• 대한전자공학회논문지
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• 제15권1호
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• pp.5-11
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• 1978

Flash증착법으로 Si단결정 (111)면위 에 ZnSe박막을 성장시켜 Si-ZnSe n-n heterojunction을 만들었다. 이 heterojunction의 광기전력 특성을 규명하여 가시광 영역에 감도를 갖는 frequency meter로 사용할 수 있음을 제시했다.

• 대한전자공학회논문지
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• 제13권2호
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• pp.23-27
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• 1976

p형과 n형 Si wafer의 111면위에 5x10-5mmHg의 진공내에서 SnO2-x박막을 Flash증착법으로 성장시킨 다음 산소분위기 속에서 열처리하여 Si-SnO2 heterojunction을 만들고 물성측정으로 부터 Energy bnad profile을 구하였다. 이 heterojunction은 양호한 정류성 Junction이며 400nm부터 1200nm까지 분광감도를 갖고 시정수가 -10-18sec로 고속광소자로 적합하며 Si p-n homojunction solar cell에 비하여 특성이 우수하고 제작이 간단하기 때문에 태양전지로 사용해도 손색이 없다. Si-SnO2 heterojunction was prepared by oxidzing at oxygen atmosphere SnO2-x Which made by Flith evaporation of SnO2 powder on III surface of p and n type Si single crystals. The energy band Profile of Si·SnO2 heterojunction was depicted from its physical properties. This heterojunction was very good rectifying junction, very sensitive in spectral response of Photovoltage at from 400nm to 1200nm, and -10-8sec of time contant. From above properties, this heterojunction was found ps good high speed photovoltaic device and solar cell.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2022년도 가을 학술논문 발표대회
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• pp.181-182
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• 2022

The properties of cement mortar with nano-heterojunction photocatalysts were investigated in this study. The following tests were conducted with the cement mortar : (1) Flow test of fresh cement mortar, (2) compressive strength and (3) acetaldehyde removal efficiency under visible light. Results indicated that the cement mortar with nano-heterojunction photocatalysts showed higher compressive strength and higher acetaldehyde removal efficiency as the mixing ratio of nano-heterojunction increased.

• 대한전자공학회논문지
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• 제12권4호
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• pp.35-40
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• 1975

ZnTe-lnSb Heterojunction을 계면합금법으로 제작했다. Insb의 In이 ZnTe결정에 확산되어 계면에 고저항 ZnTe충을 성장시켜 P-i-n구조를 갖고 있으며 전류수송기구는 p형 ZnTe 가전자대로부터 고저항 ZnTe충에 주입된 Hole의 SCLC기구에 의존된다. 순방향과 역방향 전압을 인가할때 실온에서 오런지색 전 장발장이 관측되었다. The Zn7e-lnSb heterojunctions was prepared by interface alloying technique. The structure of this beterojunction had p-i-n which semi-insulating ZnTe laver at interface of this heterojunction was formed by diffusing In of InSb into ZnTe crystal. The current transport mechanism of this heterojunction was Spacecharge-Limited-Current(SCLC) mechanism by hole at semi-insulating ZnTe layer. The hole wart injected from valence band of p- type SnTe crystal. Orange color electroluminescence was observed at this heterojunction when forward and reversed bias voltage applied.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.209-209
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• 2012

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An additional doping was not applied for heterojunction solar cells due to the spontaneous junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedding Si heterojunction solar cell provided significantly enhanced efficiency of 9.23% as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme of the effective TCO film-embedding heterojunction Si solar cells.

• Current Optics and Photonics
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• 제6권4호
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• pp.367-374
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• 2022

A photodetector based on a reduced graphene oxide (RGO)/n-Si heterojunction with high responsivity, detectivity and fast response speed is presented. Here, we put forward a simple vacuum filtration method to prepare RGO film and transfer it onto an n-Si substrate to form an RGO/n-Si heterojunction. The experimental results show that the heterojunction has good rectification characteristics, and the response and recovery time are less than 0.31 s and 0.25 s, respectively. Under 470 nm light conditions at -2 V applied voltage, the responsivity and detectivity of the device are 65 mA/W and 4.02 × 10¹⁰ cmHz^1/2W^-1, respectively. The simple preparation process and good performance of the RGO/n-Si heterojunction make it a promising material for photoelectric detection, especially in the near-ultraviolet band.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1332_1333
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• 2009

The electrical properties of an inorganic/organic heterojunction has been investigated by spin coating the p-type polymer poly(3,4 ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT:PSS) on an n-type gallium doping zinc oxide (GZO) film. Current-voltage (I-V) characteristics of the fabricated heterojunction diodes have a good rectifying characteristics. The barrier height is calculated 0.8 eV.

• 전자공학회논문지A
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• 제30A권3호
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• pp.88-94
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• 1993

In this paper, a simple Ebers-Moll Model for the heterojunction bipolar transistor is presented. Using the model structure for the npn type HBT, the current-voltage characteristics was analyzed. And from the obtained terminal currents, the Ebers-Moll equations were derived. Then substituting the physical parameters for heterojunction to those for homojunction, this model would be used to analyze the characteristics of single and/or duble heterojunction HBT's. And directly relating model parameters to device parameters, it would be also used to optimize the characteristics of HBT's. The simulated results using this model were in good agreement with experimental data.

• 한국정보통신학회논문지
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• 제15권6호
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• pp.1349-1354
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• 2011

본 연구에서는 CdZnS와 CdTe로 구성되는 이종접합 소자를 제작하고 커패시턴스-전압 특성을 조사하였다. CdS/CdTe 접합의 경우, 역방향 바이어스가 증가함에 따라 공핍층의 폭이 커져 커패시턴스 값이 약간 감소하였으나 CdZnS/CdTe 접합에서는 CdTe 박막 내에서의 공핍층 폭이 바이어스에 크게 영향을 받지 않아 커패시턴스 값이 역방향 바이어스에 따라 거의 변화가 없었다. 바이어스 전압을 인가하지 않은 상태에서의 공핍층 폭은 높은 CdZnS 박막의 비저항 및 낮은 캐리어 농도로 인해 CdS/CdTe 접합보다 CdZnS/CdTe 접합에서 보다 큰 값을 나타내었다. CdZnS/CdTe 태양전지의 개방전압은 Zn의 비율이 커짐에 따라 CdZnS 박막과 CdTe 박막의 전자 친화력 차이의 감소로 인하여 크게 증가하였으나, Zn 비율이 0.35 이상인 경우 오히려 감소함을 알 수 있었다. 또한 CdZnS 박막의 높은 비저항이 태양전지의 직렬저항을 상승시켜 전지의 변환 효율은 오히려 감소함을 알 수 있었다.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.55-59
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• 2020

Copper Oxide (CuO) films were deposited on the n-type silicon wafer by rf magnetron sputtering for heterojunction solar cells. And then the samples were treated as a function of the annealing temperature (300-600℃) in a vacuum. Their electrical, optical and structural properties of the fabricated heterojunction solar cells were then investigated and the power conversion efficiencies (PCE) of the fabricated p-type copper oxide/n-type Si heterojunction cells were measured using solar simulator. After being treated at temperature of 500℃, the solar cells with CuO film have PCE of 0.43%, Current density of 5.37mA/㎠, Fill Factor of 39.82%.