• Journal of Astronomy and Space Sciences
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• v.24 no.1
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• pp.45-54
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• 2007

The relationship between the Galactic magnetic field strength and the gas density has been revisited. A synchrotron continuum emission data at 408 MHz and HI column density provide a good data for such study. But it is difficult to separate the synchrotron emission from the observed 408MHz radio emission, because the 408MHz radio emission has the component from the HI layer, as well as many components from other origins. We have tried to substract the component which is probably not related with HI layer, and present the results. We show that the method presented here is a more refined method than that of Brown & Chang (1983, hearafter BC83) to find the above mentioned relationship, and discuss the existence of such relationship in our Galaxy.

• Journal of Power System Engineering
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• v.17 no.4
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• pp.109-114
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• 2013

In this study, the microstructure, mechanical properties and high temperature oxidation characteristics of HiSiMo and HiSiMoM ductile iron for exhaust manifold were investigated. The HiSiMoM ductile iron was developed by optimization of alloying element addition and casting design. The exhaust manifold prototype was fabricated using the HiSiMoM iron and this resulted in the weight saving of 0.73kg. The microstructures of the HiSiMo and HiSiMoM irons were similar each other and graphite nodularity was 89% and 93% respectively. Tensile strengths of them were 663.5 and 674.4 MPa and Brinell hardness were 235.3 and 243.9 respectively. Both irons showed parabolic weight gain behavior in high temperature oxidation atmosphere. Oxidation layer was divided into external and internal layers. The weight gain of the HiSiMoM iron was lower than that of the HiSiMo iron after isothermal oxidation test at $900^{\circ}C$. This should be rationalized by higher Si enrichment at the interface of the matrix and internal layer of the HiSiMoM iron.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.18 no.12
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• pp.1310-1316
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• 2008

Bi-layer and tri-layer structures of electro-active paper(EAPap) using conductive polyaniline(PANI) coating were investigated to improve bending displacement of cellulose EAPap. Two different counter ions, perchlorate($CIO_4^-$) and tetrafluoroborate($BF_4^-$), are used as dopant ions in the PANI processing. The actuation performances of hi-layer and tri-layer structure are evaluated in terms of tip displacement, blocked force, strain energy density and power output density. The actuation performance of the tri-layer actuator was better than the hi-layer structure, and the maximum displacement and blocked force of tri-layer $CIO_4^-$ doped-PANI-EAPap were 13.2 mm and 0.15 mN, respectively. Also the power output of the actuator is similar to the required power of biological muscle application.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Korean Journal of Veterinary Service
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• v.27 no.1
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• pp.81-87
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• 2004

This study was conducted to investigate the similarity between hemagglutination inhibition (HI) test and enzyme-linked immunosorbent assay(ELISA), the HI titer and mean ratio S/P ratio) of avian influenza virus. To perform this study, the 1,457 sera of layers 21 farms in May, July and September, respectively. As a result of HI test, positive rates were 480 to 422 (92.1%) in May, 494 to 394(79.8%) in July and 483 to 402(83.2%) in September, and the mean antibody titer were 4.6, 4.3, 4.0 to 0.3 decreased, respectively. The positive rates by ELISA, 480 to 475(99.0%) in May, 494 to 485(98.2%) in July, 483 to 472(97.7%) in September, and the mean S/P ratio were 2.319, 2.557 and 2.380, respectively. The result of HI test and ELISA positive 480 to 422(92.1%), 475(99.0%), 494 to 394(79.8%), 485(98.2%) and 483 to 402(83.2%), 472(97.7%). Therefore, ELISA was shown more sensitive compare the HI titers.

• Molecules and Cells
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• v.44 no.12
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• pp.883-892
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• 2021

Genome-wide chromosome conformation capture (3C)-based high-throughput sequencing (Hi-C) has enabled identification of genome-wide chromatin loops. Because the Hi-C map with restriction fragment resolution is intrinsically associated with sparsity and stochastic noise, Hi-C data are usually binned at particular intervals; however, the binning method has limited reliability, especially at high resolution. Here, we describe a new method called HiCORE, which provides simple pipelines and algorithms to overcome the limitations of single-layered binning and predict core chromatin regions with three-dimensional physical interactions. In this approach, multiple layers of binning with slightly shifted genome coverage are generated, and interacting bins at each layer are integrated to infer narrower regions of chromatin interactions. HiCORE predicts chromatin looping regions with higher resolution, both in human and Arabidopsis genomes, and contributes to the identification of the precise positions of potential genomic elements in an unbiased manner.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.51-56
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• 2015

It has been used various pad finish materials to enhance the reliability of solder joint and recently Electroless Ni Electroless Pd Immersion Gold (the following : ENEPIG) pad has been used more than others. This study is about reliability according to being used in commercial Electrolytic Ni pad and ENEPIG pad, and was observed behavior of various Cu contents. After reflow, the inter-metallic compound (IMC) between solder and pad is composed of $Cu_6Sn_5$ (Ni substituted) by using EDS, and in case of ENEPIG, between IMC and Ni layer was observed the dark layer ($Ni_3P$ layer). Additional, it could be controlled the thickness of dark layer according to Cu contents. Investigated the different fracture mode between electrolytic Ni and ENEPIG pad after drop shock test, in case of soft Ni, accelerated stress propagated along the interface between $1^{st}$ IMC and $2^{nd}$ IMC, and in case of ENEPIG pad, accelerated stress propagated along the weaken surface such as dark layer. The unstable interface exists through IMC, pad material and solder bulk by the lattice mismatch, so that the thermal and physical stress due to the continuous exterior impact is transferred to the IMC interface. Therefore, it is strongly requested to control solder morphology, IMC shape and thickness to improve the solder reliability.

• The Bulletin of The Korean Astronomical Society
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• v.41 no.2
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• pp.40.3-41
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• 2016

Previous HI survey data have shown that the central HI gas in the Milky Way that resides within ~1.5 kpc of the Galactic Centre (GC) is tilted by ${\sim}15^{\circ}$ with respect to the Galactic plane. Although several models, such as a tilted disk model, have been suggested to interpret the observed morphology of the HI layer, it is still unknown what causes and how it preserves its tilted structure. We study the behavior of a gas disk near the GC using an N-body / SPH code. Our galaxy model includes four components; nuclear bulge, bulge, disk and halo. We construct a HI model whose radius is 1.3 kpc, scale height is 100 pc and mass is $3.6{\times}10^6M_{\odot}$. We also assume that the gas disk is initially tilted $30^{\circ}$ with respect to the Galactic plane. Here we report our simulation results and discuss the evolution of the tilted gas disk.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.30B no.11
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• pp.1-10
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• 1993

This paper proposes a High Performance Full-Swing BiCMOS (HiF-BiCMOS) circuit which improves on the conventional BiCMOS circuit. The HiF-BiCMOS circuit has all the merits of the conventional BiCMOS circuit and can realize full-swing logic operation. Especially, the speed of full-swing logic operation is much faster than that of conventional full-swing BiCMOS circuit. And the number of transistors added in the HiF-BiCMOS for full-swing logic operation is constant regardless of the number of logic gate inputs. The HiF-BiCMOS circui has high stability to variation of environment factors such as temperature. Also, it has a preamorphized Si layer was changed into the perfect crystal Si after the RTA. Remarkable scalability for power supply voltage according to the development of VLSI technology. The power dissipation of HiF-BiCMOS is very small and hardly increases about a large fanout. Though the Spice simulation, the validity of the proposed circuit design is proved.

• 수도
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• s.60
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• pp.36-42
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• 1993