• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.318.1-318.1
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• 2016

Hafnium Oxide (HfOx) has been attracted as a promising gate dielectric for replacing SiO2 in gate stack applications. In this paper, Metal-Oxide-Semiconductor (MOS) capacitor with solution processed HfO2 high-k material as a dielectric were fabricated. The solvent using $HfOCl2{\cdot}8H2O$ dissolve in 2-Methoxy ethanol was prepared at 0.3M. The HfOx layers were deposited on p-type silicon substrate by spin-coating at $250^{\circ}C$ for 5 minutes on a hot plate and repeated the same cycle for 5 times, followed by annealing process at 350, 450 and $550^{\circ}C$ for 2 hours. When the annealing temperature was increased from 350 to $550^{\circ}C$, capacitance value was increased from 337 to 367 pF. That was resulted from the higher temperature of HfOx which have more crystallization phase, therefore dielectric constant (k) was increased from 11 to 12. It leads to the formation of dense HfOx film and improve the ability of the insulator layer. We confirm that HfOx layer have a good performance for dielectric layer in MOS capacitors.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.237.2-237.2
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• 2016

A pure hafnium-carbide (HfC) coating layer was deposited onto carbon/carbon (C.C) composites using a vacuum plasma spray system. By adopting a SiC buffer layer, we successfully integrated C.C composites with a $100-{\mu}m-thick$ protective coating layer of HfC. Compared to the conventional chemical vapor deposition process, the HfC coating process by VPS showed increased growth rate, thickness, and hardness. The growth behavior and morphology of HfC coatings were investigated by FE-SEM, EDX, and XRD. From these results, it was shown that the addition of a SiC intermediate layer provided optimal surface conditions during the VPS procedure to enhance adhesion between C.C and HfC (without delamination). The thermal ablation test results shows that the HfC coating layer perfectly protected inner C.C layer from thermal ablation and oxidation. Consequently, we expect that this ultra-high temperature ceramic coating method, and the subsequent microstructure that it creates, can be widely applied to improve the thermal shock and oxidation resistance of materials under ultra-high temperature environments.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.209-212
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• 2011

Hafnium nitride (HfN) thin films were deposited onto a silicon substrate by inductive coupled nitrogen plasma-assisted radio frequency magnetron sputtering. The films were prepared without intentional substrate heating and a substrate negative bias voltage ($-V_b$) was varied from -50 to -150 V to accelerate the effects of nitrogen ions ($N^+$) on the substrate. X-ray diffractometer patterns showed that the structure of the films was strongly affected by the negative substrate bias voltage, and thin film crystallization in the HfN (100) plane was observed under deposition conditions of -100 $V_b$ (bias voltage). Atomic force microscopy results showed that surface roughness also varied significantly with substrate bias voltage. Films deposited under conditions of -150 $V_b$ (bias voltage) exhibited higher hardness than other films.

• Bulletin of the Korean Chemical Society
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• v.29 no.1
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• pp.94-98
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• 2008

A fundamental study was developed concerning the novel solvent extraction of the tetravalent metal ions; zirconium(IV), hafnium(IV) and thorium(IV). Their extraction behavior in toluene was investigated with a recently synthesized naphthol-derivative Schiff base, 1-({[4-(4-{[(E)-1-(2-hydroxy-1-naphthyl)methyliden]amino}phenoxy) phenyl]imino}methyl)-2-naphthol (HAPMN). The spectrophotometrical examination of the complex formation between HAPMN and the Zr(IV), Hf(IV) and Th(IV) ions in acetonitrile revealed the formation of stable 1:1 complexes in the solution. After the thorium extraction in toluene, it was found that [Th(OH)3HA] was the respective deriving substance. While, in the case of zirconium and hafnium extraction, the extracted adduct was found to be [M4(OH)8(H2O)16Cl62HA]. The stoichiometric coefficients of these extracted species were determined by the slope analysis method. The extraction reaction followed a cation exchange mechanism.

• Corrosion Science and Technology
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• v.2 no.1
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• pp.53-57
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• 2003

The MarM247 based superalloy (8wt.%Cr- 9wt.%Co- 3wt.%Ta- 1.5wt.%Hf- 5.6%wt.Al- 9.5wt.%W- Bal. Ni) specimens were diffusion aluminized by for types of pack cementation methods, and their coating structure and their high temperature oxidation resistance were investigated. The coated specimens treated at 973K in high aluminum concentration pack had a coating layer containing large hafunium rich precipitates, which were originally included in substrate alloy. After the high temperature oxidation test in air containing 30 vol.% $H_2O$ at 1273K ~ 323K, the deep localized corrosion which reached to the substrate were observed along with these hafnium rich precipitates. On the other hand, the coated specimens treated at 1323K using low aluminum concentration pack showed the coating layer without the large hafunium rich precipitates, and after the high temperature oxidation test at 1273K for 1800 ksec, it did not show the deep localized corrosion. The nickel electroplating before the aluminizing forms thick hafnium free area, and its high temperature oxidation resistance were comparable to platinum modified aluminizing coatings at 1273K.

