• Title/Summary/Keyword: High Energy Photon

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The Influence of Air Cavity on Interface Doses for Photon Beams (X선치료 조사야 내 공동의 존재에 따른 선량분포의 측정)

  • Chung Se Young;Kim Young Bum;Kwon Young Ho;Kim You Hyun
    • The Journal of Korean Society for Radiation Therapy
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    • v.10 no.1
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    • pp.69-77
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    • 1998
  • When a high energy photon beam is used to treat lesions located in the upper respiratory air passages or in maxillary sinus, the beams often must traverse an air cavity before it reaches the lesion. Because of this traversal of air, it is not clear that the surface layers of the lesion forming the air-tumor tissue interface will be in a state of near electronic equilibrium; if they are not, underdosing of these layers could result. Although dose corrections at large distances beyond an air cavity are accountable by attenuation differences, perturbations at air-tissue interfaces are complex to measure or calculate. This problem has been investigated for 4MV and 10MV X-ray beams which are becoming widely available for radiotherapy with linear accelerator. Markus chamber was used for measurement with variouse air cavity geometries in X-ray beams. Underdosing effects occur at both the distal and proximal air cavity interface. The magnitude depended on geometry, energy, field sizes and distance from the air-tissue interfaces. As the cavity thickness increased, the central axis dose at the distal interface decreased. Increasing field size remedied the underdosing, as did the introduction of lateral walls. Fellowing a $20{\times}2{\times}2\;cm^3$\;air\;cavity,\;4{\times}4\;cm\;field\;there\;was\;an\;11.5\%\;and\;13\%\;underdose\;at\;the\;distal\;interface,\;while\;a\;20{\times}20{\times}2\;cm^3\;air\;cavity\;yielded\;a\;24\%\;and\;29\%$ loss for the 4MV and 10MV beams, respectively. The losses were slightly larger for the 10MV beams. The measurements reported here can be used to guide the development of new calculation models under non-equilibrium conditions. This situation is of clinical concern when lesions such as larynx and maxillary carcinoma beyond air cavities are irradiated.

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Hall-effect properties of single crystal semiconductor P-GaSe dopes with $Er^{3+}$ (Erbium 도핑된 p-GaSe 단결정의 홀 효과 특성)

  • Lee, Woo-Sun;Oh, Guem-Kon;Chung, Young-Ho;Jung, Chang-Soo;Son, Kyeong-Choon;Kim, Nam-Oh
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.726-728
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    • 1998
  • Optical and electrical properties of GaSe:$Er^{3+}$ single crystals grown by the Bridgeman technique was been investigated by using optical absorption and Hall-effect measurements. The Hall coefficients were measured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. carrier density($N_H$) of GaSe doped with Erbium was measured about $3.25{\times}10^{16}\;[cm^{-3}}$ at temperature 300K, which was high than undoped specimen. Photon energy gap ($E_{gd}$) was measured about 1.7geV.

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Carbon Ion Therapy: A Review of an Advanced Technology

  • Kim, Jung-in;Park, Jong Min;Wu, Hong-Gyun
    • Progress in Medical Physics
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    • v.31 no.3
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    • pp.71-80
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    • 2020
  • This paper provides a brief review of the advanced technologies for carbon ion radiotherapy (CIRT), with a focus on current developments. Compared to photon beam therapy, treatment using heavy ions, especially a carbon beam, has potential advantages due to its physical and biological properties. Carbon ion beams with high linear energy transfer demonstrate high relative biological effectiveness in cell killing, particularly at the Bragg peak. With these unique properties, CIRT allows for accurate targeting and dose escalation for tumors with better sparing of adjacent normal tissues. Recently, the available CIRT technologies included fast pencil beam scanning, superconducting rotating gantry, respiratory motion management, and accurate beam modeling for the treatment planning system. These techniques provide precise treatment, operational efficiency, and patient comfort. Currently, there are 12 CIRT facilities worldwide; with technological improvements, they continue to grow in number. Ongoing technological developments include the use of multiple ion beams, effective beam delivery, accurate biological modeling, and downsizing the facility.

Photoemission Electron Micro-spectroscopic Study of the Conductive Layer of a CVD Diamond (001)$2{\times}1$ Surface

