dependent on the sputtering pressure and $O_2$/Ar gas ratio during the sputtering process. All $TiO_2$ films had an amorphous structure regardless of the sputtering conditions due to the low substrate temperature. Microstructural characteristics such as the surface morphology and roughness of the films degraded with an increase in the sputtering pressure and $O_2$ gas concentration. The $TiO_2$ films deposited at a low pressure showed better electrical properties than those of films deposited at a high pressure. The $TiO_2$ films prepared at 10 mTorr exhibited a dielectric constant of approximately 90 at 1 kHz and a leakage current density of $5{\sim}6{\times}10^{-7}A/cm^2$ at 3 MV/cm.