• Bulletin of the Korean Chemical Society
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• 제30권9호
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• pp.2132-2134
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• 2009

• 대한금속재료학회지
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• 제46권4호
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• pp.217-222
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• 2008

Characteristics of etching and induced surface morphology variation by wet-etching of n-face n-type GaN were investigated using KOH solutions. It was observed that hexagonal pyramids were formed on the etched surface regardless of etching conditions. However, the size of the hexagonal pyramids was changed as the etching time and temperature increased, respectively. Initially, as the etching time and concentration of KOH solution increased, the hexagonal pyramid was observed to be dissociated into smaller pyramids. However, as the etching time increased further, the size of the hexagonal pyramids increased again, indicating that the etching of N-face n-type GaN by KOH solutions proceeded through the evolution of hexagonal pyramids, such as formation, dissociation and enlargement of pyramids. Furthermore, it was also observed that there is a correlation between the photoluminescence intensity of the etched surface and the value of root-mean-square roughness. The intensity of PL increased as the roughness value increased due to the enhancement of the extraction efficiency of the generated photons.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• 수산해양기술연구
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• 제40권4호
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• pp.351-359
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• 2004

본 연구에서는 실선에 적용된 알루미늄 하니콤 샌드위치 판 (AHSP)을 저자가 제안한 심재의 형상이 피라미드인 알루미늄 샌드위치 판의 구조적 특성 및 진동특성을 검토해 보았다. 알루미늄 피라미드 샌드위치 판(APSP)의 기초 자료로 쓰일 수 있게 심재의 각도변화, 높이변화 및 면재와 심재의 두께변화에 따른 구조적 특성을 검토한 결과 APSP가 강도 및 강성에서 우수함을 보였으며, 질량대비 큰 강성 때문에 고유진동수도 다소 크게 평가되었다.

• Structural Engineering and Mechanics
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• 제50권4호
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• pp.471-486
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• 2014

The number of explosive attacks on civilian structures has recently increased. Protection of structure subjected to blast load remains quite sophisticated to predict. The use of the pyramid cover system (PCS) to strengthen sandwich structures against a blast terror has great interests from engineering experts in structural retrofitting. The sandwich steel structure performance under the impact of blast wave effect is highlighted. A 3-D numerical model is proposed to study the PCS layer to strengthen sandwich steel structures using finite element analysis (FEA). Hexagonal core sandwich (XCS) steel panels are used to study structural retrofitting using the PCS layer. Field blast test is conducted. The study presents a comparison between the results obtained by both the field blast test and the FEA to validate the accuracy of the 3-D finite element model. The effects are expressed in terms of displacement-time history of the sandwich steel panels and pressure-time history effect on the sandwich steel panels as the explosive wave propagates. The results obtained by the field blast test have a good agreement with those obtained by the numerical model. The PCS layer improves the sandwich steel panel performance under impact of detonating different TNT explosive charges.

• 한국재료학회지
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• 제16권1호
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• pp.63-67
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• 2006

The characteristics of the wet-etching of ZnO thin films were investigated using hydrochloric and phosphoric acid solutions as etchants. The etch rate of ZnO films, using highly diluted hydrochloric acid solutions at a concentration of 0.25% in deionized water, was determined to be about 120 nm/min, and linearly increased with increasing the acid concentration, resulting in $1.17{\mu}m/min$ when a 2% HCl solution was used. The surface of ZnO etched by an HCl solution, observed by scanning electron microscopy, showed a rough morphology with a high density of hexagonal pyramids or cones with sidewall angles of about ${\sim}45^{\circ}C$. Moreover, the sidewall angles of the masked area were similar to those of the pyramids on the surface. In comparison, the surface of ZnO etched by a phosphoric acid had a smooth surface morphology. The origin of this difference is from the very initial stage of etching, indicating that the etch-mechanism is different for each solution. Furthermore, when $H_3PO_4$ was added to the HCl aqueous solution, the morphology of the etched surface was greatly enhanced and the sidewall angle was also increased to about $65^{\circ}C$.

