• 식물병연구
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• 제19권1호
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• pp.31-35
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• 2013

콩 저항성품종 육성의 기초자료로 이용하고자 국내 13개 콩 씨스트선충 집단을 대상으로 HG type를 조사하였다. 국내 콩 씨스트선충 HG type는 0, 2, 5, 2.5, 1.2.7, 2.5.7로 총 6개의 HG type가 발견되었다. 그중 HG type 2.5가 30.8%로 가장 많았으며 다음으로 HG type 2.5.7(23.0%)이었다. 각 indicator별로는 PI 88788 가해 집단이 76.9%, PI 209332 가해 집단이 61.5%, PI 548316('Cloud') 가해 집단이 30.8%, PI 548402('Peking') 가해 집단이 7.7%였고 PI 90763, PI 437654, PI 89772를 가해할 수 있는 콩 씨스트선충 집단은 없었다. PI 90763, PI 437654, PI 89772은 국내 모든 콩 씨스트선충 집단에 대해 저항성으로 나타나 저항성품종 육성 교배 모본으로 이용될 수 있을 것이다.

• Environmental Engineering Research
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• 제22권1호
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• pp.95-107
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• 2017

Adsorption equilibrium and kinetic behavior of two toxic heavy metals hexavalent chromium [Cr(VI)] and mercury [Hg(II)] on mustard oil cake (MOC) was studied. Isotherm of total chromium was of concave type (S1 type) suggesting cooperative adsorption. Total chromium adsorption followed BET isotherm model. Isotherm of Hg(II) was of L3 type with monolayer followed by multilayer formation due to blockage of pores of MOC at lower concentration of Hg(II). Combined BET-Langmuir and BET-Freundlich models were appropriate to predict Hg(II) adsorption data on MOC. Boyd's model confirmed that external mass transfer was rate limiting step for both total chromium and Hg(II) adsorptions with average diffusivity of $1.09{\times}10^{-16}$ and $0.97m^2/sec$, respectively. Desorption was more than 60% with Hg(II), but poor with chromium. The optimum pH for adsorptions of total chromium and Hg(II) were 2-3 and 5, respectively. At strong acidic pH, Cr(VI) was adsorbed by ion exchange mechanism and after adsorption reduced to Cr(III) and remained on MOC surface. Hg(II) removal was achieved by complexation of $HgCl_2$ with deprotonated amine ($-NH_2$) and carboxyl (COO-) groups of MOC.

• 한국작물학회지
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• 제58권2호
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• pp.161-168
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• 2013

Soybean cyst nematode (Heterodera glycines Ichinohe) is one of the serious soybean [Glycine max (L.) Merr.] pests in major soybean producing countries. The objective of this study was to investigate of Heterodera glycines type using the five SCN infested soybean field soils and was to evaluate resistance to the soybean cyst nematode HG 2.5.7 type on soybean varieties and germplasms. The five SCN contaminated soil samples were collected from the three provinces on November 2011 in Korea, and eggs were cultured on early spring season in 2012. For the second study, a total fifty nine soybean varieties and germplasms were tested by infestation of HG type 2.5.7 in the greenhouse. Soybean cyst nematode HG types were investigated from five locations, HG 2 (race 1) type at Donghae, HG 2.5 (race 1) type at Jeongseon and Hapcheon, HG type 2.5.7 (race 1 or 5) at Yeongwol, and HG 1.2.7 (race 5) type at Haenam locations in present study. No Korean soybean varieties and germplasms were observed with SCN resistant trait to the HG type 2.5.7. Average SCN female index were calculated with 82.7% in 59 plant materials. Our results could be provided useful information to develop a SCN resistant cultivar in Korea.

