• Title/Summary/Keyword: High density plasma

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Simulation of Photon Acceleration with Plasma Wake Fields (플라즈마 항적장을 이용한 광자 가속 시뮬레이션)

  • Lee, Hae-June;Kim, Guang-Hoon;Kim, Changbum;Kim, Jong-Uk;Hyyong Suk
    • Proceedings of the Optical Society of Korea Conference
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    • 2002.07a
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    • pp.242-243
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    • 2002
  • From the dispersion relation of an electromagnetic (EM) wave propagating through plasmas, w$\^$2/ = w$\sub$p/$\^$2/+c$\^$2/k$\^$2/ the phase velocity (w/k) of the wave is large at high density where w$\sub$p/ is large, and small at low density Therefore, when a laser pulse is located on a downward density gradient of a plasma wave, the phase velocity of the back of the pulse becomes faster than that of the front of the pulse and the pulse wavelength decreases. (omitted)

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A Study on Emission Characteristics of Ne Gas Using a Single Langmuir Probe Method in Radio-Frequency Inductively Coupled Plasma (13.56MHz ICP에서 단일 탐침법에 의한 Ne 가스의 발광특성 연구)

  • Jo, Ju-Ung;Choi, Yong-Sung;Kim, Yong-Kab;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.150-152
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    • 2004
  • In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an Ne discharge for pressure from 10 [mTorr] and input RF power 100 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

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A Study on Emission Characteristics of Ar, Ne Gas Using a Single Langmuir Probe Method in Radio-Frequency Inductively Coupled Plasma (13.56MHz ICP에서 단일 탐침법에 의한 Ar, Ne 가스의 발광특성 연구)

  • Jo, Ju-Ung;Choi, Yong-Sung;Kim, Yong-Kab;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.167-170
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    • 2004
  • In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an Argon, Ne discharge for pressure from 1 [mTorr] and input RF power 10 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

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Distribution of Ions and Molecules Density in N2/NH3/SiH4 Inductively Coupled Plasma with Pressure and Gas Mixture Ratio) (N2/NH3/SiH4 유도 결합형 플라즈마의 압력과 혼합가스 비율에 따른 이온 및 중성기체 밀도 분포)

  • Seo, Kwon-Sang;Kim, Dong-Hyun;Lee, Ho-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.2
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    • pp.370-378
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    • 2017
  • A fluid model of 2D axis-symmetry based on inductively coupled plasma (ICP) reactor using $N_2/NH_3/SiH_4$ gas mixture has been developed for hydrogenated silicon nitride ($SiN_x:H$) deposition. The model was comprised of 62 species (electron, neutral, ions, and excitation species), 218 chemical reactions, and 45 surface reactions. The pressure (10~40 mTorr) and gas mixture ratio ($N_2$ 80~96 %, $NH_3$ 2~10 %, $SiH_4$ 2~10 %) were considered simulation variables and the input power fixed at 1000 W. Different distributions of electron, ions, and molecules density were observed with pressure. Although ionization rate of $SiH_2{^+}$ is higher than $SiH_3{^+}$ by electron direct reaction with $SiH_4$, the number density of $SiH_3{^+}$ is higher than $SiH_2{^+}$ in over 30 mTorr. Also, number density of $NH^+$ and $NH_4{^+}$ dramatically increased by pressure increase because these species are dominantly generated by gas phase reactions. The change of gas mixture ratio not affected electron density and temperature. With $NH_3$ and $SiH_4$ gases ratio increased, $SiH_x$ and $NH_x$ (except $NH^+$ and $NH_4{^+}$) ions and molecules are linearly increased. Number density of amino-silane molecules ($SiH_x(NH_2)_y$) were detected higher in conditions of high $SiH_x$ and $NH_x$ molecules density.

Etching Mechanism of $YMnO_3$ Thin Films in High Density $CF_4$/Ar Plasma ($CF_4$/Ar 가스 플라즈마를 이용한 $YMnO_3$ 박막의 식각 반응연구)

  • 김동표;김창일;이철인
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.959-964
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    • 2001
  • We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).

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Plasma Charge Damage on Wafer Edge Transistor in Dry Etch Process (Dry Etch 공정에 의한 Wafer Edge Plasma Damage 개선 연구)

  • Han, Won-Man;Kim, Jae-Pil;Ru, Tae-Kwan;Kim, Chung-Howan;Bae, Kyong-Sung;Roh, Yong-Han
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.109-110
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    • 2007
  • Plasma etching process에서 magnetic field 영향에 관한 연구이다. High level dry etch process를 위해서는 high density plasma(HDP)가 요구된다. HDP를 위해서 MERIE(Magnetical enhancement reactive ion etcher) type의 설비가 사용되며 process chamber side에 4개의 magnetic coil을 사용한다. 이런 magnetic factor가 특히 wafer edge부문에 plasma charging에 의한 damage를 유발시키고 이로 인해 device Vth(Threshold voltage)가 shift 되면서 제품의 program 동작 문제의 원인이 되는 것을 발견하였다. 이번 연구에서 magnetic field와 관련된 plasma charge damage를 확인하고 damage free한 공정조건을 확보하게 되었다.

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Measurement of fast ion life time using neutron diagnostics and its application to the fast ion instability at ELM suppressed KSTAR plasma by RMP

  • Kwak, Jong-Gu;Woo, M.H.;Rhee, T.
    • Nuclear Engineering and Technology
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    • v.51 no.7
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    • pp.1860-1865
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    • 2019
  • The confinement degradation of the energetic particles during RMP would be a key issue in success of realizing the successful energy production using fusion plasma, because a 3.5 MeV energetic alpha particle should be able to sustain the burning plasma after the ignition. As KSTAR recent results indicate the generation of high-performance plasma(${\beta}_p{\sim}3$), the confinement of the energetic particles is also an important key aspect in neutral beam driven plasma. In general, the measured absolute value of the neutron intensity is generally used for to estimating the confinement time of energetic particles by comparing it with the theoretical value based on transport calculations. However, the availability of, but for its calculation process, many accurate diagnostic data of plasma parameters such as thermal and incident fast ion density, are essential to the calculation process. In this paper, the time evolution of the neutron signal from an He3 counter during the beam blank has permitted to facilitate the estimation of the slowing down time of energetic particles and the method is applied to investigate the fast ion effect on ELM suppressed KSTAR plasma which is heated by high energy deuterium neutral beams.

Plasma Sources for Production of High Flux Particle Beams in Hyperthermal Energy Range (하이퍼써멀 에너지 영역에서 높은 플럭스 입자빔 생성을 위한 플라즈마 발생원)

  • Yoo, S.J.;Kim, S.B.
    • Journal of the Korean Vacuum Society
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    • v.18 no.3
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    • pp.186-196
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    • 2009
  • Since it is difficult to extract a high flux ion beam directly at an energy of hyperthermal range ($1{\sim}100\;eV$), especially, lower than 50 eV, the ions should be neutralized into neutral particles and extracted as a neutral beam. A plasma source required to generate and efficiently transport high flux hyperthermal neutral beams should be easily scaled up and produce a high ion density (${\ge}10^{11}\;cm^{-3}$) even at a low working pressure (${\le}$ 0.3 mTorr). It is suggested that the required plasma source can be realized by Electron Cyclotron Resonance (ECR) plasmas with diverse magnetic field configurations of permanent magnets such as a planar ECR plasma source with magnetron field configuration and cylindrical one with axial magnetic fields produced by permanent magnet arrays around chamber wall. In both case of the ECR sources, the electron confinement is based on the simple mirror field structure and efficiently enhanced by electron drifts for producing the high density plasma even at the low pressure.