• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.1-6
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• 2010

CuInGaSe(CIGS) mixed-source was prepared by hydride vapor phase epitaxy (HVPE). Each metal was mixed in regular ratio and soaked at $1090^{\circ}C$ for 90 minutes in nitrogen atmosphere. After making the mixed-source to powder state, the pellet was made by the powder. The diameter of pellet is 10 mm. The CIGS thin film was deposited on soda lime glass evaporated Mo layer bye-beam evaporator. To confirm the crystallization, we measured X-ray diffraction (XRD). High intensity X-ray peaks diffracted from (112), (204)/(220), (116)/(312) and (400) of CIGS thin film and from (110) of Mo were confirmed by XRD measurement.

• Journal of the Korean Magnetics Society
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• v.12 no.5
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• pp.184-188
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• 2002

The Cu/Ni/Cu(002)/Si(100) films which have perpendicular magnetic anisotropy were deposited by e-beam evaporation methods. From the reflection high energy electron diffraction pattern, the films were confirmed to be grown epitaxially on silicon. After 2X lots ions/$\textrm{cm}^2$ C+ irradiation, magnetic easy-axis was changed from surface normal to in-plane as shown in the hysteresis loop of magneto-optical Kerr effects. It became manifest from analysis of X-ray reflectivity and grazing incident X-ray diffraction that even though interface between top Cu layer and Ni layer became rougher, the contrast of Cu and Ni's electron density became manifest after ion irradiation. In addition, the strain after deposition of the films was relaxed after ion irradiation. Strain relaxation related with change of magnetic properties and mechanism of intermixed layer's formation was explained by thermo-chemical driving force due to elastic and inelastic collision of ions.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Progress in Medical Physics
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• v.23 no.4
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• pp.234-238
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• 2012

A tumor on the eyelid is often treated using a high-energy electron beam, with a metallic eye shield inserted between the eyelid and the eyeball to preserve the patient's sight. Pretreatment quality assurance of the inner eyelid dose on the metallic shield requires a very small dosimetry tool. For enhanced accuracy, a flexible device fitting the curved interface between the eyelid and the shield is also required. The radiochromic film is the best candidate for this device. To measure the doses along the curved interface and small area, a 3-mm-wide strip of EBT2 film was inserted between the phantom eyelid and the shield. After irradiation with 6 MeV electron beams, the film was evaluated for the dose profile. An acrylic eye shield of the same size as the real eye shield was machined, and CT images free from metal artifacts were obtained. Monte Carlo simulation was performed on the CT images, taking into account eye shield material, such as tungsten, aluminum, and steel. The film-based interface dose distribution agreed with the MC calculation within 2.1%. In the small (millimeter scale) and curved region, radiochromic film dosimetry promises a satisfactory result with easy handling.

• Progress in Medical Physics
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• v.20 no.4
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• pp.308-316
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• 2009

To achieve the accurate evaluation of given absorbed dose from output dose of linear accelerator photon beam through investigate the characteristics of LiF:Mg,Cu,P TLD powder. This experimental TL phosphor is performed with a commercial LiF:Mg,Cu,P powder (Supplied by PTW) and TL reader (LTM, France). The TLD was exposed to 6 MV X rays of linear accelerator photon beam with range 15 to 800 cGy in blind dose at two hospitals. The dose evaluation of TLD was through the experimental algorithms which were dose dependency, dose rate dependency, fading and powder weight dependency. The glow curve has shown the three peaks which are 110, 183 and 232 degrees of heating temperature and the main dosimetric peak showed highest TL response at 232 high temperature. In this experiments, the LiF:Mg,Cu,P phosphor has shown the 2.5 eV of electron trap energy with a second order. This experiments guided the dose evaluation accuracy is within 1% +2.58% of discrepancy. The TLD powder of LiF:Mg,Cu,P was analyzed to dosimetric characterists of electron captured energy and order by glow shape, and dose-TL response curve guided the accuracy within 1.0+2.58% of output dose discrepancy.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.103-109
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• 2006

A target for a high-brightness microfocus x-ray tube, which is based on carbon nanotubes (CNT) as electron source, is designed. The x-ray tube has the following specifications: brightness of $1\times10^{11}phs/s.mm^2. mrad^2$, spot size $\~5{\mu}m$, and average x-ray energy of $20\~40 keV$. In order to meet the specifications, the design parameters of the target, such as configuration, material, thickness of the target as well as the required beam current, were optimized using computer code MCNPX. The design parameters were determined from the calculation of both x-ray spectrum and intensity distribution for a transmission type configuration. For the thin transmission type target to withstand vacuum pressure and localized thermal loading, the structural stability and temperature distribution were also considered. The material of the target was selected as molybdenum(Mo) and the optimized thickness was $7.2{\mu}m$ to be backed by $150{\mu}m$ beryllium (Be). In addition, the calculations revealed that the maximum temperature of the transmission target can be maintained within the limits of stable operation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

• Radiation Oncology Journal
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• v.16 no.3
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• pp.251-258
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• 1998

Purpose : This study was performed to analyze the factors affecting local control in malignant tumors of the parotid gland treated with surgery and postoperative radiation. Materials and methods : Twenty-six patients were treated for malignant tumors of the parotid gland from 1986 to 1995 at Department of Therapeutic Radiology, Chonnam University Hospital. Age of the patients ranged from 14 to 72 years (median : 55 years). Histologically 10 patients of mucoepidermoid carcinoma, 7 of squamous cell carcinoma, 4 of acinic cell carcinoma, 4 of adenoid cystic carcinoma and 1 of adenocarcinoma were treated. Total parotidectomy was performd in 15 of 26 patients, superficial in 7, subtotal in 4. Facial nerve was sacrificed in 5 patients. Postoperatively 4 patients had residual disease, 4 had positive resection margin. Radiation was delivered through an ipsilateral wedged pair of photon in 11 patients. High energy electron beam was mixed with photon in 15 patients. Electron beam dose ranged from 900 cGy to 3800 cGy (median 1700 cGy). Total radiation dose ranged from 5000 cGy to 7560 cGy (median : 6020 cGy). Minimum follow-up period was 2 years. Local control and survival rate were calculated using Kaplan-Meier method. Generalized Wilcoxon test and Cox proportional hazard model were used to test factors affecting local control. Results : Five (19$\%$) of 26 patients had local recurrence. Five year local control rate was 77$\%$. Overall five year survival rate was 70$\%$. Sex, age, tumor size, surgical involvement of cervical lymph node, involvement of resection margin, surgical invasion of nerve, and total dose were analyzed as suggested factors affecting local control rate. Among them patients with tumor size less than 4 cm (p=0.002) and negative resection margin (p=0.011) were associated with better local control rates in univariate analysis. Multivariate analysis showed only tumor size factor is associated with local control rate (p=0.022). Conclusion : This study suggested that tumor size is important in local control of malignant tumors of parotid gland.