• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.336-337
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• 2012

본 연구에서는 HMDS (400sccm)/$O_2$(20slm)/He(5slm)/Ar(10slm)의 가스를 사용하여 remote-type discharge와 direct-type discharge로 구성된 double discharge system을 이용하여 SiOx 박막을 증착시켰다. 특히, 본 연구는 frequency의 변화가 SiOx 박막의 특성과 plasma특성에 어떠한 영향을 미치는지 조사하였다.

• YAKHAK HOEJI
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• v.39 no.5
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• pp.480-486
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• 1995

The change in discharge current of a glow discharge has been shown the potential sensitive detector for gas chromatography. To investigate the effect of carrier gas on the electrical characteristics of the discharge and the peak response, the discharge pressure, gas flow rate, and discharge gap have been studied. The discharge gas included the Ar, He, and N$_{2}$. The gas flow rate has been found one of the important parameters to affect both the electrical characteristics and the peak response.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.732-737
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• 2000

Plasma enhanced chemical vapor deposition of $TiO_{2$\pm}{\delta}$ has been carried out using TEMAT [tetrakis(ethylmethylamido) titanium] and $H_2$. Increasing the power from 300 W to 500 W produced the high density plasma, leading to the formation of TiO$_2$films with an increased ratio of Ti to O and a negligible amount of C and N. Applying the bias of 30W to the substrate in creased the growth rate of the film with a slightly increased content of Ti in the film. In addition, $H_2O$ was from either the residual gas in the gase pressure or $H_2(/He)$ gas and actively participated in the formation of $TiO_2$ films. Consequently, Ti ions created in the plasma could be a main contributor to $TiO_2$ formation with a slight amount of $H_2O(~10^{-4}Toor)$ in the ambient, which provided the dissociation of TEMAT.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• Clinical and Experimental Pediatrics
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• v.58 no.3
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• pp.112-115
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• 2015

Hand, foot, and mouth disease (HFMD) is an acute, mostly self-limiting infection. Patients usually recover without any sequelae. However, a few cases are life threatening, especially those caused by enterovirus 71 (EV71). A 12-month-old boy was admitted to a primary hospital with high fever and vesicular lesions of the mouth, hands, and feet. After 3 days, he experienced 3 seizure episodes and was referred to our hospital. On admission, he was conscious and his chest radiograph was normal. However, 6 hours later, he suddenly lost consciousness and had developed a massive pulmonary hemorrhage that continued until his death. He experienced several more intermittent seizures, and diffuse infiltration of both lung fields was observed on chest radiography. Intravenous immunoglobulin, dexamethasone, cefotaxime, leukocyte-depleted red blood cells, fresh frozen plasma, inotropics, vitamin K, and endotracheal epinephrine were administered. The patient died 9 hours after intubation, within 3 days from fever onset. EV71 subgenotype C4a was isolated retrospectively from serum and nasopharyngeal swab by real-time reverse transcription-polymerase chain reaction. Here, we report a fatal case of EV71-associated HFMD with sudden-onset massive pulmonary hemorrhage and suspected encephalitis.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.221-221
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• 2014

The present work proposes an improved numerical simulator for design and modification of large area capacitively coupled plasma (CCP) processing chamber. CCP, as notoriously well-known, demands the tremendously huge computational cost for carrying out transient analyses in realistic multi-dimensional models, because electron dissociations take place in a much smaller time scale (${\Delta}t{\approx}10-8{\sim}10-10$) than time scale of those happened between neutrals (${\Delta}t{\approx}10-1{\sim}10-3$), due to the rf drive frequencies of external electric field. And also, for spatial discretization of electron flux (Je), exponential scheme such as Scharfetter-Gummel method needs to be used in order to alleviate the numerical stiffness and resolve exponential change of spatial distribution of electron temperature (Te) and electron number density (Ne) in the vicinity of electrodes. Due to such computational intractability, it is prohibited to simulate CCP deposition in a three-dimension within acceptable calculation runtimes (<24 h). Under the situation where process conditions require thickness non-uniformity below 5%, however, detailed flow features of reactive gases induced from three-dimensional geometric effects such as gas distribution through the perforated plates (showerhead) should be considered. Without considering plasma chemistry, we therefore simulated flow, temperature and species fields in three-dimensional geometry first, and then, based on that data, boundary conditions of two-dimensional plasma discharge model are set. In the particular case of SiH4-NH3-N2-He CCP discharge to produce deposition of SiNxHy thin film, a cylindrical showerhead electrode reactor was studied by numerical modeling of mass, momentum and energy transports for charged particles in an axi-symmetric geometry. By solving transport equations of electron and radicals simultaneously, we observed that the way how source gases are consumed in the non-isothermal flow field and such consequences on active species production were outlined as playing the leading parts in the processes. As an example of application of the model for the prediction of the deposited thickness uniformity in a 300 mm wafer plasma processing chamber, the results were compared with the experimentally measured deposition profiles along the radius of the wafer varying inter-electrode gap. The simulation results were in good agreement with experimental data.

