• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.4
• /
• pp.261-266
• /
• 1998

In developing the high density memory device, the etching of fine pattern is becoming increasingly important. Therefore, definition of ultra fine line and space pattern and minimization of damage and contamination are essential process. Also, the high density plasma in low operating pressure is necessary. The candidates of high density plasma sources are electron cyclotron resonance plasma, helicon wave plasma, helical resonator, and inductively coupled plasma. In this study, planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, flow rate, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.65 no.10
• /
• pp.1706-1711
• /
• 2016

Electromagnetic wave simulation was performed to predict characteristics of manufactured cutoff probe at low temperature magnetized plasma medium. Microwave cutoff probe is designed for research the properties of magnetized inductively coupled plasma. It was shown that the cutoff probe method can safely be used for weakly magnetized high density plasma sources. Cutoff probe system with two port network analyzer has been prepared and applied to measure electron density distributions in large area, 13.56MHz driven weakly magnetized inductively coupled plasma source. The results shown that, the plasma frequency confirmed cut-off characteristics in low temperature plasma. Especially, cut-off characteristics was found at upper hybrid resonance frequency in the environment of the magnetic field. In case of a induced weak magnetic field in inductively coupled plasma, plasma density estimated from the cutoff frequency in the same way at unmagnetized plasma due to nearly same plasma frequency and upper hybrid resonance frequency. The plasma density is increased and uniformity is improved by applying a induced weak magnetic field in inductively coupled plasma.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.143.1-143.1
• /
• 2015

An inductively coupled plasma source driven by 13.56MHz was prepared for the deposition of a-C:H thin film. Properties of the plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe at first and second harmonic frequency were 13.56Mhz and 27.12Mhz respectively. Dependencies of plasma parameters on process parameters were agreed with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.210.2-210.2
• /
• 2016

An inductively coupled plasma source was prepared for the deposition of a-C:H thin film. Properties of the inductively coupled plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe harmonic frequency were 13.56Mhz and 27.12Mhz. Dependencies of plasma parameters on process parameters were accord with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.3
• /
• pp.133-136
• /
• 2004

Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56(MHz) have been measured over a wide range of power at gas pressure ranging from 1∼70(mTorr).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.234.1-234.1
• /
• 2014

Many studies have been investigated on high density plasma source (Electron Cyclotron Resonance[ECR], Inductively Coupled Plasma[ICP], Helicon plasma) for large area source after It is announced that productivity of plasma process depends on plasma density. Among them, Some researchers have been studied on multiple sources In this study, we attempted to determine the possibility of multiple inductively coupled plasma (ICP), and helicon plasma sources for large-area processes. Experiments were performed with the one and two coils to measure plasma and electrical parameters, and a circuit simulation was performed to measure the current at each coil in the 2-coil experiment. Based on the result, we could determine the possibility of multiple ICP sources due to a direct change of impedance due to current and saturation of impedance due to the skin-depth effect. However, a helicon plasma source is difficult to adapt to the multiple sources due to the consistent change of real impedance due to mode transition and the low uniformity of the B-field confinement. As a result, it is expected that ICP can be adapted to multiple source for large-area processes.

• Journal of the Korean Vacuum Society
• /
• v.17 no.5
• /
• pp.426-434
• /
• 2008

A space averaged $SiH_4/O_2/Ar$ simulator for the high density inductively coupled plasma sources for $SiH_4/O_2/Ar$ discharge is developed. The developed simulator uses space averaged fluid equations for electrons, positive ions, negative ions, neutral species, and radicals in $SiH_4/O_2/Ar$ plasma discharge, and the electron heating model including the anomalous skin effect. Using the developed simulator, the dependency of the density of charged particles, neutral particles, and radicals, the electron temperature, the plasma resistance, and the power absorption coefficient for the RF power and pressure is calculated.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.933-936
• /
• 2007

An inductively coupled plasma source with internaltype linear inductive antennas named as "multiple Utype antenna" was developed for the substrate size of $2,300mm\;{\times}\;2,000mm$. High density plasmas on the order of $1.18\;{\times}\;10^{11}\;cm^{-3}$ could be obtained and the RF power of 8kW with good plasma stability.

• Proceedings of the KIEE Conference
• /
• 2003.07c
• /
• pp.1704-1706
• /
• 2003

Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56 [MHz] have been measured over a wide range of power at gas pressure ranging from $1{\sim}70$ [mTorr].

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.8
• /
• pp.433-442
• /
• 2004

Various models and various boundary conditions have been suggested for fluid transport simulations of high density plasma discharges such as the inductively coupled plasma discharge. In this work, we compare the various models using one-dimensional simulations based on the FDM(finite difference method), the upwind scheme, the power-law scheme, and the dielectric relaxation scheme［l］ Comparing the exactness, the numerical stability and the efficiency of the various models. the most adoptable model is suggested.