• Progress in Medical Physics
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• v.31 no.4
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• pp.145-152
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• 2020

Purpose: In ionization-chamber dosimetry for high-dose-rate electron beams-above 20 mGy/pulse-the ion-recombination correction methods recommended by the International Atomic Energy Agency (IAEA) and the American Association of Physicists in Medicine (AAPM) are not appropriate, because they overestimate the correction factor. In this study, we suggest a practical ion-recombination correction method, based on Boag's improved model, and apply it to reference dosimetry for electron beams of about 100 mGy/pulse generated from an electron linear accelerator (LINAC). Methods: This study employed a theoretical model of the ion-collection efficiency developed by Boag and physical parameters used by Laitano et al. We recalculated the ion-recombination correction factors using two-voltage analysis and obtained an empirical fitting formula to represent the results. Next, we compared the calculated correction factors with published results for the same calculation conditions. Additionally, we performed dosimetry for electron beams from a 6 MeV electron LINAC using an Advanced Markus^® ionization chamber to determine the reference dose in water at the source-to-surface distance (SSD)=100 cm, using the correction factors obtained in this study. Results: The values of the correction factors obtained in this work are in good agreement with the published data. The measured dose-per-pulse for electron beams at the depth of maximum dose for SSD=100 cm was 115 mGy/pulse, with a standard uncertainty of 2.4%. In contrast, the k_s values determined using the IAEA and AAPM methods are, respectively, 8.9% and 8.2% higher than our results. Conclusions: The new method based on Boag's improved model provides a practical method of determining the ion-recombination correction factors for high dose-per-pulse radiation beams up to about 120 mGy/pulse. This method can be applied to electron beams with even higher dose-per-pulse, subject to independent verification.

• Journal of the Korean institute of surface engineering
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• v.43 no.4
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• pp.176-179
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• 2010

The InAs thin films were grown on GaAs(100) substrate with $2^{\circ}C$ tilted toward [$0\bar{1}\bar{1}$] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thin films were $480^{\circ}C$ and 0.5 ${\mu}m$, respectively. We studied the relation between the As BEP and the properties of InAs thin films. The properties of InAs thin films were observed by reflection high-energy electron diffraction (RHEED), optical microscope, and Hall effect. The growth, monitored by RHEED, was produced through an initial 2D (2-dimensional) nucleation mode which was followed by a period of 3D (3-dimensional) island growth mode. Then, the 2D growth recovered after a few minutes and the streak RHEED pattern remained clear till the end of growth. The crystal quality of InAs thin films is dependent strongly on the As BEP. When the As BEP is $3.6{\times}10^{-6}$ Torr, the InAs thin film has a high electron mobility of 10,952 $cm^2/Vs$ at room temperature.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.68-70
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• 2006

For the aluminum material of the thick-thickness more than 100mm Penetration depth Electron beam welding is effectively applicable with a characteristic of high energy intensity. But Al 6061 alloy has high crack sensitivity due to minor alloys, which are silicon, magnesium, copper etc. With a sample block of 135mm thickness EBW test was performed in vertical position. As tensile strength has $210{\sim}220N/mm^2$ with weld area broken. Bend test shows low ductility with fracture of partly specimens. Chemical contents of alloys show no difference between weld and base metal. Defect in middle weld area figures out typical hot crack due to low melting materials. Micro structure of weld area has some difference compare to HAZ and base metal. As a result of EBW test for Al 6061 alloy, it shows that weld defect could be occurred even though establishing of optimum weld parameter condition.

• Progress in Medical Physics
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• v.20 no.2
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• pp.97-105
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• 2009

Absorbed dose to water based protocols recommended that plane-parallel chambers be calibrated against calibrated cylindrical chambers in a high energy electron beam with $R_{50}$>7 $g/cm^2$ (E${\gtrsim}$16 MeV). However, such high-energy electron beams are not available at all radiotherapy centers. In this study, we are compared the absorbed dose to water determined according to cross-calibration method in a high energy electron beam of 16 MeV and in electron beam energies of 12 MeV below the cross-calibration quality remark. Absorbed dose were performed for PTW 30013, Wellhofer FC65G Farmer type cylindrical chamber and for PTW 34001, Wellhofer PPC40 Roos type plane-parallel chamber. The cylindrical and the plane-parallel chamber to be calibrated are compared by alternately positioning each at reference depth, $Z_{ret}=0.6R_{50}-0.1$ in water phantom. The $D_W$ of plane-parallel chamber are derived using across-calibration method at high-energy electron beams of 16, 20 MeV. Then a good agreement is obtained the $D_W$ of plane-parallel chamber in 12 MeV. The agreement between 20 MeV and 12 MeV are within 0.2% for IAEA TRS-398.

