• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1085-1092
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• 2001

The high efficient AC powder EL devices classified by low cost and low power consumption type fabricated using screen printing method with film thickness and organic binder. Brightness and current density were measured at frequency range of 400Hz∼1kHz and voltage range of 50∼300V$\_$rms/ to estimate optoelectrical properties of AC powder EL devices, respectively. Frequency generator was used as system producing frequency and voltage of a sine wave. Also brightness and current density were measured by luminometer and multimeter. In the case of low cost type AC powder EL device, brightness and current density were about 43 cd/m$^2$and 20$\mu$A/cm$^2$when the thickness of phosphor and dielectric layer was 45∼50$\mu$m under no addition of plasticizer respectively. In the case of low power consumption type AC powder EL device, brightness and current density were about 74 cd/m$^2$and 30∼40$\mu$A/cm$^2$when the thickness of phosphor and dielectric layer was 45∼50$\mu$m and 15∼20$\mu$m under addition of 15wt% plasticizer respectively. Also, AC powder EL device fabricated in this study showed absolutely excellent characteristics as the lifetime was longer than products of other company.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.1
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• pp.329-332
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• 2012

LEDs are using widely in a field of illumination, LCD LED backlight, mobile signals because they have several merits, such as low power consumption, long lifetime, high brightness, fast response, environment friendly. To achieve high performance LEDs, one needs to enhance output power, reduce operation voltage, and improve device reliability. In this paper, we have proposed that the optimum design and specialized process could improve the performance of LED chip. It was showed an output power of 7cd and input supplied voltage of 3.2V by the insertion technique of current blocking layer. In this paper, GaN-based LED chip which is built on the sapphire epi-wafer by selective MOCVD were designed and developed. After that, their performances were measured. It showed the output power of 7cd more than conventional GaN-based chip. It will be used the lighting source of a medical equipment and LCD LED TV with GaN-based LED chip.

• Proceedings of the KIPE Conference
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• 2007.07a
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• pp.244-246
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• 2007

The LCD backlight technique using light-emitting diode(LED) has been studied in the recent backlight market. The white light is need for LCD backlight and it is generally implemented by combining the RGB-LEDs to obtain the high brightness. However, RGB-LEDs have different color characteristics for the current and temperature variations, which results in the color shift problem. The color shift characteristics of RGB-LEDs for the current and temperature variations are investigated in this paper. This result can be used to control the color of backlight system using RGB-LEDs.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1033-1034
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• 2005

High resolution 2.1” QVGA LTPS LCD (190ppi) having high aperture ratio of 65% could be successfully developed using state-of-the-art SLS technology and active/gate storage structure. Cost effective P-MOS 6-Mask structure was used. Full gate and transmission gate circuits are integrated in the panel. The high aperture ratio was obtained by using active/gate capacitance structure, which can reduce storage capacitance area. The aperture ratio was increased to 65% from 49% of conventional gate/data capacitance structure. The brightness was increased from 180cd to 270cd without any degradation of optical properties such as contrast ratio, flicker or crosstalk.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1035-1037
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• 2005

2.32-inch $320{\times}350$ TFT-LCD with high resolution (206PPI) for advanced mobile phones could be successfully developed. The compact pixel design based on PMOS SLS technique is used to achieve this high resolution. Gate driver and part of data driver are integrated onto the glass substrate. High brightness (170cd) and contrast ratio (400:1) were obtained with very low flickering and crosstalk levels.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.4
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• pp.320-326
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• 2014

In this paper, the new smart dimming algorithm which is mixed with PWM and PAM control method is proposed for reducing the power consumption of LED TV Backlight. The proposed technique is using the curve characteristics of LED forward voltage and current which is proportionally changing LED forward voltage as changing LED forward current. Therefore, each PWM and PAM control method has different LED forward voltage and current in the same brightness condition. The PWM control method adjusts the brightness of LED TV Backlight by only varying the duty ratio of PWM and constantly sustaining the amplitude of LED forward current and voltage. So, the level of LED forward current and voltage in the PWM control method is relatively high and constant regardless of duty ratio of PWM. On the other hand, the PAM control method adjusts the brightness of LED TV Backlight by directly varying the level of LED forward current. So, the level of LED forward current and voltage in the PAM control method is lowered according to the brightness level. For the above-mentioned reason, the PAM control method has the advantage of reducing the total power consumption of LED TV Backlight at the brightness condition of below 100%, compared with PWM control method. By implementing this characteristic to LED driver circuit with control algorithm in MCU, the power consumption of LED TV Backlight can expect to be reduced. The effectiveness of the proposed method, new smart dimming algorithm, CPWAM(=Conditional Pulse Width Amplitude Modulation), has been verified by experimental results.

• Journal of Information Display
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• v.1 no.1
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• pp.48-51
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• 2000

In this work, we proposed a reflective antiferroelectric liquid crystal display (AFLCD) using a half-wave cell whose inplane tilt angle is $22.5^{\circ}$. To check the validity of our design, we fabricated a reflective half-wave AFLC cell of which inplane tilt angle is $24.9^{\circ}$, and measured VIS reflection spectra, contrast ratio and response time. In the results, the half-wave AFLC cell in the reflective configuration exhibits high brightness, high contrast ratio of 20:1, and fast response time of $700{\mu}s$.

• Journal of Information Display
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• v.12 no.1
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• pp.11-15
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• 2011

An inverse-twisted-nematic (ITN) transflective (TRF) liquid crystal (LC) display, where two imprinted optical films (IOFs) with surface microstructures are embedded was developed. One of the IOFs serves as an in-cell patterned retarder with multioptic axes, and the other behaves as a viewing-angle enhancement film. In the presence of an applied voltage, the surface microstructures on the IOFs provide the spontaneous twist of the LC from a vertically aligned state to a $90^{\circ}$ twisted-nematic (TN) state in the transmissive part, and to a $45^{\circ}$ TN state in the reflective part. The developed ITN TRF LC display exhibits high transmission and reflectance, fast response, and wide-viewing characteristics, along with achromaticity.

• Journal of Sensor Science and Technology
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• v.7 no.6
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• pp.432-436
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• 1998

Recently, the PDLC(Polymer Dispersed Liquid Crystal) is being developed lively to make a large display device using a liquid crystal. Because of low light loss, high brightness, and simple fabrication process, it is made easily to large display device, In this study, the response time and light transmittance by the applied voltage is measured to analyze the electro-optical characteristics of PDLC. The He-Ne laser is applied to the PDLC cell, the light transmittance is measured using the photodiode and the result is analyzed and displayed graphically by the digital oscilloscope. The result of comparison between the PDLC and the present LCD is used to study the potential as a display device.

• Korean Journal of Optics and Photonics
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• v.12 no.3
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• pp.235-239
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• 2001

In this paper, we propose an optical configuration of a reflective AFLC display mode using a half-wave AFLC cell in which inplane tilt angle is $22.5^{\circ}C$. To check the validity of our design, we fabricate a reflective half-wave AFLC cell of which the in-plane tilt angle is $24.9^{\circ}C$, and measure viewing angle and visible spectra characteristics. In the results, the half-wave AFLC cell in the reflective configuration exhibits wide viewing-angle as well as high brightness and contrast. trast.