• 제목/요약/키워드: Height of barrier

검색결과 413건 처리시간 0.027초

An Investigation of the Effect of Schotky Barrier-Height Enhancement Layer on MSMPD Dynamic Characteristics

  • Seo, Jong-Wook
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권2호
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    • pp.141-146
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    • 2002
  • The effect of the wide-bandgap Schottky barrier enhancement cap layer on the performance of metal-semiconductor-metal photodetectors (MSMPD's) is presented. Judged by the dc characteristics, no considerable increase in recombination loss of carriers is resulted by the incorporation of the cap layer. However, about 45% of the detection efficiency is lost for the cap-layered MSMPD's even with a graded layer incorporated under pulse operation, and it was found to be due mainly to the capturing and slow release of the photocarriers at the heterointerface. The loss mechanism of the pulse detection efficiency is believed to be responsible for the intersymbol interference and the increased bit-error-rate (BER) observed in MSMPD's when used with a high bit rate pseudo-random-bit-stream (PRBS) data pattern.

대향 타겟 스퍼터링법으로 제작한 SiC SBD의 전기적 특성 (Electrical Characteristics of the SiC SBD Prepared by using the Facing Targets Sputtering Method)

  • 이진선;강태영;김경환
    • 반도체디스플레이기술학회지
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    • 제14권1호
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    • pp.27-30
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    • 2015
  • SiC based Schottky barrier diodes were prepared by using the facing targets sputtering method. In this research, 4H-SiC polytypes of SiC were adopted and Molybdenum, Titanium was employed as the Schottky metal of the metal-semiconductor contacts. Both structures showed the rectifying nature in their forward and reverse J-V characteristic curve and the ideality factors calculated from these plots that were close to unity were represented the nearly ideal behavior. Difference of Schottky barrier height between prepared devices was also corresponding with the electrical characteristics of themselves. Therefore the suitability of the facing targets sputtering method for fabrication of Schottky diodes could be suggested from these results.

건설 공사장 간이 소음 예측 프로그램 개발 (Development of Noise Prediction Program in Construction Sites)

  • 김하근;주시웅
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2007년도 춘계학술대회논문집
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    • pp.1157-1161
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    • 2007
  • A construction noise is the main reason for people's petition among the pollution. The purpose of this study is to develop the noise prediction program to see the level of the noise on the construction site more accurately. For this purpose, the database of the power level on the various equipments was made. The noise reduction by distance and the noise reduction by diffraction of barrier were mainly considered and calculated. The simple noise prediction program will provide the information about proper height and length of the potable barrier which satisfies noise criteria of the construction sites from a construction planning stage. To investigate the reliability of this program, the predicted data was compared with the measured data. An average of difference between measured data and predicted data is 1.3 dB(A) and a coefficient of correlation is about 0.95.

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고속열차(TGV) 주행시 연변에서의 소음예측 및 방음시설설계 (Noise Prediction and Design of Soundproof Facilities for the High Speed Train)

  • 나희승
    • 소음진동
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    • 제9권6호
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    • pp.1106-1115
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    • 1999
  • This paper sums up the study of the soundproof facilities (noise barriers) to be placed on the test track section within the Seoul-Pusan H.S.T. project. The objective of this study is to determine optimum design of soundproof including height, length, location, sound absorbing materials for test track(chonan-taejon). This paper shows the model to design the shape and materials of noise barrier for high speed trains(TGV, ICE, ect). The design of soundproof facilities is to be conducted by MITHRA for the prediction of noise impact of the TGV and for optimising noise barriers in order to reduce the noise generated by high speed trains. A number of computer simulations are carried out in order to determine the specification of noise barrier on test track.

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유전자 알고리즘을 이용한 음향 간섭 모델 최적화 설계 (The Study on the Optimum Design of Acoustic Interference Model by Genetic Algorithm)

  • 이재환;장강석
    • 한국해양공학회:학술대회논문집
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    • 한국해양공학회 2003년도 추계학술대회 논문집
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    • pp.18-23
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    • 2003
  • The Objective of this research is to find the optimal design of the Noise Reduction Interference Model (NRIM) which is recently invented. Without optimization, the NRIM has been successful to reduce the urban noise induced by trains and automobiles. While it is used with the barrier on the road, there is a strong desire to reduce noise more. Yet the only remedy is to make the barrier higher with cost increase. Therefore, the optimal design is necessary to reduce noise while maintaining the barrier height. More efficient Genetic Algorithm is used to find the optimal shape of NRIM with the reduction of noise lever up to 15 dB. also BEM is used to verify the optimal design results.

