• Title/Summary/Keyword: High Power-Factor

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The Analysis of Current Limiting Performance in a High-$T_c$ Superconductor using Flux-Lock Concepts

  • 임성훈;최효상;김영순;이성룡;한병성
    • Progress in Superconductivity
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    • v.3 no.2
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    • pp.229-234
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    • 2002
  • In this paper, we analyzed the fault current performance in a $high-T_{c}$ superconductor(HTS) which was installed on flux-lock reactor with an external magnetic field coil covering the HTS. In this HTS fault current limiter using flux-lock concepts, the initial limiting current level can be controlled by adjusting the inductance of the coils. Furthermore, the current limiting characteristics of $high-T_{c}$ superconducting FCL can be improved by applying the external magnetic field into the $high-T_{c}$ superconductor. This paper discusses current limiting performance according to the inductance of the coil 1 in two cases with ac magnetic field coil or not and suggests the methods to improve the current limiting factor $P_{limit}$, which is defined as the ratio of the limited current $I_{FCL}$ at the current limiting phase to the prospective short -circuit current $I_{PSC}$.TEX> PSC/.

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Process Development for Enhancement of High Temperature Thermoelectric Properties in a p-Type Skutterudite (P-형 Skutterudite 소재의 고온 열전물성 제어를 위한 공정 개발)

  • Liu, Peng Ju;Nou, Chang Wan;Choi, Soon-Mok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.6
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    • pp.495-499
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    • 2020
  • Power factor improvement at high temperatures has been a major research topic for the development of skutterudite thermoelectric materials. Here, we attempted to optimize the process parameters for manufacturing skutterudite materials, especially for p-type systems. We focused on the effect of aging time variation to maximize the high-temperature performance of the Ce-filled Fe3CoSb12 skutterudite system. The optimized aging time was concluded to be a key parameter for the formation of single-phase nanostructures in this p-type skutterudite system. The optimized condition was effective in reducing the bipolar effect at high temperature ranges by increasing the carrier concentration in the p-type system. To confirm the conclusions, the electrical conductivity, Seebeck coefficient, and power factor were measured. The results matched well with the microstructure and with those of an XRD analysis performed for the system.

The Parallel Operation of Single Phase PWM Rectifier using IGBT (IGBT를 이용한 단산 PWM정류기 병렬운전)

  • 이현원;장성영;김연준;이광주;김남해
    • Proceedings of the KIPE Conference
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    • 1999.07a
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    • pp.122-125
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    • 1999
  • The AC-to-DC single-phase PWM rectifier for traction applications using high power semiconductor, IGCT is made and tested. Parallel operation of two PWM converter is adopted for increasing capacity of converters. For reducing harmonics, the harmonic content is eliminated by the phase shift between two converters switching phase. The output voltage control is achieved by interns calculation without detecting the input current. The part of PLL used for controlling power factor is simply implemented by software.

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Analysis of Multi Level Current Source GTO Inverter for Induction Motor Drives

  • Arase, Takayuki;Matususe, Kouki
    • Proceedings of the KIPE Conference
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    • 1998.10a
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    • pp.535-540
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    • 1998
  • This paper discusses a triple stage current source GTO inverter system for high power motor drives. The energy rebound circuit of the triple stage inverter not only controls the spike voltage of the GTO inverter but also facilitates PWM control of the thyristor rectifier operated at unity fundamental input power factor. Based on Pspice simulation and experiments, the principles and PWM pulse pattern for removing specific lower harmonics in the inverter's output current are discussed in detail.

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Optimized Design of Low Voltage High Current Ferrite Planar Inductor for 10 MHz On-chip Power Module

  • Bae, Seok;Hong, Yang-Ki;Lee, Jae-Jin;Abo, Gavin;Jalli, Jeevan;Lyle, Andrew;Han, Hong-Mei;Donohoe, Gregory W.
    • Journal of Magnetics
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    • v.13 no.2
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    • pp.37-42
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    • 2008
  • In this paper, design parameters of high Q (> 50), high current inductor for on-chip power module were optimized by 4 Xs 3 Ys DOE (Design of Experiment). Coil spacing, coil thickness, ferrite thickness, and permeability were assigned to Xs, and inductance (L) and Q factor at 10 MHz, and resonance frequency ($f_r$) were determined Ys. Effects of each X on the Ys were demonstrated and explained using known inductor theory. Multiple response optimizations were accomplished by three derived regression equations on the Ys. As a result, L of 125 nH, Q factor of 197.5, and $f_r$ of 316.3 MHz were obtained with coil space of $127\;{\mu}m$, Cu thickness of $67.8\;{\mu}m$, ferrite thickness of $130.3\;{\mu}m$, and permeability 156.5. Loss tan ${\delta}=0$ was assumed for the estimation. Accordingly, Q factor of about 60 is expected at tan ${\delta}=0.02$.

