• 한국표면공학회지
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• 제46권5호
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• pp.187-191
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• 2013

Niobium nitride (NbN) films were deposited on AISI 304 stainless steels by inductively coupled plasma (ICP) assisted dc magnetron sputtering method at different ICP powers, and the effects of ICP power on the phase formation, mechanical and chemical properties of the films were investigated. X-ray diffraction analysis (XRD) and field emission scanning electron microscopy (FESEM) were used to analyze the crystal structure and micro-knoop hardness was used to measure the hardness of the films. Also, 3-D mechanical profiler and a ball-on-disk wear tester were used to measure the thickness of the films and to estimate wear characteristics, respectively. The thickness of the films decreased but their hardness increased with increasing ICP power, and it was confirmed that only cubic ${\delta}$-NbN(200) remained at high ICP power. At lower ICP powers, a mixture of the hexagonal ${\delta}^{\prime}$-NbN and cubic ${\delta}$-NbN phases was obtained in the films and the hardness decreased. The corrosion potential value increased gradually with increasing ICP power, but the changes of ICP power did not significantly influence the overall corrosion resistance.

• 대한금속재료학회지
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• 제50권1호
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• pp.78-85
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• 2012

Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

• Bulletin of the Korean Chemical Society
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• 제15권9호
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• pp.713-718
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• 1994

Manganese-incorporated neodymium oxide systems with a variety of Mn mol% were prepared to investigate the effect of doping on the electrical properties of neodymium oxide. XRD, XPS, SEM, DSC, and TG techniques were used to analyze the specimens. The systems containing 2, 5, 8, and 10 mol% Mn were found to be solid solutions by X-ray diffraction analysis and the lattice parameters were obtained for the single-phase hexagonal structure by the Nelson-Riley method. The lattice parameters, a and c, decreased with increasing Mn mol%. Scanning electron photomicrographs of the specimens showed that the grain size decreased with increasing Mn mol%. The curves of log conductivity plotted as a function of 1/T in the temperature range from 500 to 1000$^{\circ}C$ at $PO_2$'s of $10^{-5}$ to $10^{-1}$ atm for the specimens were divided into high-and low-temperature regions with inflection points near 820-890$^{\circ}C$. The activation energies obtained from the slopes were 0.53-0.87 eV for low-temperature region and 1.40-1.91 eV for high-temperature region. The electrical conductivities increased with increasing Mn mol% and $PO_2$, indicating that all the specimens were p-type semiconductors. At $PO_2$'s below $10^{-3}$ atm, the electrical conductivity was affected by the chemisorption of oxygen molecule in the temperature range of 660 to 850$^{\circ}C$. It is suggested that electron holes generated by oxygen incorporation into the oxide are charge carriers for the electrical conduction in the high-temperature region and the system includes ionic conduction owing to the diffusion of oxygen atoms in the low-temperature region.

• Current Applied Physics
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• 제18권11호
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• pp.1426-1430
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• 2018

High magnetic field effects on the microstructure and magnetic properties of $BaFe_{12}O_{19}$ hexaferrites synthesized hydrothermal method have been investigated. The obtained results indicate that the lattice constant decreases gradually as the magnetic field strength increases, which may be attributed to the lattice distortion resulted from the high magnetic field. Polycrystalline $BaFe_{12}O_{19}$ samples prepared under magnetic field strength at zero and 5 T are single phase. It is found that application of external magnetic field during synthesis can induce orientated growth of the hexaferrite crystals along the easy magnetic axis. The magnetic properties can be effectively regulated by an application of high magnetic fields. It is observed that the $BaFe_{12}O_{19}$ prepared under a 5 T magnetic field exhibits a higher room-temperature saturation magnetization (66.3 emu/g) than that of the sample (43.6 emu/g) obtained without magnetic field. The results can be explained as the enhanced crystalline, improvement of $Fe^{3+}$ ions occupancy and the oriented growth induced by the external magnetic field. The growing orientation of particles gives rise to increased coercivity due to the enhancement in shape anisotropy. It is expected that an application of magnetic field during the formation of magnetic nanoparticles could be a promising technique to modify magnetic properties with excellent performance.

• 대한금속재료학회지
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• 제46권4호
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• pp.249-256
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• 2008

0.5 wt% Al doped ZnO thin films (AZO) were prepared on glass substrates using RF magnetron sputtering method. Thin films were grown at substrate temperature of $250^{\circ}C$, RF power of 75W, working pressure of 10 mTorr, by changing the $O_2/Ar$ pressure ratio from 0% to 16.7%. The effects of oxygen partial pressure during the deposition process on structural and optical properties of the films were investigated using XRD, SEM, AFM, EPMA and UV-visible spectroscopy. All the AZO thin films were grown as hexagonal wurtzite phase with the c-axis preferred out-of-plane orientation. The surface roughness and grain size of AZO films decreased with increasing oxygen ratio from 10.6 nm to 3.2 nm and 94.9 nm to 30.9 nm, respectively. On the other hand, the transmittance and band gap energy of the AZO films increased from 84.7% to 92.6% and 3.24 eV to 3.28 eV, respectively with increasing the $O_2/Ar$ pressure ratio.

