• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권12호
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• pp.601-605
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• 2006

The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multi-layer interconnections in smaller scales with higher integration density. Low-k materials are applied to the inter-metal dielectric (IMD) materials in order to overcome the RC delay. Relaxation continuum (RCT) model that includes neutral-species transport model have developed to model the etching process in a capacitively coupled plasma (CCP) device. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. For the etching of low-k materials by $N_2/H_2$ plasma, N and H atoms have a big influence on the materials. Moreover the distributions of excited neutral species influence the plasma density and profile. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatio-temporal steady state profile could be obtained.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2012년도 제38회 춘계학술대회논문집
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• pp.545-550
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• 2012

고에너지 금속 분말은 높은 용융점을 가진 산화피막의 점화방해 효과로 인해 점화가 용이하지 않다. 따라서 점화를 위해서는 단시간에 높은 온도의 열적 공간을 형성할 수 있는 점화원이 필요하며 스팀 플라즈마 점화원은 탄화수소 계열의 점화원, 수소-산소 점화원, 레이져 점화원과 다르게 짧은 시간에 안정적으로 5,000 K 이상의 열적 공간을 형성할 수 있다. 또한 스팀을 작동가스로 사용하므로 친환경적이며 경제적이다. 따라서 본 연구는 스팀 플라즈마 점화기를 연소 시스템에 적용하기 위한 기초 연구로서 방출 분광법을 사용하여 플라즈마의 온도 분포 및 화학종을 분석하였으며, 연소시스템에 적용하여 금속 분말의 점화를 가시적으로 확인하였다.

• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.346-350
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• 2015

In this study, we carried out an investigation of the etch characteristics of TiO₂ thin films and the selectivity of TiO₂ to SiO₂ in adaptive coupled C1₂/Ar plasma. The maximum etch rate of the TiO₂ thin film was 136±5 nm/min at a gas mixing ratio of C1₂/Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.

• 한국진공학회지
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• 제5권2호
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• pp.169-174
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• 1996

The applications of the high density plasma sources to the etching in semiconductor fabrication process are actively studied because of the more strict requirement from the dry etching process due to shrinking down of the critical dimension. But in the oxide etching with the high density plasma sources, abundant fluorine atoms released from the flurocarbon feed gas make it difficult to get the highly selective $SiO_2/Si$ etching. In this study, to improve the $SiO_2/Si$ etch selectivity through the control of the radical loss channels, we propose the wall heating , one of methods of controlling loss mechanisms. With appearance mass spectroscopy(AMS) and actinometric optical emission spectroscopy(OES), the increase of both radicals impinging on the substrate and existing in bulk plasma, and the decrease of the fluorine atom with wall temperature are observed. As a result, a 40% improvement of the selectivity was achieved for the carbon rich feed gas.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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• pp.264-267
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• 1993

A high plasma density of $10^{12}cm^{-3}$ can be produced at the pressure of few mTorr with R. F input power of 300-400W. A radially uniform plasma to a radius of 7cm at the substrate was produced at the pressure of 1 mTorr. The electron density and temperature were confirmed with double Langmuir probe, $\mu$-wave interferometer. It has bee found that the dispersion relation N/B=constant not be applied at the low R.F input power(<600W) but can be applied at high R.F input power(>600W).

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1619-1621
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• 1994

Both Facing Target Sputtering(FTS) and Cylindrical Post-Magnetron Sputtering(CPMS) systems have been degigned in order to form high density plasma and to obtain high deposition rate. However, these two systems have some different applications, and discharge characteristics of these two systems are not well known. In this paper, the discharge characteristics and plasma parameters of both FTS and CPMS systems are studied experimentally. It is found that these two system show some different discharge characteristics under magnetic fields. The plasma density and electron temperature of these two systems are in the range of $10^{10}{\sim}10^{11}[cm^{-3}]$ and $3.5{\sim}5.5[eV]$, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.2074-2076
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• 2000

In this paper, RFICP equipment is designed and manufactured with the aid of high frequency discharge to produce uniform plasma with high density and large diameter. And $SF_6$ gas is used to investigate plasma characteristics. The electron density and temperature, potential dependence of $SF_6$ plasma in accordance with its operating pressure, gas flux and input power are measured by the method of Langmuir probe. The etching characteristics of the plasma is researched in accordance with operating pressure, gas flux, input power to apply to Silicon Wafer which is used in the field of semiconductor process. The proposed RFICP equipment, in this paper, has relatively excellent etching characteristics, and is thought to be element of oxidization-sheath etching facility in semiconductor manufacturing process.

