• 조명전기설비학회논문지
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• 제28권8호
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• pp.40-46
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• 2014

The development of the superconducting fault current limiter (SFCL) to apply into a power transmission system where makes larger fault current compared to the power distribution system has been performed. Among various SFCLs, the trigger-type SFCL is suitable for application into the power transmission system due to the effective reduction on power burden of the high temperature superconducting element (HTSC) for the larger fault current. To protect the power transmission line in the power grid, the distance relay, which decides to interrupt fault section where can be calculated by the measured voltage and current from sound grid, is one of important protective devices in the power transmission system. However, the operation of the distance relay from the impedance of the fault point on the transmission line is affected by the impedance of the trigger-type SFCL. Therefore, the analysis on the operational characteristics of distance relay considering the application of the SFCL is required. In this paper, the effect on the operation zones of the distance relay by the impedance of the SFCL in a power transmission system was analyzed through the PSCAD/EMTDC simulation.

• 조명전기설비학회논문지
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• 제21권2호
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• pp.94-98
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• 2007

자속구속형 초전도 사고전류 제한기는 평상시 자기적인 결합에 의해 철심의 히스테리시스 손실이 발생하지 않는 특징이 있다. 그러나 사고시에는 사고전류증가로 인해 고온초전도 소자의 저항발생과 함께 철심의 포화가 발생할 경우 제한기의 사고전류제한 특성을 저하시키는 현상이 발생하게 된다. 따라서 본 논문에서는 이를 분석하고 억제하기 위한 설계방안을 도출하기 위해 자속구속형 고온초전도 사고전류 제한기의 구성요소인 자속구속 리액터의 히스테리시스 특성을 고려한 사고전류 제한특성을 분석하였다. 이를 위해 제한기의 등가회로와 사고전류 제한실험으로부터 히스테리시스 곡선을 도출하였다. 1, 2차권선의 인덕턴스 비에 따른 히스테리시스 곡선으로부터 인덕턴스비가 증가함에 따라 제한되는 사고전류크기는 증가한 반면 사고시 자속구속형 사고전류제한기의 구성요소인 철심의 포화가 억제됨을 확인할 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제9권1호
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• pp.18-23
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• 1996

The molding pressure is also one of the important parameters in the preparation of HTSC materials by the solid state reaction method. In the present study, changes in structural, electrical and microstructural proper-ties with the molding pressure in YiB $a_{2}$C $u_{3}$ $O_{70{\delta}}$ superconductors have been performed. The investigated molding pressures were 0.5*10$^{3}$ N/c $m^{2}$, 1*10$^{3}$ N/c $m^{2}$, 2*10$^{3}$ n/c $m^{2}$ and 4*10$^{3}$ N/c $m^{2}$. As the molding pressure increased, the anisotropy of the crystal structure decreased and the grains have been grown preferentially in a c-axis direction. Since the size of the grain becomes larger with the decrease of the porosity, denser textures are formed. The results indicated that the critical current density is improved resulting from the enhanced densification due to higher molding pressure. When the molding pressure was between 1*10$^{3}$ N/c $m^{2}$ and 2*10$^{3}$ N/c $m^{2}$, while it did not affect the oxygen deficiency and Tc, the increase of the molding pressure affects remarkably on grain size and densification of the $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-{\delta}}$. When the molding pressure is larger than 2*10$^{3}$ N/c $m^{2}$, electrical proper-ties are independent on the molding pressure..