• Journal of Soil and Groundwater Environment
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• v.7 no.3
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• pp.61-70
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• 2002

Direct electron beam irradiation experiments on artificially contaminated soil by polynuclear aromatic hydrocarbons (PAHs) and polychlorinated biphenyls (PCBs) were performed to evaluate applicability of direct electron beam irradiation process for contaminated soil remediation. The removal efficiency of PAHs was about 97 % at 600 kGy and PCBs about 70 % at 800 kGy. PAHs were removed 27 % more, compared to PCBs although the absorbed dose was as low as 200 kGy. The contaminants decomposition was due predominantly to direct interaction of high-energy electrons and the target compounds rather than due to oxidation/reduction reaction by reactive intermediates. Radiolysis of electron beam may be able to decontaminate contaminated soil by toxic and recalcitrant organic compounds like as PAHs and PCBs effectively, but it may be economically uncompetitive. Thus, developments of post-treatment process of conventional site remediation technologies may be more practical and economical than direct radiolysis.

• Korean Journal of Metals and Materials
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• v.46 no.7
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• pp.458-463
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• 2008

High purity Fe thin films were prepared by the ion beam deposition method with $^{56}Fe^{+}$ions on the Si substrate at the room temperature. The Fe thin films were deposited at the ion energy of 50 eV and 100 eV. Microstructural properties were investigated on the atomic scale using high-resolution transmission electron microscopy (HRTEM). It was found that the Fe thin film obtained with the energy of 50 eV having an excellent corrosion resistance consists of the amorphous layer of ~15 nm in thickness and the bcc crystalline layer of about 30 nm in grain size, while the thin film obtained with the energy of 100 eV having a poor corrosion resistance consists of little amorphous layer and the defective crystalline layer. Furthermore the crystal structures and arrangements of the oxide layers formed on the Fe thin films were analyzed by processing of the HRTEM images. It was concluded that the corrosion behavior of Fe thin films relates to the surface morphology and the crystalline structure as well as the degree of purification.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.08a
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• pp.180-180
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• 2003

• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.314-319
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• 2001

In this study, the highly sensitive $CaSO_4$:Tm-PTFE TLDs has been fabricated for the purpose of measurement of high energy electron. $CaSO_4$:Tm phosphor powder was mixed with polytetrafluoroethylene(PTFE) powder and moulded in a disk type(diameter 8.5mm, thickness $90mg/cm^2$) by cold pressing. The batch uniformities were average deviation 3.1%. The TLDs were applied to measurement of absorbed dose distribution for high energy electron, the ranges were determined to be $R_{100}=14.5mm$, $R_{50}=24.1mm$ and $R_p=31.8mm$, respectively. The beam flatness were 4.5% as the variation of dose relative to the central axis over the central 80% of the field size at a maximum dose depth in a plane perpendicular to the central axis.

• Progress in Medical Physics
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• v.11 no.2
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• pp.147-155
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• 2000

Patient dose verification is one of the most important parts in quality assurance of the treatment delivery for radiation therapy. The dose distributions may be meaningfully improved by modulating two dimensional intensity profile of the individual high energy radiation beams In this study, a new method is presented for the pre-treatment dosimetric verification of these two dimensional distributions of beam intensity by means of a charge coupled device video camera-based fluoroscopic device (henceforth called as CCD-VCFD) as a radiation detecter with a custom-made software for dose calculation from fluorescence signals. This system of dosimeter (CCD-VCFD) could reproduce three dimensional (3D) relative dose distribution from the digitized fluoroscopic signals for small (1.0$\times$1.0 cm$^2$ square, ø 1.0 cm circular ) and large (30$\times$30cm$^2$) field sizes used in intensity modulated radiation therapy (IMRT). For the small beam sizes of photon and electron, the calculations are performed In absolute beam fluence profiles which are usually used for calculation of the patient dose distribution. The good linearity with respect to the absorbed dose, independence of dose rate, and three dimensional profiles of small beams using the CCD-VCFD were demonstrated by relative measurements in high energy Photon (15 MV) and electron (9 MeV) beams. These measurements of beam profiles with CCD-VCFD show good agreement with those with other dosimeters such as utramicro-cylindrical (UC) ionization chamber and radiographic film. The study of the radiation dosimetric technique using CCD-VCFD may provide a fast and accurate pre-treatment verification tool for the small beam used in stereotactic radiosurgery (SRS) and can be used for verification of dose distribution from dynamic multi-leaf collimation system (DMLC).

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.129-133
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• 2000

Boron nitride films were synthesized with $N_2$ion flux of low energy, up to 100 eV, at different substrate temperatures of no heating, 200, 400, 500, and $800^{\circ}C$, respectively. Boron was supplied by e-beam evaporation at the rate of $1.5\AA$/sec. For all the conditions, hexagonal BN (h-BN) phase was mainly synthesized and high resolution transmission electron microscopy (HRTEM) showed that (002) planes of h-BN phase were aligned vertical to the Si substrate. The maximum alignment occurred around $400^{\circ}C$. In addition to major h-BN phase, transmission electron diffraction (TED) rings identified the formation of cubic BN (c-BN) phase. But HRTEM showed no distinct and continuous c-BN layer. These results suggest that c-BN phase may form in a scattered form even when h-BN phase is mainly synthesized under small momentum transfer by bombarding ions, which are not reconciled with the macro compressive stress model for the c-BN formation.