  • Kono, S.;Saitou, T.;Kawata, H.;Goto, T.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.7-8
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    • 2010
  • The surface conductive layer (SCL) of chemical vapor deposition (CVD) diamonds has attracting much interest. However, neither photoemission electron microscopic (PEEM) nor micro-spectroscopic (PEEMS) information is available so far. Since SCL retains in an ultra-high vacuum (UHV) condition, PEEM or PEEMS study will give an insight of SCL, which is the subject of the present study. The sample was made on a Ib-type HTHP diamond (001) substrate by non-doping CVD growthin a DC-plasma deposition chamber. The SCL properties of the sample in air were; a few tens K/Sq. in sheet resistance, ${\sim}180\;cm^2/vs$ in Hall mobility, ${\sim}2{\times}10^{12}/cm^2$ in carrier concentration. The root-square-mean surface roughness (Rq) of the sample was ~0.2nm as checked by AFM. A $2{\times}1$ LEED pattern and a sheet resistance of several hundreds K/Sq. in UHV were checked in a UHV chamber with an in-situ resist-meter [1]. The sample was then installed in a commercial PEEM/S apparatus (Omicron FOCUS IS-PEEM) which was composed of electro-static-lens optics together with an electron energy-analyzer. The presence of SCL was regularly monitored by measuring resistance between two electrodes (colloidal graphite) pasted on the two ends of sample surface. Figure 1 shows two PEEM images of a same area of the sample; a) is excited with a Hg-lamp and b) with a Xe-lamp. The maximum photon energy of the Hg-lamp is ~4.9 eV which is smaller that the band gap energy ($E_G=5.5\;eV$) of diamond and the maximum photon energy of the Xe-lamp is ~6.2 eV which is larger than $E_G$. The image that appear with the Hg-lamp can be due to photo-excitation to unoccupied states of the hydrogen-terminated negative electron affinity (NEA) diamond surface [2]. Secondary electron energy distribution of the white background of Figs.1a) and b) indeed shows that the whole surface is NEA except a large black dot on the upper center. However, Figs.1a) and 1b) show several features that are qualitatively different from each other. Some of the differences are the followings: the two main dark lines A and B in Fig.1b) are not at all obvious and the white lines B and C in Fig.1b) appear to be dark lines in Fig.1a). A PEEMS analysis of secondary electron energy distribution showed that all of the features A-D have negative electron affinity with marginal differences among them. These differences can be attributed to differences in the details of energy band bending underneath the surface present in SCL [3].

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High Energy Photon Dosimetry by ESR Spectroscopy in Radiotherapy (ESR Spectroscopy에 의한 치료용 고에너지 광자선의 선량측정)

  • Chu, Sung-Sil
    • Progress in Medical Physics
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    • v.1 no.1
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    • pp.31-42
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    • 1990
  • The finding of long lived free radicals produced by ionizing radiation in organic crystals and the quantification of this effect by electron spin resonance(ESR) spactroscopy has proven excellent dosimetric applicability. The tissue equivalent alanine dosimeter also appear appropriate for radiation therapy level dosimetry. The dose measurement was performed in a Rando phantom using high energy photons as produced by high energy medical linear accelerator and cobalt-60 teletherapy unit. The absorbed dose range of the ESR/alanine dosimetry system could be extended down to 0.1 Gy. The response of the alanine dosimeters was determined for photons at different therapeutic dose levels from less than 0.1 Gy to 100 Gy and the depth dose measurements were carried out for photon energies of 1.25MeV, 6 and 10 MV with alanine dosimeters in Rando phantom. Comparisons between ESR/alanine in a Rando phantom and ion chamber in a water phantom were made performing depth dose measurements to examine the agreement of both methods under field conditions.

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RECENT PROGRESS ON LASER DRIVEN ACCELERATORS AND APPLICATIONS

  • LEEMANS W. P.;ESAREY E.;GEDDES C.G.R.;SCHROEDER C. B.;TOTH CS.
    • Nuclear Engineering and Technology
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    • v.37 no.5
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    • pp.447-456
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    • 2005
  • Laser driven accelerators promise to provide an alternative to conventional accelerator technology. They rely on the excitation of large amplitude density waves in a plasma by the photon pressure of an intense laser. The density oscillations in which electrons and ions are separated, result in extremely large longitudinal electric fields that can be several orders of magnitude larger than those that are used in today's radio-frequency accelerators. Whereas this principle had been demonstrated experimentally for nearly two decades, it was not until 2004 that the production of high quality electron beams around 100 MeV was demonstrated. Analysis, aided by particle-in-cell simulations, as well as experiments with various plasma lengths and densities, indicate that tailoring the length of the accelerator, together with loading of the accelerating structure with beam, are the keys to production of mono-energetic electron beams. Increasing the energy towards a GeV and beyond will require reducing the plasma density and design criteria are discussed for an optimized accelerator module. The current progress and future directions are summarized through comparison with conventional accelerators, highlighting the unique short and long term prospects for intense radiation sources and high energy accelerators based on laser-drivenplasma accelerators.

Radiation protective qualities of some selected lead and bismuth salts in the wide gamma energy region

  • Sayyed, M.I.;Akman, F.;Kacal, M.R.;Kumar, A.
    • Nuclear Engineering and Technology
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    • v.51 no.3
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    • pp.860-866
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    • 2019
  • The lead element or its salts are good radiation shielding materials. However, their toxic effects are high. Due to less toxicity of bismuth salts, the radiation shielding properties of the bismuth salts have been investigated and compared to that of lead salts to establish them as a better alternative to radiation shielding material to the lead element or its salts. The transmission geometry was utilized to measure the mass attenuation coefficient (${\mu}/{\rho}$) of different salts containing lead and bismuth using a high-resolution HPGe detector and different energies (between 81 and 1333 keV) emitted from point sources of $^{133}Ba$, $^{57}Co$, $^{22}Na$, $^{54}Mn$, $^{137}Cs$, and $^{60}Co$. The experimental ${\mu}/{\rho}$ results are compared with the theoretical values obtained through WinXCOM program. The theoretical calculations are in good agreement with their experimental ones. The radiation protection efficiencies, mean free paths, effective atomic numbers and electron densities for the present compounds were determined. The bismuth fluoride ($BiF_3$) is found to have maximum radiation protection efficiency among the selected salts. The results showed that present salts are more effective for reducing the intensity of gamma photons at low energy region.