• 식물병연구
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• 제19권3호
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• pp.216-219
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• 2013

국내에서 육성된 75개 콩 장려품종에 대하여 콩 씨스트선충 HG type 2.5에 대한 저항성을 검정하였다. 품종에 따라 콩 씨스트선충의 증식 정도는 104-624 씨스트/화분이었다. 국내 콩 장려 품종 중에서 콩 씨스트선충 HG type 2.5에 대한 저항성 품종은 없었으며, '장엽콩', '새알콩', '밀양콩', '만석콩'은 중간저항성, 33품종은 중간감수성, 나머지 38품종은 감수성으로 판정되었다. 국내에서 저항성 장려품종이 육성되기까지 콩 씨스트선충의 피해가 심한 포장에는 '장엽콩', '새알콩', '밀양콩', '만석콩'을 심도록 추천하는 것이 좋겠다.

• Asian Pacific Journal of Cancer Prevention
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• 제16권5호
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• pp.1817-1820
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• 2015

Background: Hemoglobin A1c(HgA1c) is a marker of poor gylcemic control and elevation HgA1c is associated with increased risk of many cancers. We aimed to determine the HgA1c levels in endometrial cancer cases and any relationship with stage and grade of disease. Materials and Methods: A retrospective data review was performed between June 2011 and October 2012 at a tertiary referral center in Turkey. The study included 35 surgically staged endometrial cancer patients and 40 healthy controls. Preoperative HgA1c levels drawn within 3 months before surgery were compared. Also the relationships between HgA1c levels and stage, grade and hystologic type of cancer cases were evaluated. Results: The mean HgA1c levels were statistically significantly higher at $6.19{\pm}1.44$ in endometrial cancer cases than the $5.61{\pm}0.58$ in controls (p=0.027). With endometrial cancer cases, the mean HgA1c level was found to be $6.62{\pm}1.40$ for stage I and $6.88{\pm}1.15$ for stages II-IV (p=0.07). The figures were $6.74{\pm}1.65$ for endometrioid and $6.63{\pm}1.41$ for non-endometrioid type tumors (p=0.56). Mean HgA1c levels of $6.72{\pm}1.14$ for grade 1 and $6.62{\pm}1.42$ for grade 2-3 were observed (p=0.57). Conclusions: HgA1c levels in endometrial cancer patients were statistically higher than healthy controls. However, HgA1c did not show any significant correlation with stage, grade and histologic type in endometrial cancer cases.

• 센서학회지
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• 제12권6호
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• pp.282-288
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• 2003

MBE 방법으로 Si 기판위에 성장된 CdTe(211) 박막위에 MOVPE 법으로 HgCdTe 박막을 성장하였다. 성장된 박막의 표면은 hillock 등의 결함이 없는 매우 균일한 형상을 보였다. HgCdTe 박막표면의 EPD(etch pit density) 및 (422) 결정면의 이중 결정 x-선 회절 피크의 반치폭으로 본 결정성은 GaAs 기판위에 성장된 HgCdTe 박막에 비하여 우수하였다. GaAs 기판 위에 MOVPE 법으로 성장된 HgCdTe는 기판처리 과정에서 유입된 p-형 불순물로 인해 p-형 전도성을 나타내었으나 (211)CdTe 기판 위에 성장된 박막은 77K에서 $8{\times}10^{14}/cm^3$의 운반자 농도를 갖는 n-형 전도성을 보였다. 본 연구의 결과는 최근 요구되고 있는 $1024{\times}1024$급 이상의 화소를 갖는 대면적 HgCdTe 적외선 소자 제작에 널리 적용될 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.121-121
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• 2008

We propose a novel nanomaterial-based pn diode which constructed with an n-type ZnO nanowire (NW) and a p-type HgTe nanoparticle (NP) thin film. The photo current characteristics of a ZnO NW, a HgTe NP thin film and pn diode constructed with a ZnO NW and a HgTe NP thin film were investigated under illumination of the 325 nm and 633 nm wavelength light. The conductivities of a ZnO NW exposed to the 325 nm and 633 nm wavelength light increased, while the photocurrents taken from the HgTe NP thin film was very close to the dark currents. Moreover, The pn diode exhibited the rectifying characteristics of the dark current and of the photocurrent excited by the 633 nm wavelength light. In contrast, the ohmic characteristics for the photocurrent were observed due to the junction barrier lowering in the conduction band of the ZnO nanowire under the illumination of the 325 nm wavelength light.

