• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2232-2237
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• 2007

Steam reforming and catalytic reforming of $CH_4$ conversion to produce synthesis gas require both high temperatures and high pressure. Non-thermal plasma is considered to be a promising technology for the hydrogen rich gas production from methane. In this study, three phase AC GlidArc plasma system was employed to investigate the effects of gas composition, gas flow rate, catalyst reactor temperature and applied electric power on the $CH_4$ and $H_2$ yield and the product distribution. The studied system consisted of three electrode and it connected AC generate power system different voltages. In this study, air was used for the partial oxidation of methane. The results showed that increasing gas flow rate, catalyst reactor temperature, or electric power enhanced $CH_4$ conversion and $H_2$ concentration. The reference conditions were found at a $O_2$/C molar ratio of 0.45, a feed flow rate of 4.9 ${\ell}$/min, and input power of 1kW for the maximum conversions of $CH_4$ with a high selectivity of $H_2$ and a low reactor energy density.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$increases in C1$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinity of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• 한국세라믹학회지
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• 제39권6호
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• pp.570-575
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• 2002

현재 전기 . 전자 기술의 추세는 소형화를 비롯하여 집적화, 저전력화, 저가격화의 장점을 가진 MEMS(Micro Electro Mechanical Systems) device의 개발에 주력하고 있으며, 이를 위해서는 고종횡비와 높은 식각 속도를 가진 HDP(High Density Plasma) etching 기술 개발이 필수적이라 할 수 있다. 이를 위하여 우리는 Inductively Coupled Plasma(ICP) 장비를 이용하여 각 공정 변수에 의한 실리콘 deep trench식각 반응을 연구하였다. 실험 공정 변수인 platen power, etch/passivation cycle time에서 etching 단계 시간에 따른 변화와 SF$_{6}$:C$_4$F$_{8}$ 가스유량을 변화시켜 연구하였으며 또한 이들의 profile, scallops, 식각 속도, 균일도, 선택비도 관찰하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$ increases in Cl$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystalliility of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$ only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• 한국진공학회지
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• 제16권6호
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• pp.489-495
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• 2007

KSTAR 토카막은 현재 주장치 조립을 완료하고 "최초 플라즈마" 발생과 시운전을 준비하고 있다. 이를 위해 설치되어 있는 연료주입계는 배기 덕트 반대 쪽 한 곳만 주입구로 사용하기 때문에 균일하고 신속한 입자공급이 어렵다. 시운전이 끝나고 기본운전 단계가 되면 단순한 플라즈마 생성이 아니라 일정한 고밀도 토카막플라즈마 상태를 일정시간 고르게 유지해야 하므로 공간적으로 균일한 입자공급과 플라즈마 밀도 변화에 따른 신속한 제어가 가능한 연료공급계로 개선되어야 한다. 이런 개선점을 찾는 작업의 일환으로 우선 D-형 진공용기 및 플라즈마 컬럼을 사각단면 토러스로 묘사하는 모델을 만들고 연료공급 위치와 플라즈마의 전리율 및 배기확률에 따라 공간적인 입자분포가 어떻게 바뀌는지 몬테카를로 계산을 통해 분석했다.

• Mycobiology
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• 제39권2호
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• pp.96-102
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• 2011

We investigated diet supplementation with shiitake mushroom fruiting bodies on biochemical and histological changes in hypercholesterolemic rats. Six-wk old female Sprague-Dawley albino rats were divided into three groups of 10 rats each. A diet containing 5% Lentinus edodes fruiting bodies given to hypercholesterolemic rats reduced plasma total cholesterol, triglyceride, low-density lipoprotein (LDL), total lipid, phospholipids, and the LDL/high-density lipoprotein ratio by 34.33, 53.21, 75.00, 34.66, 25.73, and 71.43%, respectively. Feeding mushroom also significantly reduced body weight in hypercholesterolemic rats. However, it had no detrimental effects on plasma albumin, total bilirubin, direct bilirubin, creatinine, blood urea nitrogen, uric acid, glucose, total protein, calcium, sodium, potassium, chloride, inorganic phosphate, magnesium, or enzyme profiles. Feeding mushroom increased total lipid and cholesterol excretion in feces. The plasma lipoprotein fraction, separated by agarose gel electrophoresis, indicated that L. edodes significantly reduced plasma ${\beta}$ and pre-${\beta}$-lipoprotein but increased ${\alpha}$-lipoprotein. A histological study of hepatic cells by conventional hematoxylin-eosin and oil red-O staining showed normal findings for mushroom-fed hypercholesterolemic rats. These results suggest that shiitake mushrooms could be recommended as a natural cholesterol lowering substance in the diet.

• Preventive Nutrition and Food Science
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• 제2권3호
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• pp.214-218
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• 1997

The purpose of this study was to investigate the potential hypolipidemic effect of job's tears diet with the controlled intake of fiber in streptozotocin induced diabetic rats. Forty eight rats were fed either control diet or experimental diets (Raw, milled job's tears(RMJ); Raw, whole grain job's tears(RWJ);Steamed, milled job's tears(SMJ);Roasted, milled job's tears(OMJ)) for 3 weeks. The levels of total cholesterol (TC), low density lipoprotein cholesterol (LDL-C), high density lipoprotein cholesterol (HDL-C), free fatty acid(FFA) and triglyceride (TG) in plasma, liver and skeletal muscle were compared. Compared to diabetic control group, the level of plasma TC was lower in OMJ an SMJ fed rats, and was not different from that in RMJ and RWJ fed rats. The level of LDL-C was significantly lower in RMJ, OMJ and SMJ fed rats. For plasma HDL-C levels, no difference was observed among all group. Plasma FFA level significantly lower in RMJ, SMJ and RWJ fed rats, Plasma TG a levels of all job's ears fed groups were 50∼70% lower and liver TG levels of all job's tears fed groups were 70∼80% lower than those fo diabetic control group. For muscle TG, no differences were seen among all groups. These results suggest that steamed job's tears and roasted job's tears could have the potentaila on improving lipid profile fo diabetes in clinical setting and the different cooking methods of job's tears might affect the lipid profile of the diabetic rats.

• 대한금속재료학회지
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• 제49권9호
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• pp.678-685
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• 2011

The aim of this study was to determine the effect of applied pressure and sintering temperature on the microstructure and mechanical properties for spark plasma sintering (SPS) from commercial pure titanium (CP-Ti) powders. Spark plasma sintering is a relatively new sintering technique in powder metallurgy which is capable of sintering metal and ceramic powers quickly to full density at a fairly low temperature due to its unique features. SPS of -200 mesh or -400 mesh CP-Ti powders was carried out in an $Ar+H_2$ mixed gas flowing atmosphere between $650^{\circ}C$ and $750^{\circ}C$ under 10 to 80 MPa pressure. When SPS was carried out at relatively low temperatures ($650^{\circ}C$ to $750^{\circ}C$), the high (>60 MPa) pressure had a marked effect on densification and grain growth suppression. The full density of titanium was achieved at temperatures and pressures above $700^{\circ}C$ and 60 MPa by spark plasma sintering. The crystalline phase and microstructure of titanium sintered up to $700^{\circ}C$ consisted of ${\alpha}$-Ti and equiaxed grains. Vickers hardness ranging from 293 to 362 Hv and strength ranging from 304 to 410 MPa were achieved for spark plasma sintered titanium.

• 한국전기전자재료학회논문지
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• 제22권4호
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• pp.350-354
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• 2009

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).