• Corrosion Science and Technology
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• v.11 no.5
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• pp.191-195
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• 2012

The aim of this study was to investigate effects of hafnium content on the corrosion behavior of Ti alloys in electrolyte containing chloride ion. For this study, Ti-Hf binary alloys contained 10 wt%, 20 wt% and 30 wt% Hf were manufactured in a vacuum arc-melting furnace and subjected to heat treatment for 12h at $1000^{\circ}C$ in an argon atmosphere. The pitting corrosion behavior of the specimens was examined through potentiodynamic and potentiostatic tests in 0.9 wt% NaCl electrolyte at $36.5{\pm}1^{\circ}C$. The corrosion morphology of Ti-xHf alloys was investigated using optical microscopy (OM) and X-ray diffractometer (XRD). From the optical microstructures and XRD results, needle-like martensite ($\alpha$') phases of the Ti-xHf alloys increased with an increase of Hf addition. Corrosion current density $(I_{corr})$ and current density $(I_{300mV})$ in passive region decreased, whereas, corrosion potential increased with Hf content. At the constant potential ($300mV_{SCE}$), current density decreased as time increased.

• Korean Journal of Materials Research
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• v.30 no.2
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• pp.99-104
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• 2020

Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO₂) have led to the expectation that HfO₂ could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO₂ thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO₂-based MFM capacitors by applying various ferroelectric switching characteristics models.

• Korean Journal of Materials Research
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• v.7 no.7
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• pp.592-596
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• 1997

LI$_{2}$형 결정구조를 갖는 Ni-20at.%AI-10at%Fe 금속간화합물에 boron, zirconium 과 hafnium을 최고 0.5at.% 까지 첨가하여 항복강도, 연성, 파괴 등 기계적 성질의 변화를 인장시험과 X선분석 및 XPS분석 등을 통하여 관찰하였다. Ni-20at.% AI-10at.% Fe금속간화합물에 boron을 첨가하였을 때는 연신율의 현저한 증가가 나타났으나 zirconium이나 hafnium첨가의 경우에는 별다른 효과가 나타나지 않았다. Ni-20at.%AI-10at%Fe 금속간화합물의 경우, boron의 양이 증가할수록 인장연신율이 증가하였으며 0.1at.%의 boron을 첨가한 경우 최고 48.5%의 상온인장연신율을 나타내었다. 첨가물을 넣지 않은 경우와 zirconium과 hafnium을 첨가한 경우, 파괴모드는 입계파괴의 형태를 나타내었으나 boron을 첨가한 경우에는 파괴모드가 입계파괴에서 입내파괴로 변화되었다. XPS분석을 통하여 boron이 입계에 편석된 것을 관찰할 수 있었으며 이는 이미 제시된 여러가지 해석들과 일치하는 결과이다. 이로부터 boron의 첨가에 따른 인장연신율의 증가는 boron의 입계편석거동과 관련이 있음을 알 수 있다.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.263-267
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• 2007

Hafnium oxide $(HfO_2)$ films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at $250^{\circ}C$ using TEMAH [tetrakis(ethylmethylamino)hafnium] and $O_2$ plasma. $(HfO_2)$ films showed a relatively low carbon contamination of about 3 at %. As-deposited and annealed $(HfO_2)$ films showed amorphous and randomly oriented polycrystalline structure. respectively. The interfacial layer of $(HfO_2)$ films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of $(HfO_2)$ films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of $(HfO_2)$ films. $(HfO_2)$ films deposited by remote PEALD using TEMAH and $O_2$ plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.111-120
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• 1993

Abstract In this study, the Mo-Hf-O ingots containing 0.31-1.14at % Hf and 0.08-1.00at % 0 were prepared by plasma arc melting. The change of microstructure depending on the condition of heat treatmen~ was analysed by optical microscophy, auger electron microscophy, and transmission electron microscophy. Molybdenum powder with the oxygen content of 830ppm was compacted, and then melted. The oxygen content of molybdenum ingots was detected to be 40 -130ppm. As the contents of Hf and 0 increased, the grain size of ingots decreased. When molybdenum igot containing l.14at % Hf and 1.00at % C was heat treated, p-molybdenum carbide in grains was transformed into ${\alpha}$-molybdenum carbide at 130$0^{\circ}C$. Between 140$0^{\circ}C$ and 150$0^{\circ}C$, the precipitation of hafnium carbide was due to the reaction of solute Hf and C, and the hafnium carbide was saturated at grain boundaries at 150$0^{\circ}C$. When the sample was heat treated from 150$0^{\circ}C$ to 170$0^{\circ}C$, Hafnium oxide more stable thermodynamically precipitated both at grain boundaries and in grains after hafnium carbide had been dissolved at grain boundaries.