• Journal of the Korea Society of Computer and Information
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• v.9 no.1
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• pp.9-15
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• 2004

New WSW(Wrap Side Wall) is proposed to decrease junction electric field in this paper. WSW process is fabricated after first gate etch, followed NM1 ion implantation and deposition & etch nitride layer. New WSW structure has buffer layer to decrease electric field. Also we compared the hot carrier characteristics of WSW and conventional. Also, we design a test pattern including pulse generator, level shifter and frequency divider, so that we can evaluate AC hot carrier degradation on-chip. It came to light that the universality of the hot carrier degradation between DC and AC stress condition exists, which indicates that the device degradation comes from the same physical mechanism for both AC and DC stress. From this universality, AC lifetime under circuit operation condition can be estimated from DC hot carrier degradation characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.586-591
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• 2004

We studied the dependence of hot-tarrier-induced degradation characteristics on nitrogen concentration in NO(Nitrided-Oxide) gate of nMOS, under ac and dc stresses. The $\Delta$V$_{t}$ and $\Delta$G$_{m}$ dependence of nitrogen concentration were observed, We observed that device degradation was suppressed significantly when the nitrogen concentration in the gate was increased. Compared to $N_2$O oxynitride, NO oxynitride gate devices show a smaller sensitivity to ac stress frequency. Results suggest that the improved at-hot carrier immunity of the device with NO gate may be due to the significantly suppressed interface state generation and neutral trap generation during stress.ess.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.1-5
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• 2000

Properties of AC applied hot pressed ($Pb_{1-x}Sn_{x}$) Te thermoelectrics were investigated. Mechanical alloying process used to produce alloyed powder to reduce the inhomogeneity and to avoid vaporization of constituents. It showed an increase in the mechanical alloying time with increasing of Sn contents in ($Pb_{1-x}Sn_{x}$)Te. ($Pb_{1-x}Sn_{x}$)Te were sintered at 873 to 923K for 1-4 minutes, under 150 kgf/$\textrm{cm}^2$ by AC applied hot pressng method. The short sintering time of AC applied hot pressing process could reduce the vaporization of Te. The density of ($Pb_{1-x}Sn_{x}$) Te was more dependent on the sintering temperature than the sintering time. The p-n transition was observed at x=0.1 but only p type conduction behavior was observed at more than 20 mol% of Sn compositions. The maximum value of Seebeck coefficient is 250 $\mu$V/K for x=0.2 at 500K. As the amount of Sn increases, the peak value of Seebeck coefficient drops and shifts to higher temperature and the peak value of electrical conductivity decreased with increasing temperature.

• Journal of Adhesion and Interface
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• v.4 no.2
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• pp.21-29
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• 2003

Hot AC anodising has been evaluated us pre-treatment for aluminium prior to structural adhesive bonding. Phosphoric and sulphuric acid hot AC anodising showed very promising adhesion promoter capabilities with durability comparable with the best standard DC anodising procedures. AC anodising does not required etching prior to anodising and offers u pre-treatment time down to 20 seconds. The interface/interphase between the aluminium substrate and the adhesive was investigated in order to get a better understanding of the involved adhesion mechanisms and to explain the long-tenn properties. The alkaline medium formed at the oxide layer/adhesive interface has been shown to induce a partial dissolution of the oxide layer leading to the formation of metallic ions which diffuse in the adhesive (EPMA measurements). The effect of diffusion of the Al ions on adhesion and joint durability is still uncertain but studies showed that pre-bond moisture affected the joints durability and to some extent the diffusion length. specially for DC anodised samples. So far no direct correlation could be established between the diffusion length d and the joints durability but new trials with better control over the elapsed time between bonding and adhesive curing are expected to help getting a better understanding of the involved mechanisms.