• 한국세라믹학회지
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• 제54권3호
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• pp.211-216
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• 2017

ZnO nanopowder was synthesized using a relatively facile and convenient glycol process. ZnO nanopowder was successfully synthesized at temperatures as low as $125^{\circ}C$ using zinc acetate as the Zn source and 1,4-butanediol as the solvent. Then, the effects of water content on the growth process and morphological evolution of ZnO powders were investigated using 1,4-butanediol and water as binary solvent mixtures. Using pure 1,4-butanediol at a temperature above $125^{\circ}C$, the prepared hexagonal ZnO nanopowder exhibited a quasi-spherical shape with average crystalline size of approximately 30 - 50 nm. It is also demonstrated that the morphology of ZnO powders can be controlled by the addition of various water content in 1,4-butanediol. With increasing water content, the morphologies of the ZnO powders changed sequentially from quasi-spherical to hexagonal plate and pyramid, and finally to hexagonal prismatic with a pyramidal tip. A sharp peak centered at 384 nm in the UV region and a weak broad peak in the visible region between 450 and 700 nm were shown in the room temperature PL spectra of the ZnO synthesized using the glycol process, regardless of the addition of water, suggesting that ZnO nanopowders with the best crystallinity were obtained under these conditions.

• 한국CDE학회논문집
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• 제10권1호
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• pp.70-75
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• 2005

A 3D solid element mesh generation algorithm was newly developed. 3D surface points of global rectangular coordinates were supplied by a 3D laser scanner. The algorithm is strait forward and simple but it generates mixed solid elements such as hexagonal, pyramid and prism types. Then, the surface triangular or rectangular elements were generated from the solid elements. The key of the algorithm is elimination of elements and 3D adaptive surface smoothing using given 3D surface point data.

• 한국재료학회지
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• 제9권3호
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• pp.257-262
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• 1999

MOCVD를 이용하여 $SiO_2$로 패턴된 GaN/sapphire 기판상에서 $NH_3$유량과 성장온도가 GaN 성장의 선택성과 성장 특성에 미치는 영향을 조사하였다. $NH_3$유량을 500~1300sccm, 성장온도를 $950~1060^{\circ}C$로 변화시켜 성장변수에 따른 영향을 주사전자현미경으로 관찰하였다.$NH_3$유량이 증가할수록 성장선택성이 향상되었으나 기판윈도우에서 성장되는 GaN 형상변화에는 큰 영향을 미치지 못하였다. 성장온도가 높을수록 GaN의 성장선택성이 향상됨이 관찰되었다. 패턴 모양을 원형, 선형, 방사선모양(선형 패턴을 30, $45^{\circ}$로 회전)으로 제작하여 GaN 성장을 수행한 후 관찰한 결과 {1101}으로 이루어진 Hexagonal 피라밋 형상과 마스크층 위로의 측면성장을 얻을 수 있었으며, 성장조건에 따른 <1100>와 <1210>의 방향으로의 측면성장속도의 차이를 관찰할 수 있었다.

• 한국공간구조학회논문집
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• 제13권1호
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• pp.87-96
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• 2013

This study investigated characteristics of buckling load and effective buckling length by member rigidity of dome-typed space frame which was sensitive to initial conditions. A critical point and a buckling load were computed by analyzing the eigenvalues and determinants of the tangential stiffness matrix. The hexagonal pyramid model and star dome were selected for the case study in order to examine the nodal buckling and member buckling in accordance with member rigidity. From the numerical results, an effective buckling length factor of adopted models was bigger than that of Euler buckling for the case of fixed boundary. These numerical models indicated that the influence of nodal buckling was greater than that of member buckling as member rigidity was higher. Besides, there was a tendency that the bifurcation appeared on the equilibrium path before limit point in the member buckling model.