• 전자공학회논문지A
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• 제32A권2호
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• pp.89-95
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• 1995

The structure of boron ion-implanted pn junctio in the vacancy-doped p-type HgCdTe was investigated with the differential Hall measurement. The as-implanted junction showed the electron concentration as high as 1${\times}10^{18}/cm^{3}$ and the junction depth of 0.6.mu.m. When the HgCdTe junction was heated in oven, the electron concentration near the junction decreased and the junction depth increased as the annealing temperature and time increased. The junction structure after the thermal annealing was n$^{+}$/n$^{-}$/p. For the 200.deg. C 20min annealed sample, the electron mobility was 10$^{4}cm^{2}/V{\cdot}$s near the surface(n$^{+}$), and was larger thatn 10$^{5}cm^{2}/V{\cdot}$s near the junction(n$^{+}$). The junction formation mechanism is conjectured as follows. When HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms near the surface. The displaced Hg vacancies diffuse in easily by the thernal treatment and a fill the Hg vacancies in the p-HgCdTe substrate. With the Hg vacancies filled completely, the GfCdTe substrate becomes n-type because of the residual n-type impurity which was added during the wafer growing. Therefore, the n$^{+}$/n$^{-}$/p regions are formed by crystal defects, residual impurities, and Hg vacancies, respectively.

• 한국결정학회지
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• 제12권3호
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• pp.171-176
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• 2001

(100), (111), (211)CdZnTe 기판 및 (100)GaAs 기판위에 HgCdTe 박막을 MOVPE 법으로 성장하였다. 기판의 방위에 따라 성장된 박막의 표면형상, 전기적 특성, 결정성 및 조성의 변화를 분석하였다. (111) CdZnTe 기판 위에서는 3차원적인 facet 형태의 성장이 일어났다. (100) CdZnTe 기판 위에 성장된 HgCdTe 박막의 경우 DCX반치폭은 55arcsec 정도로 125 arcsec의 반치폭을 보인 (100) GaAs에 비하여 우수한 결정성을 나타내었다. 그러나 전기적인 특성은 GaAs 기판의 경우, 이동도가 높은 n-형 전도성을 보였으나 CdZnTe 기판을 사용한 경우에는 10/sup 16/㎤ 이상의 운반자 농도를 갖는 p-형 전도성을 나타내었다.

• Journal of Chest Surgery
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• 제23권6호
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• pp.1146-1151
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• 1990

Supravavular aortic stenosis is a congenital narrowing of the ascending aorta just distal to the level of the origins of the coronary arteries, that may be localized or diffuse. Five patients with supravalvular aortic stenosis were operated upon between July, 1986 arid June, 1990. Four of these patients were William`s syndrome [mental retardation, elfin face], and one was isolated supravalvular aortic stenosis. Preoperative diagnosis of the supravalvular aortic stenosis was made by left side cardiac catheterization and angiocardiography. There are three types of supravalvular aortic stenosis such as membranous, hourglass and hypoplastic. Four of our patients were of hourglass type, and one was hypoplastic type. Patch aortoplasty was performed in all cases. Preoperative systolic gradients ranged from 45 to 1SO mmHg [average 102.6 mmHg]: postoperative gradients ranged from 0 to 75 mmHg [average 39 mmHg]. The patient of hypoplastic type has been suffered from mild exercise intolerance even after the operation, and the postoperative echocardiography revealed the systolic gradient of 100 mmHg [preoperative 180 mmHg]. The results of surgery for hourglass type were excellent. But the patient with hypoplastic form would be benefited from some modifications of the operation.