• Journal of Radiation Protection and Research
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• v.16 no.2
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• pp.1-6
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• 1991

The $HgI_2$ single crystal which can be used for the ${\gamma}-ray$ detector at room temperature was grown by Temperature Oscillation Method. The low temperature photoluminescence, specific resistivity and trap concentration of $HgI_2$ single crystal were investigated. Three main luminescence bands were observed at 2.30eV, 2.20eV and 2.00eV at 20K, related to the excitons, I-vacancies and impurities, respectively. The specific resistivity and trap concentration of $HgI_2$ single crystal were $10^{11}{\Omega}\;cm\;and\;1.8{\times}10^{14}/cm^3$ at room temperature, respectively. Also the radiation detecting system was deviced by $HgI_2$ ${\gamma}-ray$ detector, one chip microprocessor, LCD module and personal computer. The prepared $HgI_2$ ${\gamma}-ray$ detector showed a good linearity of ${\gamma}-radiation$ dose for standard ${\gamma}-ray$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.291.1-291.1
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• 2013

We examined the temperature-dependent structural and magnetic properties of HgI2 in the temperature range of 300~400 K. HgI2 is a diamagnetic material and can be used for X-ray or γ-ray detectors. DCmagnetization measurements on HgI2 showed that there is a small but distinguishable change in its diamagnetic properties near 375 K. The magnetic property change is not expected because Hg and I are known as nonmagnetic elements. X-ray diffraction (XRD) measurements revealed a structural transition in the temperature of 350~400 K. Temperature-dependent x-ray absorption fine structure (XAFS) demonstrated that the chemical valence states of both Hg and I did not changed in the temperature range of 300~400 K. However, XAFS revealed that the bond-length disorder was slightly increased in the temperature range, particularly, near Hg atoms. The structural changes of HgI2 are likely related to its diamagnetic property change. We will discuss the relation between the diamagnetic properties and local structural properties of HgI2 in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.345-345
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• 2007

본 연구는 x선 영상검출기 적용을 위한 $HgI_2$ 필름의 누설전류 특성 향상을 위한 연구로서, $HgI_2$기반의 다양한 물질을 이용하여 다층구조 방식으로 제작된 필름의 누설전류 특성평가 및 제작된 다층구조의 상부전극물질의 변화에 따른 누설전류 특성을 평가하였다. $HgI_2$기반 다층구조의 제작 물질은 Parylene, $PbI_2$, a-Se을 사용하여 시편(parylene/ITO, ITO/$HgI_2/PbI_2$/ITO, ITO/$HgI_2$/a-Se/ITO)을 제작하였으며, 필름 제작공정은 Screen print, PVD공정으로 다층구조 필름을 제작하였다. 또 한, 다층구조로 제작된 필름에 상부 전극물질은 Au, In, ITO를 사용하여 누설전류의 특성을 평가하였다. 측정 장치로 DC Power Supply(556H. EG&G : 50~200V), X 선 발생장치(Toshiba KXO-50N), 차폐체 (Al 및 Cu), Oscilloscope (LeCroy, LC334AM, USA), Electrometer (Keithley, 6517), Ion chamber 2060 (Radical Co.)을 이용하여, 제작된 $HgI_2$기반 다층구조 sample의 누설전류 특성을 실험하였다. 이 결과로 다층구조에 제작된 물질 및 상부전극에 따른 누설전류의 특성을 평가하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.456-459
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• 2004

Analog film/screen systems have been being changed to a digital x-ray imaging device using direct conversion materials. Photocoductors for a direct detection flat-panel imager require high x-ray absorption, ionization and charge collection, low leakage current and large area deposition. In this work, $HgI_2$ films with excellent properties for x-ray detector were deposited by screen printing method. The thickness of $HgI_2$ film was about $150\;{\mu}m$. The passivation layer is fabricated using a-Se and parlyene, the both fabrication $HgI_2$ film were compared for analyzing the leakage current reduction. We measured electrical properties-leakage current, photosensitivity, SNR though I-V measurement, As the result, $HgI_2$ film using a-Se passivation layer had the greater

• Journal of the Korean Chemical Society
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• v.55 no.1
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• pp.38-45
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• 2011

The complexation behavior of the $\alpha$-ketostabilized phosphorus ylides $Ph_3P$=CHC(O) $C_6H_4-X$ (X=Br, Ph) towards the transition metal ions mercury (II) and Silver (I) was investigated. The mercury(II) complex {$HgX_2$ [Y]} 2 ($Y_1$=4-bromo benzoyl methylene triphenyl phosphorane; X=Cl(1), Br(2), I(3), $Y_2$=4-phenyl benzoyl methylene triphenyl phosphorane; X=Cl(4), Br(5), I(6)) have been prepared from the reaction of $Y_1$ and $Y_2$ with $HgX_2$ (X=Cl, Br, I) respectively. Silver complexes [$Ag(Y_2)_2]$ X(X=$BF_4$(7), OTf(8)) of the $\alpha$-keto-stabilized phosphorus ylides ($Y_2$) were obtained by reacting this ylide with AgX (X=$BF_4$, OTf) in $Me_2CO$. The crystal structure of complexes (1) and (4) was discussed. These reactions led to binuclear complexes C-coordination of ylide and trans-like structure of complexes $[Y_1HgCl_2]_2$. $CHCl_3$ (1) and $[Y_2HgCl_2]_2$ (4) is demonstrated by single crystal X-ray analyses. Not only all of complexes have been studied by IR, $^1H$ and $^{31}P$ NMR spectroscopy, but also complexes 1-3 have been characterized by $^{13}$CNMR.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.260-260
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• 1999