• Composites Research
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• v.33 no.2
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• pp.76-80
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• 2020

In this study, vacuum bag hot-press (V-HP) process can be used as an out-of-autoclave (OOA) process by improving the inefficient process of the autoclave forming method with excellent physical properties and surface quality. A carbon fiber composite was molded via V-HP process and analyzed the physical properties and microstructures between composites manufactured by autoclave (AC) process and hot-press process (HP). The tensile strength of the composite materials using the V-HP process was 320.6 MPa and the AC process samples found to be substantially close to the tensile strength of 335.3 MPa. As a result of confirming the surface quality of the composite material using SEM, it was confirmed that in the V-HP process, the removal state of pores due to volatile solvent in the resin was slightly lower than that of the AC process, but it had a considerably superior surface compared to the HP process.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.110.1-110
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• 2000

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.5B no.2
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• pp.181-188
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• 2005

In this paper, a DC smoothing filterless soft switching pulse modulated high frequency AC power conversion circuit connected to utility. frequency AC power source is proposed for consumer induction heating hot water producer, steamer and super heated steamer. The operating principle of DC link filterless utility frequency AC-high frequency AC (HF AC) power conversion circuit defined as high frequency cycloinverter is described, which can operate under a principle of ZVS/AVT and power regulation based on alternate asymmetrical PWM in synchronization with the utility frequency single phase AC positive or negative half wave voltage. The dual mode modulation control scheme based on high frequency PWM and commercial frequency AC voltage PDM for the proposed high frequency cycloinverter are discussed to enlarge its soft switching commutation operating range for wide HF AC power regulation. This high frequency cycloinverter is developed for high frequency IH Dual Packs Heater (DPH) type boiler used in consumer and industrial fluid pipeline systems. Based on the experiment and simulation results, this high frequency cycloinverter is proved to be suitable for the consumer use IH-DPH boiler and hot water producers. The cycloinverter power regulation and power conversion efficiency characteristics are evaluated and discussed.

• Journal of Korea Foundry Society
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• v.36 no.2
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• pp.67-74
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• 2016

The effects of scrap content on the hot tearing property and tensile property were investigated in AC2BS alloy. The hot tearing strengths were $16.4kgf/cm^2$, $15.2kgf/cm^2$, $14.9kgf/cm^2$ and $13.3kgf/cm^2$, respectively, under the constant solid fraction of 29.3% when the scrap contents of the specimens were 0%, 20%, 35% and 50%. In the same way, tensile strengths of the as-cast condition were $24.5kgf/mm^2$, $23.7kgf/mm^2$, $17.3kgf/mm^2$ and $16.0kgf/mm^2$, respectively, and the corresponding tensile strengths of the T6 heat treatment condition were $27.2kgf/mm^2$, $26.7kgf/mm^2$, $24.2kgf/mm^2$ and $23.9kgf/mm^2$. Hot tearing strength and tensile strength decreased as scrap content of the specimen increased. According to the evaluation of the quantitative hot tearing and tensile test results, the decrease of these strengths is due to the presence of oxide films which act as crack initiation site of the specimens. Therefore, elimination of oxide films of aluminum melt to maintain melt cleanliness is required.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.13-18
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• 2007

This paper presents the experimental findings on the different degradation mechanism which depends on the gate oxide thickness in lateral DMOS transistors. For thin oxide devices, the generation of interface states in the channel region and the trapped holes in the drift region is found to be the causes of the device degradation. For thick devices, the generation of interface states in the channel region is found to be the causes of the device degradation. We confirmed the different degradation mechanism using device simulation. From the comparison of device degradation under DC and AC stress, it is found that the device degradation is more significant under DC stress than one under AC stress. The device degradation under AC stress is more significant in high frequency. Therefore the hot carrier induced degradation should be more carefully considered in the design of RF LDMOS transistors and circuit design.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.93-102
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• 1994

This paper, presents SECRET(SEC REliability Tool), which predicts reliability problems related to the hot-carrier and electromigration effects on the submicron MOSFETs and interconnections. To simulate DC and AC lifetime for hot-carrier damaged devices, we have developed an accurate substrate current model with the geometric sensitivity, which has been verified over the wide ranges of transistor geometries. A guideline can be provided to design hot-carrier resistant circuits by the analysis of HOREL(HOT-carrier RFsistant Logic) effect, and circuit degradation with respect to physical parameter degradation such as the threshold voltage and the mobility can also be expected. In SECRET, DC and AC MTTF values of metal lines are calculated based on lossy transmission line analysis, and parasitic resistances, inductances and capacitances of metal lines are accurately considered when they operate in the condition of high speed. Also, circuit-level reliability simulation can be applied to the determination of metal line width and-that of optimal capacitor size in substrate bias generation circuit. Experimental results obtained from the several real circuits show that SECERT is very useful to estimate and analyze reliability problems.