• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.147-147
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• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.333-336
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• 1999

The relationship between the DC degradation characteristics of the $ZnO-Bi_2O_3$ varistor and post-annealing is investigated in this study. $ZnO-Bi_2O_3$ varistors containing $SiO_2$ range 0.3 mol% were fabricated by standard ceramic techniques. The post- annealing is performed at $550^{\circ}C$ for 0, 1.5 and 5h. A little phase transition is found according to the analysis of X-ray diffraction. DC degradation tests were conducted at $115\pm3^{\circ}C$ for periods up to 22h. Current-voltage analysis was used to determine nonlinear coefficients($\alpha$). Capacitance-voltage analysis enable the donor density($N_d$) and the barrier height($E_B$) to be determined. From above analysis, it is found that the past-annealing for 5h improved degradation characteristics in $ZnO-Bi_2O_3$ with Si additive.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1998.05a
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• pp.405-408
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• 1998

In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 5$0^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. Measurement electrical parameters are forward turn-on voltage, reverse breakdown voltage, barrier height, saturation current, ideality factor, dynamic resistance acceding to junction concentration of substrates and temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation current and ideality factor were increased by substrates concentration variations. Reverse breakdown voltage and dynamic resistance were increased by temperature variations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.18-18
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• 2009

최근 다양하게 연구되고 있는 무분극(nonpolar) 갈륨질화물(GaN) 소재는 자발분극(spontaneous polarization) 및 압전분극(piezoelectric polarization) 등이 발생하지 않아 높은 내부양자효율의 확보가 가능하며, 이러한 장점을 바탕으로 고효율 특성을 갖는 발광다이오드(light-emitting diode) 및 고속 전자소자 등으로의 적용을 위한 연구가 활발히 수행 중 이다. 하지만, 무분극 GaN LED의 구현 시, GaN 박막의 비등방성 성장으로 인한 박막의 막질 저하와 함께 표면에 혼재하는 Ga층과 N층에서 기인되는 절연층의 생성으로 인한 오믹전극 형성의 어려움이 대두되고 있다. 따라서, 고효율의 무분극 GaN LED 구현을 위해서는 무분극 GaN층의 질소층 제거를 위한 표면처리 공정과 더불어 금속/무분극 GaN층 간 발생되는 쇼트키 장벽층의 높이(Schottky barrier height)를 제어하는 연구가 선행되어야 한다. 본 논문에서는 무분극 GaN LED 적용을 위한 n-형 전극물질 및 오믹조건 구현을 위한 금속/무분극 GaN층간 SBH의 제어방법에 대한 연구를 수행하였다.

• Journal of the Korea institute for structural maintenance and inspection
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• v.25 no.1
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• pp.93-102
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• 2021

This paper describes the process of developing a concrete median barrier of SB4 grade with anti-glare function. The development section has a height and width of 1,270mm and 560mm, respectively. A wire mesh is placed in the center of the cross section to improve the protection performance. Collision analysis predicted that this section satisfies the strength and occupant protection performance, and that no damage to the barrier occurs. In the actual collision test, it was confirmed that this section satisfies the strength and occupant protection performance. However, damage was observed on two concrete barrier when the truck crashed. In order to improve the accuracy of the collision analysis of the concrete barrier in the future, it is considered that a study on the model development and continuous collision analysis method for domestic commercial vehicles should be carried out.

• Asian-Australasian Journal of Animal Sciences
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• v.29 no.1
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• pp.134-141
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• 2016

To investigate the role of polysaccharide from Acanthopanax senticosus (ASPS) in preventing lipopolysaccharide (LPS)-induced intestinal injury, 18 mice (at 5 wk of age) were assigned to three groups with 6 replicates of one mouse each. Mice were administrated by oral gavage with or without ASPS (300 mg/kg body weight) for 14 days and were injected with saline or LPS at 15 days. Intestinal samples were collected at 4 h post-challenge. The results showed that ASPS ameliorated LPS-induced deterioration of digestive ability of LPS-challenged mice, indicated by an increase in intestinal lactase activity (45%, p<0.05), and the intestinal morphology, as proved by improved villus height (20.84%, p<0.05) and villus height:crypt depth ratio (42%, p<0.05), and lower crypt depth in jejunum (15.55%, p<0.05), as well as enhanced intestinal tight junction proteins expression involving occludin-1 (71.43%, p<0.05). ASPS also prevented intestinal inflammation response, supported by decrease in intestinal inflammatory mediators including tumor necrosis factor ${\alpha}$ (22.28%, p<0.05) and heat shock protein (HSP70) (77.42%, p<0.05). In addition, intestinal mucus layers were also improved by ASPS, as indicated by the increase in number of goblet cells (24.89%, p<0.05) and intestinal trefoil peptide (17.75%, p<0.05). Finally, ASPS facilitated mRNA expression of epidermal growth factor (100%, p<0.05) and its receptor (200%, p<0.05) gene. These results indicate that ASPS can prevent intestinal mucosal barrier injury under inflammatory conditions, which may be associated with up-regulating gene mRNA expression of epidermal growth factor and its receptor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.51-52
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• 2007

