• Title/Summary/Keyword: HPEM(High Power Electromagnetics)

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The Susceptibility of Electronic Circuits inside the Cavity by HPEM(High Power Electromagnetics) Environment (금속 함체내부로 입사되는 고출력 전자기 펄스에 대한 전자회로의 민감성 분석)

  • Hwang, Sunl-Mook;Kwon, Hae-Ok;Huh, Chang-Su;Choi, Jin-Soo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.12
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    • pp.1892-1897
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    • 2012
  • Modern electronic circuits are of importance for the function of communication, traffic systems and security systems. An intentional threat to these systems could be of big casualties and economic disasters. This study has examined susceptibility of electronic circuits inside the cavity by HPEM(High Power Electromagnetics). The UWB measurements were done at an anechoic chamber using a RADAN voltage source, which can generate a transient impulse of about 200 kV. The HPEM wave penetrated inside the metal case appeared to the long damped ringwave of pulse length compared with the incident wave. In addition, the resonant frequency generated inside the metal case occurred primarily in the range of 1~3 GHz. The frequency band of 1~3 GHz was influenced on the electronic circuit, which was confirmed by an external antenna and an internal absorber. The electronic circuit was influenced by HPEM infiltrated into the cavity at the 86 kV/m out of the metal cases. Also in case of an absorber the susceptibility of an electronic circuit was smallest among other cases(aperture, antenna). It is considered that absorber has a function absorbing electromagnetic wave infiltrated into the cavity and simultaneously limiting resonance by varying a boundary condition inside the cavity. Based on the results, electronic equipment systems could be applied to protection that has suited system requirements.

The Sensitivity of the Parameters of Microcontroller Device with Coupling Caused by UWB-HPEM (Ultra Wideband-High Power Electromagnetics) (광대역 고출력 전자기 펄스에 의한 마이크로컨트롤러 소자의 매개변수들의 민감성 분석)

  • Hwang, Sun-Mook;Hong, Joo-Il;Huh, Chang-Su
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.2
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    • pp.369-373
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    • 2010
  • Modem electronic circuits are of importance for the function of communication, traffic systems and security systems. An intentional threat to these systems could be of big casualties and economic disasters. This paper has shown damage effect of microcontroller device with coupling caused by UWB-HPEM(Ultra Wideband-High Power Electromagnetics). The UWB measurements were done at an Anechoic Chamber using a RADAN UWB voltage source, which can generate a transient impulse of about 180 kV. The susceptibility level for microcontroller has been assessed by effect of various operation line lengths. The results of susceptibility analysis has showed that the effect of the reset line length on the MT(Ma1function Threshold) is larger than the effect of the different line length(Data, Power, Clock). With the knowledge of these parameters electronic system can be designed exactly suitable concerning the system requirements. Based on the results, susceptibility of microcontroller can be applied to protection plan to elucidate the effects of microwaves on electronic equipment.

A Study on Malfunction Mode and Failure Rate Properties of Semiconductor by Impact of Pulse Repetition Rate (펄스 반복률에 의한 반도체 소자의 오동작 모드와 고장률에 관한 연구)

  • Park, Ki-Hoon;Bang, Jeong-Ju;Kim, Ruck-Woan;Huh, Chang-Su
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.6
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    • pp.360-364
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    • 2015
  • Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the electronic systems developed. If the electronic systems are exposed to HPEM (high power electromagnetics), the systems will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductors are vulnerable to external stress factor such as the coupled electromagnetic pulse. Therefore, we will discuss about malfunction behavior and DFR (destruction failure rate) of the semiconductor caused by amplitude and repetition rate of the pulse. For this experiment, the pulses were injected into the pins of general purpose IC due to the fact that pulse injection test enables the phenomenon after the HPEM is coupled to power cables. These pulses were produced by pulse generator and their characteristics are 2.1 [ns] of pulse width, 1.1 [ns] of pulse rise time and 30, 60, 120 [Hz] of pulse repetition rate. The injected pulses have changed frequency, period and duty ratio of output generated by Timer IC. Also, as the pulse repetition rate increases the breakdown threshold point of the timer IC was reduced.