• 전자공학회논문지
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• 제51권6호
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• pp.71-77
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• 2014

본 연구에서는 radio frequency(rf) 마그네트론 스퍼터링 기술을 이용하여 Corning 유리 기판에 증착된 InGaZnO (IGZO) 박막의 광 투과도 특성에 고 에너지 전자빔 조사(high-energy electron beam irradiation (HEEBI))이 미치는 영향을 연구하였다. 저온에서 증착된 IGZO 박막은 공기 중 과 상온 조건에서 0.8 MeV의 전자빔 에너지와 $1{\times}10^{14}-1{\times}10^{16}electrons/cm^2$ dose를 사용하여 HEEBI 처리 되었다. IGZO 박막의 광 투과도는 utraviolet visible near-infrared spectrophotometer (UVVIS)로 측정되었다. HEEBI 처리 된 IGZO/유리 이중층의 총 광 투과도에서 HEEBI 처리된 IGZO 단일막 만의 광 투과도를 분리하는 방법을 상세히 연구하였다. 실험 결과로부터 $1{\times}10^{14}electrons/cm^2$의 적절한 dose로 처리된 HEEBI가 IGZO 박막의 투명도를 극대화시킴을 알 수 있었다. 또한 이렇게 적절한 dose로 처리된 HEEBI가 광학 밴드갭($E_g$)을 3.38 eV에서 3.31 eV로 감소시킴을 알 수 있었다. 이러한 $E_g$의 감소는 적절한 dose로 공기 중 상온에서 처리된 HEEBI가 진공 중 고온에서 처리된 열적 annealing 효과와 유사함을 제시하고 있다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.179-182
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• 2006

The effect of electron beam irradiation on dye sensitized solar cell (DSSC) has been studied to examine degradation of DSSC. The high-energy electron beam irradiation affects on the materials and performance of dye sensitized solar cells. We have checked the effects of electron beam irradiation of $TiO_2$ substrate with and without dye adsorption on the photovoltaic performances of resulting DSSCS and also studied the structural and electrical properties of polymers after irradiation. All solar cells materials were irradiated by electron beams with an energy source of 2MeV at different dose rates of 60 kGy, 120 kGy 240 kGy and 900 kGy and then their photoelectrical parameters were measured at 1 sun $(100 mW/cm^2)$. It was shown that the efficiency of DSSC was decreased as increasing the dose of e-beam irradiation due to lowering in $TiO_2$ crystallinity, decomposition of dye and oxidation of FTO glasses. On the other hand, the performance of solid-state DSSC with polyethylene oxide based electrolyte was improved after irradiation of e-beam due to enhancement of its conductivity and breakage of crosslinking.

• 센서학회지
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• 제15권3호
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• pp.186-191
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• 2006

In general, Cerenkov light is produced by a charged particle that passes through a medium with a velocity greater than that of visible light. Although the wavelength of Cerenkov light is very broad, the peak is in the almost visible range from 400 to 480 nm. Therefore, it always causes a problem to detect a real light signal that is generated in the scintillator on the fiber-optic sensor tip for dose measurements of high-energy electron beam. The objectives of this study are to measure, characterize and remove Cerenkov light generated in a fiber-optic radiation sensor tip to detect a real light signal from the scintillator. In this study, the intensity of Cerenkov light is measured and characterized as a function of incident angle of electron beam from a LINAC, and as a function of the energy of electron beam. As a measuring device, a photodiode-amplifier system is used, and a subtraction method using a background optical fiber is investigated to remove Cerenkov light.

• 대한방사선기술학회지:방사선기술과학
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• 제25권1호
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• pp.83-88
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• 2002

This work was peformed as a basic research in the application of Monte Carlo methods for planning treatments by electron beams. Depth doses, beam profiles and isodose curves in water phantoms were calculated for monoenergetic electron beams with 6, 9, and 12 MeV. The calculated depth doses and beam profiles are almost consistent with their known values. If allowances are made for distributions in electron beam energies, we are confident that the agreement between our calculations and measured values will significantly improve. In conclusion, our work shows that similar Monte Carlo calculations could be applied for geometries In human body in planning electron beam treatments.

• 한국의학물리학회지:의학물리
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• 제34권3호
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• pp.33-39
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• 2023