We compared c-axis tunneling characteristics of small stacked intrinsic Josephson junctions prepared on the surface of pristine, I-, and HgI$_2$-intercalated Bi$_2Sr_2CaCu_2O_{8+x}$ (Bi2212) single crystals. The R(T) curves are almost metallic in I-Bi2212 specimens, but semiconducting in HgI$_2$-Bi2212 ones.· The transition temperatures were 82.0 K, 73.0 K, and 76.8 K for pristine Bi2212, I-Bi2212, and HgI2-Bi2212 specimens, respectively, consistent with p-T$_c$ phase diagram. Current-voltage (IV) characteristics of both kinds of specimens show multiple quasiparticle branches with well developed gap features, indicating Josephson coupling is established between neighboring CuO$_2$ planes. The critical current I$_c$ of I-Bi2212 is almost the same as of that of pristine crystals, but I$_c$ is much reduced in Hgl$_2$-Bi2212. In spite of expanded interlayer distances, the interlayer coupling is not significantly affected in I-Bi2212due to holes generated by iodine atoms. The coupling in HgI$_2$-Bi2212 is, however, weakened due to inertness of HgI$_2$ molecules and the expansion of interlayer distance. Relation between the superconducting transition temperature T$_c$ and the critical current I$_c$ seems to contradict Anderson's interlayer-pair-tunneling theory but agree with a modified version of it.

• Journal of Photoscience
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• v.1 no.1
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• pp.47-52
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• 1994

Effects of HgCl$_2$-treatment on electron transport, chlorophyll a fluorescence and its quenching were studied using isolated barley (Hordeum vulgare L. cv. Albori) chloroplasts. Depending on the concentration of HgCI$_2$, photosynthetic oxygen-evolving activities of photosystem II (PS II) were greatly inhibited, whereas those of photosystem I (PS I) were slightly decreased. The inhibitory effects of HgCl$_2$ on the oxygen-evolving activity was partially restored by the addition of hydroxyamine, suggesting the primary inhibition site by HgCl$_2$2-treatment is close to the oxidizing site of PS tl associated with water-splitting complex. Addition of 50 $\mu$M HgCI$_2$ decreased both photochemical and nonphotochemical quenching of chlorophyll fluorescence. Especially, energy dependent quenching (qE) was completely disappeared by HgCl$_2$-treatment as observed by NH$_4$CI treatment. In the presence of HgCI$_2$, F'o level during illumination was also increased. These results suggest that pH gradient across thylakoid membrane can not be formed in the presence of 0 $\mu$M HgCl$_2$. In addition, antenna pigment composition might be altered by HgCl$_2$-treatment.

• Journal of the Korean Society of Radiology
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• v.3 no.4
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• pp.29-33
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• 2009

Recently, the compound materials(a-Se, $HgI_2$, PbO, CdTe, $PbI_2$, etc.) that are used in flat panel x-ray imager have been studied for digital x-ray imaging. In this paper, the signal detection properties of $HgI_2$ and a-Se conversion layer, are compared. The thick $HgI_2$ film is fabricated by special particle-in-binder method and the conventional vacuum thermal evaporation is used for a deposition of a-Se film. And an electrical characteristic measurements were investigated about leakage current, signal response property and x-ray sensitivity. From the experimental results show that the $HgI_2$ film has a low operation voltage and high signal generation than that of a-Se.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.189-194
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• 2014

In this study, from a new x-ray detector that combines a columnar CsI:Na scintillation layer with a photosensitive mercuric iodide layer was investigated. In this structure, X-rays are converted into visible light on a thick CsI:Na layer, which is then converted to electric charges in a thin $HgI_2$ bottom layer. The thin coplanar mercuric iodide films as a photosensitive converter requiring only a few tens of volts of bias, associated with a thick columnar coating of phosphor layer, were simulated and designed. The results of this research suggest that the new coplanar x-ray detector with a hybrid-type structure can resolve the following problems: high voltage from the a-Se, and low conversion efficiency from the indirect conversion method. The results of this research suggest that the new CsI:Na/$HgI_2$ x-ray detector with a double-layer type structure can resolve the following problems: high voltage from the direct conversion method, and low conversion efficiency from the indirect conversion method.

• Animal cells and systems
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• v.15 no.3
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• pp.181-187
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• 2011

Transient receptor potential vanilloid type 1 (TRPV1) receptor plays an important role as a molecular detector of noxious signals in primary sensory neurons. Activity of TRPV1 can be modulated by the change in the environment such as redox state and extracellular cations. In the present study, we investigated the effect of the mercury chloride ($HgCl_2$) on the activity of TRPV1 in rat dorsal root ganglia (DRG) neurons using whole-cell patch clamp technique. Extracellular $HgCl_2$ reversibly reduced the magnitudes of capsaicin-activated currents ($I_{cap}$) in DRG neurons in a dose-dependent manner. The blocking effect of $HgCl_2$ was prevented by pretreatment with the reducing agent dithiothreitol (DTT). Inhibition of $I_{cap}$ by $HgCl_2$ was abolished by point mutation of individual cysteine residues located on the extracellular surface of TRPV1. These results suggest that three extracellular cysteines of TRPV1, Cys616, Cys634 and Cys621, are responsible for the oxidative modulation of $I_{cap}$ by $HgCl_2$.