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철도전파소음저감을 위한 간섭장치의 성능평가 (The Evaluation of Interference Device for Noise Propagation of Railway)

  • 장강석;윤제원;김영찬;김두훈
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2001년도 추계학술대회 논문집
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    • pp.192-197
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    • 2001
  • Before we have made known the study of shape development of interference device for vehicle noise control. It's primary object greatly attenuate the noise due to transport vehicle by small products installed on the noise barrier edge. Also, it is able to improve the insertion loss of a noise barrier without increasing the height. The present time, we set up a newly manufactured products on the noise barrier edge and testify to it's the performance make use of an experiment and evaluation. In this paper the performance of noise barriers with attached newly developed products in terms of shape, absorptive material and split panel, are examined using field test.

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Direct writing 기법을 이용한 유기태양전지용 격벽 stamper 금형 제작 및 성형에 관한 연구 (Study on the stamper mold manufacture and molding of barrier ribs for polymer solar cells using direct writing method)

  • 황철진;김종선;홍석관;오정길;강정진
    • Design & Manufacturing
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    • 제2권6호
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    • pp.28-32
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    • 2008
  • Polymer solar cells are a type of organic solar cell (also called plastic solar cell), or organic photovoltaic cell that produce electricity from sunlight using polymers. It is a relatively novel technology, they are being researched by universities, national laboratories and several companies around the world. In this paper, stamping mold of barrier ribs for polymer solar cells was manufactured by lithography and electroforming which can control the height of pattern and 80nl of barrier ribs was manufactured by using hot embossing.

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소음저감 장치에 의한 KTX 차량의 운행소음 저감량 분석 (An analysis of the pass-by noise reduction for KTX by noise reduction device)

  • S. S. Jung;Kim, Y. T.;B. S. Jeon
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2002년도 추계학술대회논문초록집
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    • pp.376.1-376
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    • 2002
  • Reduction of the propagation noise generated during pass-by of KTX by noise barrier was measured and analysed fur the two kinds of top-shaped noise reduction devices; one as a plywood board and the other as a PVC pipe were placed periodically. The height and length of reference noise barrier are 2.4 m and 50 m, respectively. The noise reduction with and without noise reduction devices was investigated. (omitted)

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Erbium 실리사이드를 이용하여 제작한 n-형 쇼트키장벽 관통트랜지스터의 전기적 특성 (Characteristics of Erbium silicided n-type Schottky barrier tunnel transistors)

  • Moongyu Jang;Kicheon Kang;Sunglyul Maeng;Wonju Cho;Lee, Seongjae;Park, Kyoungwan
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.779-782
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    • 2003
  • The theoretical and experimental current-voltage characteristics of Erbium silicided n-type Schottky barrier tunneling transistors (SBTTs) are discussed. The theoretical drain current to drain voltage characteristics show good correspondence and the extracted Schottky barrier height is 0.24 eV. The experimentally manufactured n-type SBTTs with 60 nm gate lengths show typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about 10$^{5}$ at low drain voltage regime in drain current to gate voltage characteristics.

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Pr-첨가 ZnO 바리스터의 전기적 특성 (Electrical Properties of Pr-doped ZnO Varistors)

  • 곽민환;이상기;조성걸
    • 한국세라믹학회지
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    • 제34권12호
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    • pp.1275-1281
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    • 1997
  • ZnO varistors containing 5.0 at% Co3O4 and Pr6O11, ranging from 0.1 to 1.0 at%, were sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$. The I-V characteristics and nonlinear coefficients of the specimens were investigated with respect to Pr addition and sintering temperature. In general the specimens sintered at 130$0^{\circ}C$ showed better varistor characteristic than those fired at 135$0^{\circ}C$, which seemed to be related with the liquid phase formation during sintering. The barrier heights obtained from C-V relations, 0.29-1.36 eV, were different from those acquired using resistivity-temperature plots measured at low voltage per grain boundary. Therefore the estimation of potential barrier heights using C-V relations is better suited for the specimens prepared in this study. The carrier densities obtained using C-V relations were ~1018 cm-3.

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