Purpose: FLASH radiotherapy (RT) using ultra-high dose rate (>40 Gy/s) radiation is being studied worldwide. However, experimental studies such as preclinical studies using small animals are difficult to perform due to the limited availability of irradiation devices and methods for generating a FLASH beam. In this paper, we report the initial dosimetry results of a prototype electron linear accelerator (LINAC)-based irradiation system to perform ultra-high dose rate (UHDR) preclinical experiments. Methods: The present study used the prototype electron LINAC developed by the Research Center of Dongnam Institute of Radiological and Medical Sciences (DIRAMS) in Korea. We investigated the beam current dependence of the depth dose to determine the optimal beam current for preclinical experiments. The dose rate in the UHDR region was measured by film dosimetry. Results: Depth dose measurements showed that the optimal beam current for preclinical experiments was approximately 33 mA, corresponding to a mean energy of 4.4 MeV. Additionally, the average dose rates of 80.4 Gy/s and 162.0 Gy/s at a source-to-phantom surface distance of 30 cm were obtained at pulse repetition frequencies of 100 Hz and 200 Hz, respectively. The dose per pulse and instantaneous dose rate were estimated to be approximately 0.80 Gy and 3.8×10⁵ Gy/s, respectively. Conclusions: Film dosimetry verified the appropriate dose rates to perform FLASH RT preclinical studies using the developed electron-beam irradiator. However, further research on the development of innovative beam monitoring systems and stabilization of the accelerator beam is required.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.487-487
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• 2011

Recently graphene has emerged as a fascinating 2D system in condensed-matter physics as well as a new material for the development of nanotechnology. The unusual electronic band structure of graphene allows it to exhibit a strong ambipolar electric field effect with high mobility. These properties lead to the possibility of its application in high-performance transparent conducting films (TCFs). Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ${\sim}60{\Omega}$/sq and ~85 % transmittance in the visible range (400?900 nm), the CVD-grown graphene electrodes have a higher/flatter transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. Here, we report an ingenious strategy, irradiation of MeV electron beam (e-beam) at room temperature under ambient condition, for obtaining size-homogeneous gold nanoparticle decorated on graphene. The nano-particlization promoted by MeV e-beam irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping, and energy dispersive X-ray spectroscopy. These results clearly revealed that gold nanoparticle with 10 ~ 15 nm in mean size were decorated along the surface of the graphene after 1.5 MeV-e-beam irradiation. A chemical transformation and charge transfer for the metal gold nanoparticle were systematically explored by X-ray photoelectron spectroscopy and Raman spectroscopy. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

• 대한금속재료학회지
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• 제46권10호
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• pp.634-645
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• 2008

In this study, surface composites were fabricated with Fe-based amorphous alloy powders and VC powders by high-energy electron beam irradiation, and the correlation of their microstructure with hardness and fracture toughness was investigated. Mixture of Fe-based metamorphic powders and VC powders were deposited on a plain carbon steel substrate, and then electron beam was irradiated on these powders without flux to fabricate surface composites. The composite layers of 1.3~1.8 mm in thickness were homogeneously formed without defects and contained a large amount (up to 47 vol.%) of hard $Cr_2B$ and $V_8C_7$ crystalline particles precipitated in the solidification cell region and austenite matrix, respectively. The hardness of the surface composites was directly influenced by hard $Cr_2B$ and $V_8C_7$ particles, and thus was about 2 to 4 times greater than that of the steel substrate. Observation of the microfracture process and measurement of fracture toughness of the surface composites indicated that the fracture toughness increased with increasing additional volume fraction of $V_8C_7$ particles because $V_8C_7$ particles effectively played a role in blocking the crack propagation along the solidification cell region heavily populated with $Cr_2B$ particles. Particularly in the surface composite fabricated with Fe-based metamorphic powders and 30 % of VC powders, the hardness and fracture toughness were twice higher than those of the surface composite fabricated without mixing of VC powders.

• 한국기계가공학회지
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• 제21권7호
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• pp.10-20
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• 2022

Recently, metal additive manufacturing (AM) is being investigated as a new manufacturing technology. In metal AM, powder bed fusion (PBF) is a promising technology that can be used to manufacture small and complex metallic components by selectively fusing each powder layer using an energy source such as laser or an electron beam. PBF includes selective laser melting (SLM) and electron beam melting (EBM). SLM uses high power-density laser to melt and fuse metal powders. EBM is similar to SLM but melts metals using an electron beam. When these processes are applied, the mechanical properties and microstructures change due to the many parameters involved. Therefore, this study is conducted to investigate the effects of the parameters on the mechanical properties and microstructures such that the processes can be performed more economically and efficiently.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.359-359
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• 2011

Many research applications in basic sciences and biology such as protein crystallography require hard x-rays in the range of 3-20 keV with high brightness. A medium energy storage ring as PLS-II with a beam energy of 3 GeV can meet such high photon energies. In-vacuum undulators (IVU) with a period length of 20 mm and a peak field of 0.97 T are used in the PLS-II ring to produce such X-rays in the fundamental or higher harmonics. Due to the many poles and high fields, insertion devices like wigglers and undulators have a significant impact on the stability of the electron beam with potential degradation of beam quality and life time. Therefore, nonlinear fields must be determined by measurement and evaluated as to their impact on beam stability. Specifically, transverse field roll-off can be a serious detriment to injection in top-up mode and must be corrected. We use magnetic field measurement data to evaluated beam stability by tracking particles using an explicit symplectic integrator in both, transverse and longitudinal planes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.