• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.463-464
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• 2006

This paper present experimental results by non-contact mode Atomic Force Microscopy using high aspect ratio tips (HAR-T). We fabricated the carbon nanotube tip based on dielectrophoresis and the carbon nano probe by focused ion beam after dielectrophoretic assembling. In this paper, we measure AAO sample and trench structure to estimate HAR-T's performance and compared with conventional Si tip. We confirmed that results of HAR-T's performance in non contact mode was very superior than conventional tip.

• 한국정밀공학회지
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• 제23권3호
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• pp.156-162
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• 2006

Direct fabrication of nano patterns has been studied employing a nano-stereolithography (NSL) process. The needs of nano patterning techniques have been intensively increased for diverse applications for nano/micro-devices; micro-fluidic channels, micro-molds. and other novel micro-objects. For fabrication of high-aspect-ratio (HAR) patterns, a thick spin coating of SU-8 process is generally used in the conventional photolithography, however, additional processes such as pre- and post-baking processes and expansive precise photomasks are inevitably required. In this work, direct fabrication of HAR patterns with a high spatial resolution is tried employing two-photon polymerization in the NSL process. The precision and aspect ratio of patterns can be controlled using process parameters of laser power, exposure time, and numerical aperture of objective lens. It is also feasible to control the aspect ratio of patterns by truncation amounts of patterns, and a layer-by-layer piling up technique is attempted to achieve HAR patterns. Through the fabrication of several patterns using the NSL process, the possibility of effective patterning technique fer various N/MEMS applications has been demonstrated.

• 대한기계학회논문집A
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• 제40권8호
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• pp.731-736
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• 2016

본 연구에서는 의용생체공학에 널리 사용되는 미소바늘과 같은 3차원 고종횡비 미소구조물을 용이하게 제작할 수 있는 하이브리드 자외선 노광법에 대해 기술한다. 하이브리드 자외선 노광법은 기존에 사용되고 있는 경사노광, 회전노광 및 역노광을 혼합한 방법으로, 경사 및 회전노광은 경사진 축대칭 형상을 가지는 3차원 미소구조물의 제작이 가능하도록 하고 역노광은 자외선 노광공정 중 필연적으로 발생하는 하부기판에서의 자외선 반사를 최소화 시킨다. 자체 개발한 자외선 노광시스템과 SU-8 음성감광제를 이용하여 하이브리드 자외선 노광법의 다양한 공정조건이 최종 제작된 3차원 고종횡비 미소구조물 형상(종횡비, 선단의 곡률반경 등)에 미치는 효과를 확인한다. 또한 SU-8의 소프트 베이킹(soft baking) 조건과 미소구조물 선단 형상 사이의 관계에 대해서도 논의한다.

• 반도체디스플레이기술학회지
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• 제21권4호
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• pp.53-58
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• 2022

Shape changes of hard mask play a key role in the aspect ratio dependent etch (ARDE). For etch process using high density and energy ions, deformation of hard mask shape becomes more severe, and high aspect ratio (HAR) etch profile is distorted. In this study, polygonal geometric model for shape-deformation of amorphous carbon layered hard mask is suggested to control etch profile during the process. Mask shape is modeled with polygonal geometry consisting of trapezoids and rectangles, and it provides dynamic information about angles of facets and etched width and height of remained mask shape, providing important features for real-time HAR etch profiling.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.142-142
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• 2017

High Flory-Huggins interaction parameter (${\chi}$)를 가지는 polystyrene-block-dimethylsiloxane (PS-b-PDMS)는 초미세 패턴 제작과 우수한 defect density, 우수한 edge roughness 특성으로 향상된 패턴을 제공한다는 점에서 반도체 분야에서 많은 연구가 되고 있다. 하지만, PS와 PDMS 사이에 존재하는 큰 surface tension의 차이로 인해 PDMS는 PS와 air 사이에서 segregate되기 때문에 수직배향에 불리하여 high aspect ratio (HAR)을 가지는 cylinder, lamellar 패턴 제작에 있어 큰 어려움을 가진다. 본 연구에서는 이러한 문제를 해결하기 위해, PS-b-PDMS BCP 패턴과 하부 실리콘 기판 사이에 amorphous carbon layer (ACL)를 삽입하여 효과적으로 pattern transfer하는 공정을 연구하였다. 플라즈마를 이용하여 무한대에 가까운 etch selectivity를 가지는 식각 공정을 개발함으로써 낮은 aspect ratio를 가지는 PS-b-PDMS BCP 패턴의 한계점을 극복하였다. Large-x value를 가지는 BCPs를 이용하여도 매우 높은 aspect ratio를 가지면서 동시에 pattern quality를 향상시킬 수 있는 plasma process를 제시하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.233-236
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• 2003