Active Materials for Energy Conversion and Storage Applications of ALD

  • Sin, Hyeon-Jeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.75.2-75.2
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    • 2013
  • Atomic layer deposition (ALD), utilizing self-limiting surface reactions, could offer promising perspectives for future efficient energy conversion devices. The capabilities of ALD for surface/interface modification and construction of novel architectures with sub-nanometer precision and exceptional conformality over high aspect ratio make it more valuable than any other deposition methods in nanoscale science and technology. In the context, a variety of researches on fabrication of active materials for energy conversion applications by ALD are emerging. Among those materials, one-dimensional nanotubular titanium dioxide, providing not only high specific surface area but also efficient carrier transport pathway, is a class of the most intensively explored materials for energy conversion systems, such as photovoltaic cells and photo/electrochemical devices. The monodisperse, stoichiometric, anatase, TiO2 nanotubes with smooth surface morphology and controlled wall thickness were fabricated via low-temperature template-directed ALD followed by subsequent annealing. The ALD-grown, anatase, TiO2 nanotubes in alumina template show unusual crystal growth behavior which allows to form remarkably large grains along axial direction over certain wall thickness. We also fabricated dye-sensitized solar cells (DSCs) introducing our anatase TiO2 nanotubes as photoanodes, and studied the effect of blocking layer, TiO2 thin films formed by ALD, on overall device efficiency. The photon convertsion efficiency ~7% were measured for our TiO2 nanotubebased DSCs with blocking layers, which is ~1% higher than ones without blocking layer. We also performed open circuit voltage decay measurement to estimate recombination rate in our cells, which is 3 times longer than conventional nanoparticulate photoanodes. The high efficiency of our ALD-grown, anatase, TiO2 nanotube-based DSCs may be attributed to both enhanced charge transport property of our TiO2 nanotubes photoanode and the suppression of recombination at the interface between transparent conducting electrode and iodine electrolytes by blocking layer.

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Analysis of Wide-gap Semiconductors with Superconducting XAFS Apparatus

  • Shiki, S.;Zen, N.;Matsubayashi, N.;Koike, M.;Ukibe, M.;Kitajima, Y.;Nagamachi, S.;Ohkubo, M.
    • Progress in Superconductivity
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    • v.14 no.2
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    • pp.99-101
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    • 2012
  • Fluorescent yield X-ray absorption fine structure (XAFS) spectroscopy is useful for analyzing local structure of specific elements in matrices. We developed an XAFS apparatus with a 100-pixel superconducting tunnel junction (STJ) detector array with a high sensitivity and a high resolution for light-element dopants in wide-gap semiconductors. An STJ detector has a pixel size of $100{\mu}m$ square, and an asymmetric layer structure of Nb(300 nm)-Al(70 nm)/AlOx/Al(70 nm)-Nb(50 nm). The 100-pixel STJ array has an effective area of $1mm^2$. The XAFS apparatus with the STJ array detector was installed in BL-11A of High Energy Accelerator Research Organization, Photon Factory (KEK PF). Fluorescent X-ray spectrum for boron nitride showed that the average energy resolution of the 100-pixels is 12 eV in full width half maximum for the N-K line, and The C-K and N-K lines are separated without peak tail overlap. We analyzed the N dopant atoms implanted into 4H-SiC substrates at a dose of 300 ppm in a 200 nm-thick surface layer. From a comparison between measured X-ray Absorption Near Edge Structure (XANES) spectra and ab initio FEFF calculations, it has been revealed that the N atoms substitute for the C site of the SiC lattice.

Measurements and comparisons of PDDs using ion chamber and fiber-optic dosimeter irradiated by high energy photon beam (고 에너지 X-선 조사에 의한 광섬유 방사선량계와 이온 전리함의 심부선량 백분율 측정 및 비교)

  • Cho, Dong-Hyun;Jang, Kyoung-Won;Yoo, Wook-Jae;Seo, Jeong-Ki;Heo, Ji-Yeon;Lee, Bong-Soo;Cho, Young-Ho;Moon, Joo-Hyun;Park, Byung-Gi
    • Journal of Sensor Science and Technology
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    • v.18 no.2
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    • pp.173-178
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    • 2009
  • In this study, we have fabricated a fiber-optic dosimeter using an organic scintillator and a plastic optical fiber for measuring percentage depth dose with high energy X-ray beam. The scintillating light generated in organic sensor probe embedded in a solid water are guided by 20 m plastic optical fiber to the light-measuring device such as a photodiode- amplifier system. Using a fiber-optic dosimeter and an ion chamber, percentage depth dose curves are measured with 6 and 15 MV energies of X-ray beam whose field sizes are $2\;cm\;{\times}\;2\;cm$ and $10\;cm\;{\times}\;10\;cm$.