• 반도체디스플레이기술학회지
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• 제19권4호
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• pp.99-104
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• 2020

In this paper, efficiency and loss characteristics of GaN FET were reported by applying it into the QR flyback converter. In particular, for the comparison of efficiency characteristics, QR flyback converter experimental circuits with Si FET and with GaN FET were separately produced in 12W class. As a result of the experiment, the experimental circuit of the QR flyback converter using GaN FET reached a high efficiency of 90% or more when the load power was 2W or more, and the maximum efficiency was observed to be about 92%, and the maximum loss power was about 1.1W. Meanwhile, the efficiency of the experimental circuit with Si FET increased as the input voltage increased, and the maximum efficiency was observed to be about 82% when the load power was 9W or higher, and the maximum loss power was about 2.8W. From the results, it is estimated that that in the case of the experimental circuit applying the GaN FET switch, the power conversion efficiency was improved as the switching loss and conduction loss due to on-resistance were reduced, and the internal loss due to the synchronous rectifier was minimized. Consequently, it is concluded that the GaN FET is suitable for under 20W class power supply unit as a high efficiency power switch.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.463-466
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• 2000

According to the development of the semiconductor micro device technology, IC chip trends the high integrated, low power tendency. Nowadays, it can be showed the tendency of single chip in system level. But in the system level, IC operates by multi power supply voltages. So, semiconductor process is necessary for these multi power operation. Therefore, in this paper, dual gate high voltage device that operate by multi power supply of 5V and 20V fabricated in the 0.5${\mu}{\textrm}{m}$ CMOS process technology and its electrical characteristics were analyzed. The result showed that the characteristics of the 5V device almost met with the SPICE simulation, the SPICE parameters are the same as the single 5V device process. And the characteristics of 20V device showed that gate length 3um device was available without degradation. Its current was 520uA/um, 350uA/um for NMOS, PMOS and the breakdown voltages were 25V, 28V.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.760-767
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• 2014

This paper describes a high-radix crossbar switch design with low latency and power dissipation for Network-on-Chip (NoC) applications. The reduction in latency and power is achieved by employing a folded-clos topology, implementing the switch organized as three stages of low-radix switches connected in cascade. In addition, to facilitate the uniform placement of wires among the sub-switch stages, this paper proposes a Mux-Matrix-Mux structure, which implements the first and third switch stages as multiplexer-based crossbars and the second stage as a matrix-type crossbar. The proposed 256-radix, 8-bit crossbar switch designed in a 65nm CMOS has the simulated power dissipation of 1.92-W and worst-case propagation delay of 0.991-ns while operating at 1.2-V supply and 500-MHz frequency. Compared with the state-of-the-art designs in literature, the proposed crossbar switch achieves the best energy-delay-area efficiency of $0.73-fJ/cycle{\cdot}ns{\cdot}{\lambda}^2$.

• 전력전자학회논문지
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• 제15권4호
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• pp.274-281
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• 2010

본 논문에서는 반도체 플라즈마 식각 시스템의 균일도 향상을 위한 CCP와 ICP 결합 임피던스정합 장치를 제안한다. 이중주파수 전원공급 장치는 CCP와 ICP로 구성되어 있고 첫 번째 구성은 고집적화를 위해 페라이트 코어를 사용한 유도 결합 플라즈마(ICP : Inductively Coupled Plasma)방식이며, 두 번째 구성은 셀 전체의 균일도 향상을 위한 용량 결합 플라즈마(CCP : Capacitively Coupled Plasma)방식이다. 제안된 시스템은 반도체 장비 산업에서 요구되는 높은 생산성을 실현할 수 있다. 본 논문에서는 제안된 시스템의 타당성을 검증하기 위해 CCP와 ICP 결합 임피던스정합 장치를 제작하였고, 이론적 분석과 27.12MHz 와 400kHz의 조건에서 시뮬레이션 및 실험을 진행하였다

• 전기전자학회논문지
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• 제27권4호
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• pp.630-635
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• 2023

SiC는 고온, 고전압을 비롯한 악조건에서의 내성이 기존 산업분야의 대다수를 점유하고 있는 Silicon에 비해 우수하여 전력반도체 분야에서 Silicon의 위치를 대체하여 가고 있다. 본 논문은 전력 반도체 소자 중 하나인 4H-SiC Planar MOSFET에 알루미늄으로 Gate를 형성하여 다결정 Si 게이트와 대비, 파라미터 값들이 일관성을 갖도록 하였으며, SiC MOSFET의 채널 도핑 농도에 변화를 주어 문턱전압과 항복전압, IV 특성을 연구하였다.