Built-in voltage in organic light-emitting diodes was studied using modulated photocurrent technique ambient conditions. From the bias voltage-dependent photocurrent, built-in voltage of the device is determined. The applied bias voltage when the magnitude of modulated photo current is zero corresponds to a built-in voltage. Built-in voltage in the device is generated due to a difference of work function of the anode and cathode. A device was made with a structure of anode/$Alq_3$/cathode to study a built-in voltage. ITO and ITO/PEDOT:PSS were used as an anode, and Al and LiF/AI were used as a cathode. It was found that an incorporation of PEDOT:PSS layer between the ITO and $Alq_3$ increases a built-in voltage by about 0.4V. This is consistent to a difference of a highest occupied energy states of ITO and PEDOT:PSS. This implies that a use of PEDOT:PSS layer in anode improves the efficiency of the device because of a lowering of anode barrier height. With a use bilayer cathode system LiF/Al, it was found that the built-in voltage increases as the LiF layer thickness increases in the thickness range of 0~1nm. For 1nm thick LiF layer, there is a lowering of electron barrier by about 0.2eV with respect to an Al-only device. It indicates that a very thin alkaline metal compound LiF lowers an electron barrier height.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.664-674
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• 2016

The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the space-charge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.362-366
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• 2018

Silicon carbide is widely used in power semiconductor devices owing to its high energy gap. In particular, Schottky barrier diode (SBD) and PiN diodes fabricated on 4H-SiC wafers are being applied to various fields such as power devices. The characteristics of SBD and PiN diodes can be extracted from C-V and I-V characteristics. The measured Schottky barrier height (SBH) was 1.23 eV in the temperature range of 298~473 K, and the average ideal factor is 1.17. The results show that the device with the Schottky contact is characterized by the theory of thermal emission. As the temperature increases, the parameters are changed and the Vth is shifted to lower voltages.

• Journal of Magnetics
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• v.9 no.1
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• pp.17-22
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• 2004

We studied the magnetotransport properties of tunnel junctions with AlO and AlN barriers fabricated using microwave-excited plasma. The plasma nitridation process provided wider controllability than the plasma oxidization for the formation of MTJs with ultra-thin insulating layer, because of the slow nitriding rate of metal Al layers, comparing with the oxidizing rate of them. High tunnel magnetoresistance (TMR) ratios of 49 and 44% with respective resistance-area product $(R{\times}A) of 3 {\times} 10^4 and 6 {\times} 10^3 {\Omega}{\mu}m^2$ were obtained in the Co-Fe/Al-N/Co-Fe MTJs. We conclude that AlN is a hopeful barrier material to realize MTJs with high TMR ratio and low $R{\times}A$ for high performance MRAM cells. In addition, in order to clarify the annealing temperature dependence of TMR, the local transport properties were measured for Ta $50{\AA} /Cu 200 {\AA}/Ta 50 {\AA}/Ni_{76}Fe_{24} 20 {\AA}/Cu 50 {\AA}/Mn_{75}Ir_{25} 100 {\AA}/Co_{71}Fe_{29} 40 {\AA}/Al-O$ junction with $d_{Al}= 8 {\AA} and P_{O2}{\times}t_{0X}/ = 8.4 {\times} 10^4$ at various temperatures. The current histogram statistically calculated from the electrical current image was well in accord with the fitting result considering the Gaussian distribution and Fowler-Nordheim equation. After annealing at $340^{\circ}C$, where the TMR ratio of the corresponding MTJ had the maximum value of 44%, the average barrier height increased to 1.12 eV and its standard deviation decreased to 0.1 eV. The increase of TMR ratio after annealing could be well explained by the enhancement of the average barrier height and the reduction of its fluctuation.