• Journal of the Korean Society for Railway
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• v.14 no.5
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• pp.411-415
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• 2011

DC/DC switching power converters are commonly used to generate a regulated DC output voltages with high efficiencies from different DC input sources. The voltage mode DC/DC converter utilizes MOSFET (metal-oxide semiconductor field effect transistor), inductor, and a PWM (pulse-width modulation) controller with oscillator, amplifier, and comparator, etc. to efficiently transfer energy from the input to the output at periodic intervals. The fundamental boost converter and a buck converter containing a switched-mode power supply are studied. In this paper, the electrical characteristics of DC/DC power converters are simulated by program of SPICE, and the PWM controller is implemented to check the operation. In addition, power efficiency is analyzed based on the specification of each component.

• Journal of Power System Engineering
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• v.4 no.1
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• pp.45-50
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• 2000

Circuit breakers have traditionally employed mechanical methods to interrupt excessive currents. According to power semiconductor technology advances in power electronic device, some mechanical breakers are replaced with solid state equivalents. Advantages of the contactors using semiconductor devices include faster fault interrupting, fault current limiting, no arc to contain or extinguish and intelligent power control, and high reliability. This paper describes the design of a static $100{\pm}10%V$ and 0 to 50A DC self-protected contactor with 85A "magnetic tripping" and 100A interruption current at $2.2A/{\mu}s$ short circuit of load condition using a new power device the HARRIS MCT (600V-75A). The self-protection circuit of this system is designed by the classical ZnO varistor for energy absorption and turn-off snubber circuit ("C" or "RCD") of the MCT.

• Transactions on Semiconductor Engineering
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• v.2 no.3
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• pp.6-12
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• 2024

This paper presents a study on a 2.4GHz differential cascode power amplifier(PA) fabricated using a 130nm CMOS process. This PA is designed for wireless power transmission applications and consists of two differential stages with custom-designed balun transformers for single-ended output. Balun transformers are utilized not only for the output stage but also for power match-ing between each stage. Additionally, a bias circuit with temperature compensation capability is added to maintain stable bias voltage in the 2.4GHz frequency band. As a result, it achieves an output power of 21.75 dBm with a power-added efficiency(PAE) of 40.9% at TT/40℃.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.4
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• pp.490-494
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• 2014

In this paper, a design of high-speed power-off circuit and analysis. The incidence of high-dose transient radiation into the silicon-based semiconductor element induces the photocurrent due to the creation of electron-hole pairs, which causes the upset phenomenon of active elements or triggers the parasitic thyristor in the element, resulting in latch-up. High speed power-off circuit was designed to prevent burn-out of electronic device caused by Latch-up. The proposed high speed power-off circuit was configured with the darlington transistor and photocoupler so that the power was interrupted and recovered without the need for an additional circuit, in order to improve the existing problem of SCR off when using the thyristor. The discharge speed of the high speed power interruption circuit was measured to be 19 ${\mu}s$ with 10 ${\mu}F$ and 500 ${\Omega}$ load, which was 98% shorter than before (12.8 ms).

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.246-247
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• 2010

This paper deals with the water treatment of the leachate from sewage filled ground by a pulsed power technology. Leachate from sewage filled ground should be treated below regulation level of COD in order to prevent environmental pollution and usually treated by a chemical method. Among the pollutants mixed in the leachate, chemical compounds of benzene series are known to be difficult to break down, and need to use high cost treat methods. The treatment of the benzene compounds by high power pulsed power supply was studied. For the high-rate, cost-effective treatment of leachate, pulsed power supply should have high repetition rates and require switching devices of long lifetime. In order to meet the demands of the above condition, pulsed power generator based on semiconductor switches using IGBTs as primary switches were developed. The experimental results verified that benzene compounds can be treated effectively by high voltage electric pulses, and this fact indicates that the treatment method by pulsed power source is a promising substitute.

• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.1995-2003
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• 2014

Power semiconductor devices have been the major backbone for high-power electronic devices. One of important parameters in view of power semiconductor devices often characterize with a high breakdown voltage. Therefore, many efforts have been made, since the development of the Insulated Gate Bipolar Transistor (IGBT), toward having higher level of breakdown voltage, whereby the typical design thereof is focused on the structure using the field ring. In this study, in an attempt to make up more optimized field-ring structure, the characteristics of the field ring were investigated with the use of theoretical arithmetic model and methodologically the design of experiments (DOE). In addition, the IGBT having the field-ring structure was designed via simulation based on the finding from the above, the result of which was also analyzed. Lastly, the current study described the trench field-ring structure taking advantages of trench-etching process having the improved field-ring structure, not as simple as the conventional one. As a result of the simulation, it was found that the improved trench field-ring structure leads to more desirable voltage divider than relying on the conventional field-ring structure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1064-1073
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• 2013

In this paper, a compact 370 W high efficiency GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) power amplifier(PA) using internal harmonic manipulation circuits is presented for cellular and L-band. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd harmonic frequency. In order to minimize package size, new 41.8 mm GaN HEMT and two MOS(Metal Oxide Semiconductor) capacitors are internally matched and combined package size $10.16{\times}10.16{\times}1.5Tmm^3$ through package material changes and wire bonded in a new package to improve thermal resistance. When drain biased at 48 V, the developed GaN HEMT power amplifier has achieved over 80 % Drain Efficiency(DE) from 770~870 MHz and 75 % DE at 1,805~1,880 MHz with 370 W peak output power(Psat.). This is the state-of-the-art efficiency and output power of GaN HEMT power amplifier at cellular and L-band to the best of our knowledge.

• Nuclear Engineering and Technology
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• v.51 no.2
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• pp.439-443
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• 2019

To improve the noise characteristics, software-based noise reduction algorithms are widely used in cadmium zinc telluride (CZT) pixelated semiconductor gamma camera system. The purpose of this study was to develop an improved median filtering algorithm using a thresholding method for noise reduction in a CZT pixelated semiconductor gamma camera system. The gamma camera system simulated is a CZT pixelated semiconductor detector with a pixel-matched parallel-hole collimator and the spatial resolution phatnom was designed with the Geant4 Application for Tomography Emission (GATE). In addition, a noise reduction algorithm with a median filter using an improved thresholding method is developed and we applied our proposed algorithm to an acquired spatial resolution phantom image. According to the results, the proposed median filter improved the noise characteristics compared to a conventional median filter. In particular, the average for normalized noise power spectrum, contrast to noise ratio, and coefficient of variation results using the proposed median filter were 10, 1.11, and 1.19 times better than results using conventional median filter, respectively. In conclusion, our results show that the proposed median filter using improved the thresholding method results in high imaging performance when applied in a CZT semiconductor gamma camera system.

• Journal of Power Electronics
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• v.16 no.3
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• pp.905-914
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• 2016

A high-performance rectifier is introduced in this study. The proposed rectifier combines the conventional pulse width modulation, soft commutation, and instantaneously average line current control techniques to promote circuit performance. The voltage stresses of the main switches in the rectifier are lower than those in conventional rectifier topologies. Moreover, conduction losses of switches in the rectifier are certainly lower than those in conventional rectifier topologies because the power current flow path when the main switches are turned on includes two main power semiconductors and the power current flow path when the main switches are turned off includes one main power semiconductor. The rectifier also adopts a ZCS-PWM auxiliary circuit to derive the ZCS function for power semiconductors. Thus, the problem of switching losses and EMI can be improved. In the control strategy, the controller uses the average current control mode to achieve fixed-frequency current control with stability and low distortion. A prototype has been implemented in the laboratory to verify circuit theory.

• Electronics and Telecommunications Trends
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• v.38 no.1
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• pp.36-45
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• 2023

The increasing demand for ultra-high efficiency of compact power conversion systems for electric vehicle applications has brought GaN power semiconductors to the fore due to their low conduction losses and fast switching speed. In particular, the development of materials and core device processes contributed to remarkable results regarding the publication of vertical GaN power devices with high breakdown voltage. This paper reviews recent advances on GaN material technology and vertical GaN power device technology. The GaN material technology covers the latest technological trends and GaN epitaxial growth technology, while the vertical GaN power device technology examines diodes, Trench FETs, JFETs, and FinFETs and reviews the vertical GaN PiN diode technology developed by ETRI.