• 공업화학
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• 제31권6호
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• pp.668-673
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• 2020

본 논문에서는 수산화코발트[Co(OH)2] 층간 소재를 초음파(sonication) 액상 박리 공정을 사용하여 얇은 2차원 나노시트(nanosheet)로 박리하였다. 상기의 Co(OH)2 촉매는 27.5 ㎡ g-1의 넓은 비표면적을 갖는 한 장의 육각 나노시트로 박리 되었다. 또한, 특성 분석 및 PET 해중합(depolymerization) 반응의 촉매로서 사용되어 고활성을 증명하였다. 해당 촉매를 사용한 PET 해중합 반응은 200 ℃에서 30 min 이내에 100%의 높은 PET전환율과 100%의 높은 BHET 수율을 보여주었다. 박리된 Co(OH)2의 재사용성을 확인하기 위해 반응 후 필터를 사용해 촉매를 회수하여 PET 해중합 반응을 진행하였다. 총 4번의 재사용 동안 100%의 PET 전환율과 100%의 BHET 수율을 보여주어 촉매의 우수한 안정성을 증명하였다.

• 한국결정성장학회지
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• 제27권2호
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• pp.89-93
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• 2017

다양한 성장온도, V/III 비율, 성장속도과 같은 공정변수의 조절을 통하여 GaN 단결정을 성장시키고, 그에 따른 표면 및 재료 내부의 결함분석을 통하여 고휘도 고출력의 소자적용을 위한 bulk GaN 단결정의 두께를 최적화하였다. 2인치 직경의 sapphire 기판 위에 HVPE(hydride vapor phase epitaxy) 공정변수들을 조절하여, 0.3~7.0 mm 두께의 GaN 결정을 성장시켰다. 성장된 GaN 단결정의 구조분석을 위하여 XRD 분석을 사용하였고, 공정변수의 변화에 따른 표면 특성은 광학 현미경을 이용하여 관찰하였다. 성장된 두께에 따른 결함밀도 분석을 위하여 화학습식 에칭하였고, 에칭된 표면을 SEM으로 관찰하였다.

• 한국자기학회지
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• 제9권1호
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• pp.35-40
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• 1999

M-type Ba 페리이트를 Ba 대신 Sr으로 치환시킨 페라이트 분말과 Fe대신 Co-Ti으로 치환시킨 육방 페라이트 분말을 각각 citrate sol-gel법과 2 MOE sol-gel법으로 합성하였다. 이들 분말들을 소결 처리 후 수소 분위기 하에서 온도를 변화시키면서 환원처리 하였다. X-선 회절을 이용한 결정구조 해석에서 105$0^{\circ}C$에서 소결 처리된 분말의 경우 단일상의 M-type 육방정 구조로 나타났다. X-선 회절실험 결과 Sr0.5Ba0.5Fe12O19과 다르게, Co-Ti 치환형 페라이트인 Sr0.7Ba0.3Fe10CoTiO19에서는 Co-Ti 치환이 환원과정을 저지시키는 효과가 있는 것으로 나타났다. 육방 페라이트에서 수소환원에 의한 포화자화 Ms값의 증가 원인을 알아보기 위하여 Mossbauer 분광실험을 실시하였다. Mossbauer 실험결과는 대부분의 $\alpha$-Fe가 4fvi자리와 12k자리로부터 발생되는 것으로 나타났으며, 이 $\alpha$-Fe 형성에 의한 Fe3+이온의 결함이 자기 상호작용의 붕괴를 가져와서, 자기이방성의 변화를 초래하고 또한 Ms값의 증가를 가져오는 것으로 추측된다.

• 공업화학
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• 제9권6호
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• pp.822-828
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• 1998

$^1H$ NMR gradient spin echo법을 이용하여 polyoxyethylene dodecyl ether[$C_{12}H_{25}(OCH_2CH_2)nOH$] 수용액에서 미셀 형성과정에 대한 것을 비교검토 하였다. 여기서 n=5($C_{12}EO_5$) 및 n=8($C_{12}EO_8$)인 비이온성 계면활성제를 사용하였으며 등방성상의 영역범위에서의 자기확산 계수는 일정온도에서 농도변화에 따른 pulsed field gradient법을 사용하여 측정하였고, 또한 여러 프로톤의 시그날에 대한 피크폭(line width)을 추적하여 액정 특성에 대한 것을 검토하였다. 알킬사슬의 메틸렌 시그날의 넓혀짐은 $C_{12}EO_5-$물 계에서는 핵사고날 액정상의 근접될 때 관찰되었지만 $C_{12}EO_8-$물 계에서는 넓혀짐이 보다 작게 관찰되었다. 낮은 온도에서 농도가 증가함에 따라 $C_{12}EO_5$에서는 막대형 미셀이 형성되지만 $C_{12}EO_8$에서는 전 농도 범위에서 작은 미셀로 이루워 진다. 계면활성제의 자기확산계수는 서서히 증가하다가 극소점에 이르러서는 농도가 증가함에 따라 급격히 감소한다. 극소점의 위치는 온도가 담점에 이르렀을 때 낮은 농도에서 나타나고 이 계에서는 두 개의 등방성 상으로 분리된다. 피크폭 연구에서 피크폭의 넓어짐은 $C_{12}EO_5$에서는 온도가 증가되었을 때 온도의 차이로 형성된다. 그 결과 담점에 이르러 계면활성제의 회합체가 커지는 것으로 생각한다. 이 회합체가 담점에 이르러 한정된 모양을 갖는 것은 아니다. $C_{12}EO_8$에서는 미셀들이 온도의 증가에 영향을 받지 않고 미셀형성이 불확실하다. 에틸렌옥사이드 일부분의 메틸렌 시그날은 일관되게 좁게 나타났다. 회합에 있어서 이들은 알킬사슬 메틸렌보다 작은 질서로 나타내었다. 회합의 크기나 모양에 있어서 여러 변화성은 상 변화에 따라 등방성과 액정상의 안정성 범위가 정하여 진다. 회합체 크기와 상 구조는 여러 온도와 농도 변화에서 분자의 효과적 모형을 고려하여 정성적인 결과에 따른다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.