• 센서학회지
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• 제7권4호
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• pp.225-233
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• 1998

$150^{\circ}C$정도의 높은 온도를 갖는 경우와 같은 열악한 환경 조건하에서의 기어 톱니의 회전수 검출을 위한 센서의 원리, 설계, 응용에 대하여 연구하였다. 톱니 바퀴의 회전의 검출을 위해 바이폴라 실리콘 공정에 의하여 SIMOX 기판위에 한 쌍의 Hall 소자들을 제조하여 차동검출방식을 사용하였다. 제작된 고온용 Hall 소자는 $-40^{\circ}C{\sim}150^{\circ}C$의 넓은 온도 영역을 지니며 동작영역에서의 적감도는 약 510 V/AT이었다. 차동 Hall 소자는 단일 Hall 소자를 사용할 때보다 넓은 온도 영역에 걸쳐 센서와 톱니 바퀴사이의 가능한 최대 거리를 보다 넓게 만들어 주었으며 최대 검출거리는 4mA 의 구동전류에서 약 4.5mm이었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 B
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• pp.819-821
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• 2001

This paper describes a characteristics of MFL according to the position of Hall sensor Magnetic Flux Leakage(MFL) Method is used to detect surface defect in ferromagnetic plate. A plate has a surface defect and magnetizing equipment are producted to perform Non-Destructive Testing(NDT) using MFL. The SM 45C carbon steel plate is adopted to this experiment. there is a artifical defect with a twice of thickness and a half of depth of plate. Magnetizing equipment is composed of yoke made by layer-built of silicon sheet steel, NdFeB magnetic and iron brushes. Detecting defect is performed by MFL NDT using Hall sensor. It is shown that magnetic flux detected by Hall sensor is affected according to the position of Hall sensor through MFL experiment and numerical analysis.

• 센서학회지
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• 제25권5호
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• pp.310-319
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• 2016

Three types of gap sensors, a capacitive gap sensor, an eddy current gap sensor, and a Hall effect gap sensor are described and evaluated through experiments for the purpose of precise gap sensing for micrometer scale movement, and a novel type of differential hall effect gap sensor is proposed. Each gap sensor is analyzed in terms of resolution and environment dependency including temperature dependency. Furthermore, a transport system for AMOLED deposition is introduced as a typical application of gap sensors, which are recently receiving considerable attention. Based on the analyses, the proposed differential Hall effect gap sensor is found to be the most suitable gap sensor for precise gap sensing, especially for application to a transport system for AMOLED deposition. The sensor shows resolution of $0.63mV/{\mu}m$ for the overall range of the gap from 0 mm to 2.5 mm, temperature dependency of $3{\mu}m/^{\circ}C$ from $20^{\circ}C$ to $30^{\circ}C$, and a monotonic characteristic for the gap between the sensor and the target.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.514-519
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$as a dielectrical isolation layer a SDB SOI Hall sensor without pn junction has been fabricated on the Si/ $SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to 30$0^{\circ}C$ the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm$6.7$\times$10$_{-3}$ and $\pm$8.2$\times$10$_{-4}$$^{\circ}C$ respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.29-33
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Journal of Power Electronics
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• 제18권3호
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• pp.714-722
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• 2018

This paper presents a wide-range speed control scheme of brushless DC (BLDC) motors based on a hall sensor with separated low- and normal-speed controllers. However, the use of the hall sensor signal is insufficient to detect motor speed in the low-speed region because of low sensor resolution and time delay. In the proposed method, a micro-stepping current control method according to the torque angle variation is presented. In this mode, the motor current frequency and rotating angle are determined by the reference speed without the actual speed fed by the hall sensor. The detected torque angle is used to adjust the current value in a limited band to control the current value in accordance with the load. The torque angle is detected exactly at the changing point of the hall sensor signal. The rotor can follow the rotating flux with the variable torque angle. In a normal speed range, the conventional vector control scheme is used to control the motor current with a PI speed controller using the hall sensor. The torque characteristics are analyzed on the basis of the back EMF and current shape. To adopt the vector control scheme, the continuous rotor position is estimated by the measured speed and hall sensor position. At the mode changing point between low and normal speed range, the proper initial current command and reference rotor position are calculated. The calculated current command can reduce the torque ripple during transient mode. The proposed method is simple but effective in extending the speed control range of a conventional BLDC motor with hall sensor without the need for a high-resolution encoder. The effectiveness of the proposed method is verified by various experiments on a practical BLDC motor.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.2058-2062
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• 2005

This article describes the useful way to measure the torque and RPM of the geared motor. For this, we have made the planetary geared reduction motor including the torque sensor unit which consists of hall effects sensor and permanent magnet. Our monitoring system displays the sensing values (torque, rpm) and the calculated value (power) and it also has the network capability using the Bluetooth protocol. We will show that our solution is much more inexpensive and simple method to measure torque and rpm than before.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.73-76
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• 2002

In this paper we present an integrated Hail sensor It for fan motors, fabricated in industrial bipolar process. As a discrete Hall sensor and signal processing circuitry In the fan motor system were Integrated into single chip a temperature dependence of Hall sensitivity and Hall offset voltage can be compensated and cancelled by on-chip circuitry. We Propose a novel temperature compensation of Hall sensitivity with negative temperature coefficient (TC) using the differential amplifier gain with Positive TC. After a package of the chip was sealed using a plastic Package 20 Pins, the thermal and magnetic characteristics were investigated. The obtained experimental results are in agreement with analytical predictions and have more excellent performance than\ulcorner conventional the fan motor system using discrete Hall sensor.

• 센서학회지
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• 제29권5호
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• pp.283-292
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• 2020

Current sensors that use a Hall element and Hall IC to measure the magnetic fields generated in steel silicon core gaps do not distinguish between direct and alternating currents. Thus, they are primarily used to measure direct current (DC) in industrial equipment. Although such sensors can measure the DC when installed in expensive equipment, ascertaining problems becomes difficult if the equipment is set up in an unexposed space. The control box is only opened during scheduled maintenance or when anomalies occur. Therefore, in this paper, a method is proposed for facilitating the safety management and maintenance of equipment when necessary, instead of waiting for anomalies or scheduled maintenance. A Bluetooth 4.0 low-energy current-sensor system based on near-field communication is used, which compensates for the nonlinearity of the current-sensor output signal using a piecewise linear model. The sensor is controlled using its generic attribute profile. Sensor nodes and cell phones used to check the signals obtained from the sensor at 50-A input currents showed an accuracy of ±1%, exhibiting linearity in all communications within the range of 0 to 50 A, with a stable output voltage for each communication segment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.565-568
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm 6.7$$\times$$10^{-3}$/$^{\circ}C$ and $\pm 8.2$$\times$$10^{-4}$/$^{\circ}C$respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and hip high-temperature operation.