Design of Boost Converter PFC IC for Unity Power Factor Achievement (단일 역률 달성을 위한 Boost Converter용 PFC IC 설계)

  • Jeon, In-Sun;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Jo, Hyo-Mun;Lee, Jong-Hwa
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.2
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    • pp.60-67
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    • 2010
  • We designed Average Current Control PFC IC which has make the average value of boost inductor current became the shape of sine wave. Designed IC has fixed frequency of 75kHz to meet EMI standard requirement. And also RC compensation loop has been designed into the error amp and the current amp, in order that it has wide bandwidth for high speed control. And we use the oscillator which generates by square wave and triangle wave, and add to UVLO, OVP, OCP, TSD which is in order to operate stability. We simulated by using Spectre of Cadence to verify the unity power factor function and various protection circuits and fabricated in a $1{\mu}m$ High Voltage(20V) CMOS process.

A study on AC-powered LED driver IC (교류 구동 LED 드라이버 IC에 관한 연구)

  • Jeon, Eui-Seok;An, Ho-Myoung;Kim, Byungcheul
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.14 no.4
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    • pp.275-283
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    • 2021
  • In this study, a driver IC for an AC-powered LED that can be manufactured with a low voltage semiconductor process is designed and the performances of the driver IC were simulated. In order to manufacture a driver IC that operates directly at AC 220V, a semiconductor manufacturing process that satisfies a breakdown voltage of 500V or higher is required. A semiconductor manufacturing process for a high-voltage device requires a much higher manufacturing cost than a general semiconductor process for a low-voltage device. Therefore, the LED driver IC is designed in series so that it can be manufactured with semiconductor process technology that implements a low-voltage device. This makes it possible to divide and apply the voltage to each LED block even if the input voltage is high. The LED lighting circuit shows a power factor of 96% at 220V. In the pnp transistor circuit, a very high power factor of 99.7% can be obtained, and it shows a very stable operation regardless of the fluctuation of the input voltage.

Development Length of High-Strength Straight Bars (550MPa) in Nuclear Power Plant Structures (고강도철근(550MPa)의 원전구조물 적용을 위한 직선철근의 정착설계)

  • Lee, Byung Soo
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2018.11a
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    • pp.110-111
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    • 2018
  • Because of the congestion problems, the high-strength reinforcements are expected to be used in nuclear power plant structures in the near future. According to ACI 349-13, it is permitted to use the high-strength(550MPa) straight bars in design of development length, but there is no special equation for high-strength bars. In order to reflect the anchorage capacity and behavior properties of high-strength straight bars with large-diameter(43 & 57mm), it is necessary to find the modified factor or develop the new development length equation for large-size and high-strength bars.

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Design of Engineering Model Oscillator with Low Phase Noise for Ka-band Satellite Transponder (위상잡음을 개선한 Ka-band 위성 중계기용 Engineering Model 발진기의 설계)

  • 류근관;이문규;염인복;이성팔
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.1
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    • pp.74-79
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    • 2002
  • The EM(Engineering Model) VCO(Voltage Controlled Oscillator) is nonlinear designed for LO(Local Oscillator) of Ka-band satellite transponder. The microstripline coupled with dielectric resonator is implemented as a high impedance inverter to improve the phase noise, and the quality factor of resonant circuit can be transferred to active device with the enhanced loaded quality factor. The developed VCO has the oscillating tuning range of 9.7965~9.8032 GHz for the control voltage range of 0~12 V. This VCO requires the DC power of 8 V and 17 mA. The phase noise characteristics are -96.51 dBc/Hz @10 KHz and -116.5 dBc/Hz @100 KHz, respectively. And, the output power of 7.33 dBm is measured.

Boost $1\Psi$ converter of high efficiency by partial resonant switching using lossless snubber (무손실 스너버를 이용한 부분공진 스위칭에 의한 고효율 승압형 단상 컨버터)

  • 서기영;곽동걸;전중함;이현우
    • The Transactions of the Korean Institute of Power Electronics
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    • v.3 no.4
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    • pp.315-322
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    • 1998
  • Power conversion system must increase switching frequency in order to achieve small size, light weight and low noise. However, the switches of converter are subject to high switching power losses and switching stresses. As a result, the power system has a lower efficiency. In this paper, the authors propose an AC-DC boost converter of high efficiency by partial resonant switching mode. The switching devices in the proposed circuit are operated with soft switching and the control technique of those is simplified for switch to drive in constant duty cycle. The partial resonant circuit makes use of a inductor using step up and a condenser of loss-less snubber. Besides, by regenerating energy, that is charged in a loss less snubber condenser of a snubber adopted to a common circuit, toward an input source part, this circuit can get increased efficiency. as merit. The result is that the switching loss is very low, the efficiency and power factor of system is high. The proposed converter is deemed the most suitable for high power applications where the power switching devices are used.

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