수소 가스발생을 위한 마이크로 수소 발생기 개발에서 MEMS 공정을 이용하여 기판에 반응 유로를 위해 HAR(High Aspect Ratio) 구조물을 형성하고 Ru(ruthenium) 박막을 증착하여 수소 발생량을 측정하였다. Pyrex glass 기판상에 sand blast 방법으로 반응 구조물을 만들었으며, 그 위에 sputter system을 이용하여 Ru 박막을 $5500{\AA}$었다. 수소 발생량은 촉매 박막이 증착된 기판 재질과 기판의 표면 상태 그리고 마이크로 수소 발생기에 두께로 증착하였다. 반응 구조물의 전체 크기가 가로 2.0 cm, 세로 2.0cm의 면적에서 약 12.3 ml/min의 수소가 측정되 형성한 구조물의 형상에 의존하였다. Pyrex glass 기판을 사용하여 HAR로 반응 구조물을 형성한 경우에 단위 면적당 Ru 박반응 막의 반응 표면적이 증가되어 기존에 구조물을 형성하지 않은 평면 기판에 비교하여 약 5.5배 이상의 수소 발생이 증가하였다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2007년도 추계학술대회 논문집
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• pp.356-359
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• 2007

Continuing improvements in integrated circuit chip density and functionality have mostly contributed toward a very large-scale integrated circuit(VLSI) and display device. In order to test (pass or fail) all of the high integrated semiconductor chip and display device, fine pitch probes are used. Fine pitch probes are manufactured by electroforming process of a Ni alloy in an electrolytic bath. In this paper, we expect that the electric field in bath with the Finite Element Method and applying the FEM result. So, we can obtained the probes that have high aspect ratio of 10 : 1

• 대한기계학회논문집A
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• 제30권10호
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• pp.1314-1319
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• 2006

This paper describes the novel fabrication method of the high-aspect-ratio nano structure which is impossible by conventional method using a shadow mask and a Deep X-ray Lithography (DXRL). The shadow mask with $1{\mu}m-sized$ apertures is fabricated on the silicon membrane using a conventional UV-lithography. The size of aperture is reduced to 200nm by accumulated low stress silicon nitride using a LPCVD (low pressure chemical vapor deposition) process. The X-ray mask is fabricated by depositing absorber layer (Au, $3{\mu}m$) on the back side of nano shadow mask. The thickness of an absorber layer must deposit dozens micrometers to obtain contrast more than 100 for a conventional DXRL process. The thickness of $3{\mu}m-absorber$ layer can get sufficient contrast using a central beam stop method, blocking high energy X-rays. The nano circle and nano line, 200nm in diameter in width, respectively, were demonstrated 700nm in height with a negative photoresist of SU-8.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• Tribology and Lubricants
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• 제33권6호
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• pp.282-287
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• 2017

SU-8 is an epoxy-type photoresist widely used for the fabrication of high-aspect-ratio (HAR) micro-structures in micro-electro-mechanical systems (MEMS). To fabricate highly integrated structures, chemical mechanical polishing (CMP) has emerged as the preferred manufacturing process for planarizing the MEMS structure. In SU-8 CMP, an oxidizer decomposes organic impurities and particles in the CMP slurry remove the chemically reacted surface of SU-8. To fabricate HAR microstructures using the CMP process, the adhesion between SU-8 and substrate material is important to avoid the delamination of the SU-8 film caused by the mechanical-dominant material removal characteristic. In this study, the friction force during the CMP process is measured with a CMP monitoring system to detect the delamination phenomenon and investigate the delamination of the SU-8 film from the silicon substrate under various pressure conditions. The increase in applied pressure causes an increase in the frictional force and wafer-edge stress concentration. The frictional force measurement shows that the friction force changes according to the delamination phenomenon of the SU-8 film, and that it is possible to monitor the delamination phenomenon during the SU-8 CMP process. The delamination at a high applied pressure is explained by the effect of stress distribution and pad deformation. Consequently, it is necessary to control the pressure of polishing, which can avoid the delamination in SU-8 CMP.