• 반도체디스플레이기술학회지
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• 제3권2호
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• pp.17-21
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• 2004

Aluminum nitride(AlN) thin films were deposited on silicon substrate by reactive RF magnetron sputtering without substrate heating. We investigated the dependence of some properties for AlN thin film on sputtering conditions such as working pressure, $N_2$ concentration and RF power. XRD, Ellipsometer and AES has been measured to find out structural properties and preferred orientation of AlN thin films. Deposition rate of AlN thin film was increased with an increase of RF power and decreased with an increase of $N_2$ concentration. AES in-depth measurements showed that stoichiometry of Aluminium and Nitrogen elements were not affected by $N_2$ concentration. It has shown that low working pressure, low $N_2$ concentration and high RF power should be maintained to deposit AlN thin film with a high degree of (0002) preferred orientation.

• Journal of Power Electronics
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• 제14권5호
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• pp.899-907
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• 2014

This paper proposes a single-phase bidirectional AC/DC converter topology applied in V2G systems, which consists of an inverter and a bidirectional non-inverting buck-boost converter. This topology can operate in four modes: buck charging, boost charging, buck discharging and boost discharging with high input current quality and unity input power factor. The inverter switches at line frequency, which is different from conventional voltage source inverters. A bidirectional buck-boost converter is utilized to adapt to a wider charging voltage range. The modulation and control strategy is introduced in detail, and the switching patterns are optimized to reduce the current ripple. In addition, the semiconductor losses are analyzed. Simulation and experimental results demonstrate the validity and effectiveness of the proposed topology.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2013년도 전력전자학술대회 논문집
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• pp.347-349
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• 2013

This paper describes analysis and calculation of line frequency ripple current according to output capacitor value and effects of LED connection in the single stage flyback converter with high power factor. The low frequency output ripple current delivered from single stage converter has been analyzed in detail and the method evaluating parasitic resistance included in LED has been provided. In order to verify the equation derived in this paper, the single stage flyback converter has been designed with constant output current regulation with DCM operation. Experiments were conducted with different LED load structures to analyze the effect of LED parasitic resistance on output ripple current. As test results, the calculation can provide guide line to select capacitor values depending on output ripple current and LED characteristics.

• 반도체디스플레이기술학회지
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• 제17권3호
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• pp.95-99
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• 2018

In this study, take a look at natural disasters and technical characteristics such as frequency, bandwidth, transmission power, and service coverage of mobile communication and terrestrial broadcasting are compared as a means to provide disaster warning service in case of natural disaster, which is increasing in recent years. In the event of a disaster, mobile communication systems that take high frequency bands, low power transmission and narrow coverage can be disabled, but terrestrial broadcasting, which uses VHF and UHF with good frequency characteristics and high transmission power and wide service coverage provides stable services. As result terrestrial broadcast is useful as emergency warning or information in case of disaster.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.361-365
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• 2019

Although there is no strict definition of a power semiconductor device, a general description is a semiconductor that has capability to control more than 1 W of electricity. Integrated gate bipolar transistors (IGBTs), which are power semiconductors, are widely used in voltage ranges above 300 V and are especially popular in high-efficiency, high-speed power systems. In this paper, the size of the gate was adjusted to test the variation in the yield voltage characteristics by measuring the electric field concentration under the trench gate. After the experiment Synopsys' TCAD was used to analyze the efficiency of threshold voltage, on-state voltage drop, and breakdown voltage by measuring the P- region and its size under the gate.