• Proceedings of the KSME Conference
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• 2001.06d
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• pp.325-330
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• 2001

One of the principal components of the KSTAR (Korea Superconducting Tokamak Advanced Research) tokamak structure is the vacuum vessel, which acts as the high vacuum boundary for the plasma and also provides the structural support for internal components. Hyundai Heavy Industries Inc. has performed the engineering design of the vacuum vessel. Here the overall configuration of the KSTAR vacuum vessel was briefly described and then the design methodology and the analysis results were presented. The vacuum vessel consists of double walls, several ports, leaf spring style supports. Double walls are separated by reinforcing ribs and filled with baking/shielding water. The overall external dimensions of the main body are 3.39 m high, 1.11 m inner radius, 2.99 m outer radius, and made of SA240-316LN. The vacuum vessel was designed to be capable of achieving the base pressure of $1\times10^{-8}$ Torr, and also to be structurally capable of sustaining the vacuum pressure, the electromagnetic and thermal loads during plasma disruption and bakeout, respectively. The vacuum vessel will be baked out maximum $150^{\circ}C$ by hot pressurized water through the channels formed between double walls and the reinforcing ribs. A 3-D temperature distribution and the resulting thermal loads in the vessel were calculated during bakeout. It was found that the vacuum vessel and its supports were structurally rigid based on the thermal stress analysis. The maximum electromagnetic loads on the vacuum vessel induced by eddy and halo currents resulting from the engineering plasma radial and vertical disruption scenarios have been estimated. The stress analyses have been performed based on these electromagnetic loads and the resulting stresses at he critical locations of the vacuum vessel were within the allowable stresses.

• Journal of Welding and Joining
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• v.32 no.3
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• pp.27-33
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• 2014

This paper presents a brief summary on a relatively new plasma aided electrolytic surface treatment process for light metals. A brief discussion regarding the advantages, principle, process parameters and applications of this process is discussed. The process owes its origin to Sluginov who discovered an arc discharge phenomenon in electrolysis in 1880. A similar process was studied and developed by Markov and coworkers in 1970s who successfully deposited an oxide film on aluminium. Several investigation thereafter lead to the establishment of suitable process parameters for deposition of a crystalline oxide film of more than $100{\mu}m$ thickness on the surface of light metals such as aluminium, titanium and magnesium. This process nowadays goes by several names such as plasma electrolytic oxidation (PEO), micro-arc oxidation (MOA), anodic spark deposition (ASD) etc. Several startups and surface treatment companies have taken up the process and deployed it successfully in a range of products, from military grade rifles to common off road sprockets. However, there are certain limitations to this technology such as the formation of an outer porous oxide layer, especially in case of magnesium which displays a Piling Bedworth ratio of less than one and thus an inherent non protective oxide. This can be treated further but adds to the cost of the process. Overall, it can be said the PEO process offers a better solution than the conventional coating processes. It offers advantages considering the fact that he electrolyte used in PEO process is environmental friendly and the temperature control is not as strict as in case of other surface treatment processes.

• Physical Therapy Korea
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• v.6 no.3
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• pp.59-71
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• 1999

The purpose of this study was to determine the effect of varying levels of photobiostimulation treatment dosage on plasma ${\beta}$-endorphin concentration in humans. The subjects of this study were 21 healthy men and women, who were students of the Department of Physical Therapy, College of Health Science, Seonam University. This study was performed from October 26, 1998 to November 5, 1998. All subjects were assigned to one of three groups: a 2.0 $J/cm^2$ laser group, a 4.0 $J/cm^2$ laser group, an 6.0 $J/cm^2$ laser group. He-Ne laser (632.8 nm wave length) and infrared laser (820 nm wave length) of three different energy densities (2.0, 4.0, and 6.0 $J/cm^2$) were applied on the Su-Sam-Ri (L I 10) and Hab-Gog (L I 4) of acupuncture points. Blood samples were taken at pre-treatment, 30 min's post-treatment and 60 min's post-treatment. The level of ${\beta}$ endorphin was measured by radio immuno assay. The data were analyzed by descriptive statistics and repeated measure two-way ANOVA. The results of this study were as follows: 1) The human plasma ${\beta}$-endorphin concentrations were noted to significantly increase due to the energy densities of laser photobiostimulation (p<0.05). 2) The human plasma ${\beta}$-endorphin concentrations were noted to significantly increase during the period after laser photobiostimulation (p<0.05).

• Journal of the Korean institute of surface engineering
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• v.53 no.3
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• pp.124-129
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• 2020

This study is for the development of high temperature ALD SiO₂ film process, optimized for gap-fill process in manufacturing memory products, using a space-divided PE-ALD system equipped with an independent control dual plasma system and orbital moving unit. Space divided PE-ALD System has high productivity, and various applications can be applied according to Top Lid Design. But space divided ALD system has a limitation to realize concentric deposition map due to process influence due to disk rotation. In order to solve this problem, we developed an orbit rotation moving unit in which disk and wafer. Also we used Independent dual plasma system to enhance thin film properties. Improve productivity and film density for gap-fill process by having deposition and surface treatment in one cycle. Optimize deposition process for gap-fill patterns with different depths by utilizing our independently controlled dual plasma system to insert N₂and/or He plasma during surface treatment, Provide void-free gap-fill process for high aspect ratio gap-fill patterns (up to 50:1) with convex curvature by adjusting deposition and surface treatment recipe in a cycle.