• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.664-670
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• 2015

A four-times-VDD switch that supports high and low voltage mode operations is demonstrated in a generic 65 nm logic process. The proposed switch shows the robust operation for supply voltages ranging from VDD to $4{\times}VDD$. A cascaded voltage switch and a voltage doubler based charge pump generate the intermediate supply voltage levels required for the proposed high voltage switch. All the high voltage circuits developed in this work can be implemented using standard logic transistors without being subject to any voltage overstress.

• Journal of Power Electronics
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• v.18 no.1
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• pp.11-22
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• 2018

This paper presents a single switch, high step-up, non-isolated dc-dc converter suitable for renewable energy applications. The proposed converter is composed of a coupled inductor, a passive clamp circuit, a switched capacitor and voltage lift circuits. The passive clamp recovers the leakage inductance energy of the coupled inductor and limits the voltage spike on the switch. The configuration of the passive clamp and switched capacitor circuit increases the voltage gain. A wide continuous conduction mode (CCM) operation range, a low turn ratio for the coupled inductor, low voltage stress on the switch, switch turn on under almost zero current switching (ZCS), low voltage stress on the diodes, leakage inductance energy recovery, high efficiency and a high voltage gain without a large duty cycle are the benefits of this converter. The steady state operation of the converter in the continuous conduction mode (CCM) and discontinuous conduction mode (DCM) is discussed and analyzed. A 200W prototype converter with a 28V input and a 380V output voltage is implemented and tested to verify the theoretical analysis.

• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.707-710
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• 2002

A 120kV/70A high voltage switch has been installed at Korea Atomic Energy Research Institute in Taejon to supply power with Korea Superconducting Tokamak Advanced Research (KSTAR) Neutral Beam Injection (NBI) system. NBI system requires fast cutoff of the power supply voltage for protection of the grid when arc detected and fast turn-on the voltage for sustaining the beam current. Therefore the high voltage switch and arc current detection circuit are important part of the NBI power supply and there are much need for high voltage solid state switches in NBI system and a broad area of applications. This switch consisted of 100 series connected MOSFETs and adopted the proposed simple and reliable gate drive circuit without bias supply, Various results taken during the commissioning phase with a 100kW resistive load and NBI source are shown. This paper presents the detailed design of 120kV/70A high voltage MOSFETs switch and simple gate drive circuit. Problems with the high voltage switch and gate driver and solutions are also presented.

• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.3
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• pp.153-160
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• 2018

Recent trends in high-power-density applications have highlighted the importance of designing power converters with high-frequency operation. However, conventional LLC resonant converters present limitations in terms of high-frequency driving due to switching losses during the turn-off period. Switching losses are caused by the overlap of the voltage and current during this period, and can be decreased by reducing the switch voltage. In turn, the switch voltage can be reduced through a series connection of four switches, and additional circuitry is essential for balancing the voltage of each switch. In this work, a three-level LLC resonant converter that can operate at high frequency is proposed by reducing switch losses and balancing the voltages of all switches with only one capacitor. The voltage-balancing principle of the proposed circuit can be extended to n-level converters, which further reduces the switch voltage stress. As a result, the proposed circuit is applicable to high-input applications. To confirm the validity of the proposed circuit, theoretical analysis and experimental verification results from a 350 W-rated prototype are presented.

• Journal of Power Electronics
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• v.16 no.2
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• pp.786-797
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• 2016

This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.

• Journal of Power Electronics
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• v.2 no.2
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• pp.104-111
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• 2002

This paper presents a new hybrid control scheme using Active-Clamped Class-E(ACCE) inverter for the Induction Heating (IH) jar. The proposed hybrid control scheme has characteristics, which acts as class-E inverter at lower switch voltage and ACCE inverter at higher switch voltage than reference voltage of the main switch by feeding back voltage of the switch. The proposedv hybrid control scheme also has advantage of conventional ACCE inverter such as Zero-Voltage-Switch(ZVS) of the main switch and the reduced switch voltage due to clamping cricuit. Moreover, the proposed hybrid control method using ACCE inverter has higher output power than convenional control scheme since ACCE inverter operates like class-E inverter at low input voltage condition. The principles of the proposed control are explained in detail and the validity of the proposed control scheme is verifed through the several interesting simulated and experimental results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.177-182
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• 2007

This paper presents the see-saw type RF MEMS switch based on a single crystalline silicon structure with narrow gap vertical comb. Low actuation voltage and high isolation are key features to be solved in electrostatic RF MEMS switch design. Since these parameters in conventional parallel plate RF MEMS switch designs are in trade-off relationship, both requirements cannot be met simultaneously. In the vertical comb design, however, the actuation voltage is independent of the vertical separation distance between the contact electrodes. Therefore, the large separation gap between contact electrodes is implemented to achieve high isolation. We have designed and fabricated RF MEMS switch which has 46dB isolation at 5GHz, 0.9dB insertion loss at 5GHz and 40V actuation voltage.

• Journal of IKEEE
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• v.23 no.3
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• pp.962-970
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• 2019

In this paper, the non-isolation, high-efficiency and high-voltage-output DC-DC converter using the self-driven synchronous switch is proposed. The proposed converter achieves high-voltage-output by applying a tapped inductor to the conventional boost DC-DC converter structure, and it reduces the voltage stress of main switch applying the lossless capacitor-diode (LCD) snubber to the switch. And the proposed converter applies the synchronous switch instead of the diode to the output part, and thus it resolves the reverse recovery problem and achieves high-efficiency. The synchronous switch of proposed converter uses the self-driven method and has a simple structure. In this paper, the operation principle of proposed converter is explained, and then, a design example of the converter prototype is presented. And the characteristics of the proposed converter are shown through experimental results of the prototype made with the designed circuit parameters.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.36-37
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• 2013

This paper presents high voltage operation sensing boost converter with high side current. Proposed topology has three functions which are high voltage driving, high side current sensing and low voltage boost controller. High voltage gate driving block provides LED dimming function and switch function such as a load switch of LED driver. To protect abnormal fault and burn out of LED bar, it is applied high side current sensing method with high voltage driver. This proposed configuration of boost converter shows the effectiveness capability to LED driver through measurement results.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2189-2191
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• 1999

To improve the reliability of the klystron-modulator systems, the stable operations of the thyratron an important factor of the system are required. The thyratron always has a possibility of self-fire according to the conditions of the applied high voltage and this induces the system fault. Therefore a command charging method was introduced to reduce the applied tim8 of the high voltage into the thyratron. The high voltage switch used in the command charging method is the SCR (1.6 kV, 50A) and consists of 10 SCRs in series to discharge 10 kV. A pulse transformer was used to apply the trigger pulse. The objectives of this research are the fabrication of the semiconductor switch and the study of the experimental result of the operation characteristics of the high voltage semiconductor switch.