• 한국전기전자재료학회논문지
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• 제16권6호
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• pp.460-464
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• 2003

The barium strontium titannate ((Ba,Sr)TiO$_3$:BST) thin films were etched in an inductively coupled plasma (ICP) as a function of CF$_4$/Ar gas mixing ratio. Under CF$_4$(20%)/Ar(80%), the maximum etch rate of the BST films was 400 $\AA$/min. Etching products were redeposited on the surface of BST and then the nature of crystallinity were varied. Therefore, we investigated the etched surface of BST by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The plasma damages were evaluated in terms of leakage current density by Agilent 4145C and dielectric constant by HP 4192 impedance analyzer. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. After annealing at 600 $^{\circ}C$ for 10 min in $O_2$ ambient, the leakage current density, roughness and nonvolatile etch byproducts reduced. From this results, the plasma induced damages were recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

• 한국분말재료학회지
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• 제5권1호
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• pp.28-34
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• 1998

Plasma sprayed ceramic coatings are widely used in various industrial fields to improve their properties or to reduce the production cost. The ceramic powders for plasma spray coating have been mainly manufactured by spray drying or fused+crushed process. In this study, chromium oxide which has better mechanical properties than those of the other ceramic was selected and agglomerated chromium oxide powders for plasma spray coating were produced by spray drying process with a various processing condition. The large hollow powders and the harsh surfaced powders are formed at high slurry feed rate more than 163 g/min. and low binder concentration less than 2wt%, respectively. These powders cause the considerable decrease of flowability and apparent density. The powders produced by spray drying process have the spherical shape with the mean size of 45 ${\mu}m$, but these are shown lower apparent density and flowability than the powders produced by fused+crushed powders. The plasma spray coated layers by spray dried powders are shown a different microstructure with that by fused+crushed powders in porosity shape, but their properties such as density, hardness and bond strength are similar.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.310-311
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• 2011

Dual-frequency (DF) capacitively coupled plasmas (CCP) are used to separately control the mean ion energy and flux at the electrodes [1]. This separate control in capacitively coupled radio frequency discharges is one of the most important issues for various applications of plasma processing. For instance, in the Plasma Enhanced Chemical Vapor Deposition processes such as used for solar cell manufacturing, this separate control is most relevant. It principally allows to increase the ion flux for high deposition rates, while the mean ion energy is kept constant at low values to prevent highly energetic ion bombardment of the substrate to avoid unwanted damage of the surface structure. DF CCP can be analyzed in a fashion similar to single-frequency (SF) driven with effective parameters [2]. It means that DF CCP can be converted into SF CCP with effective parameters such as effective frequency and effective current density. In this study, comparison of DF CCP and its converted effective SF CCP is carried out through particle-in-cell/Monte Carlo (PIC-MCC) simulations. The PIC-MCC simulation shows that DF CCP and its converted effective SF CCP have almost the same plasma characteristics. In DF CCP, the negative resistance arises from the competition of the effective current and the effective frequency [2]. As the high-frequency current increases, the square of the effective frequency increases more than the effective current does. As a result, the effective voltage decreases with the effective current and it leads to an increase of the ion flux and a decrease of the mean ion energy. Because of that, the negative resistance regime can be called the preferable regime for solar cell manufacturing. In this preferable regime, comparison of DF (13.56+100 or 200 MHz) CCP and SF (60 MHz) CCP with the same effective current density is carried out. At the lower effective current density (or at the lower plasma density), the mean ion energy of SF CCP is lower than that of DF CCP. At the higher effective current density (or at the higher plasma density), however, the mean ion energy is lower than that of SF CCP. In this case, using DF CCP is better than SF CCP for solar cell manufacturing processes.