• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.80-85
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• 2011

The crystallization behavior and microstructural change of the glass-ceramics were analyzed as a function of concentration and etching time of the HF solution in order to enhance the degree of crystallinity induced by heterogeneous nucleation of glass of bottom ash containing 15 wt% $Li_2O$. The nucleation site seemed to be generated where the Si ion was eluted. The main crystal phases in the glass-ceramics fabricated in this study were $\beta$-spodumene and $Li_2SiO_3$. The specimens etched with HF of 0.5 vol% within 0~60 seconds showed increased crystalline peak intensities in XRD pattern with etching time compared to no-etched one. Also the crystal size and crystal occupancy in the glass matrix observed by SEM were increased with etching time. For the glass-ceramics etched with 1.0 and 2.0 vol% HF solution, the etching time over 10 s was not effective to increase the crystallinity. From this study, it was found that the glass-ceramics with the higher crystallinity could be obtained by HF-etching followed by heat treatment process, even though the nucleating agent or 2-stages thermal treatment process were not used.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.725-730
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• 1996

The key process in silicon surface micromachining is the selective etching of a sacrificial layer to release the silicon microstructure. The newly developed anhydrous HF/$CH_3$OH gas phase etching of TEOS (teraethylorthosilicate) sacrificial layers onto the polysilicon and the nitride substrates was employed to release the polysilicon microstructures. A residual product after TEOS etching onto the nitride substrate was observed on the surface, since a SiOxNy layer is formed on the TEOS/nitride interface. The polysilicon microstructures are stuck to the underlying substrate because SiOxNy layer does not vaporize. We found that the only sacrificial etching without any residual product and stiction is TEOS etching onto the polysilicon substrate.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.628-631
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• 2003

This study describes a new mastless nano-fabrication technique of Pyrex 7740 glass using the combination of nanomachining by nano-indenter XP and HF wet etching. First, the surface of a Pyrex 7740 glass specimen was machined by using the nano-machining system, which utilizes the mechanism of the nano-indenter XP. Next, the specimen was etched by HF solution. After the etching process, the convex structure or deeper hole is made because of masking or promotion effect of the affected layer generated by nano-machining. On the basis of this interesting fact. some sample structures were fabricated.

• Korean Journal of Materials Research
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• v.23 no.6
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• pp.316-321
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• 2013

The electrical properties and surface morphology changes of a silicon wafer as a function of the HF concentration as the wafer is etched were studied. The HF concentrations were 28, 30, 32, 34, and 36 wt%. The surface morphology changes of the silicon wafer were measured by an SEM ($80^{\circ}$ tilted at ${\times}200$) and the resistivity was measured by assessing the surface resistance using a four-point probe method. The etching rate increased as the HF concentration increased. The maximum etching rate 27.31 ${\mu}m/min$ was achieved at an HF concentration of 36 wt%. A concave wave formed on the wafer after the wet etching process. The size of the wave was largest and the resistivity reached 7.54 $ohm{\cdot}cm$ at an 30 wt% of HF concentration. At an HF concentration of 30 wt%, therefore, a silicon wafer should have good joining strength with a metal backing as well as good electrical properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.117-122
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• 2001

In this paper, we report on photoelectrochemical etching process of 6H-SiC semiconductor wafer. The etching was performed in two-step process; anodization of SiC surface to form a deep porous layer and thermal oxidation followed by an HF dip. Etch rate of about 615${\AA}$/min was obtained during the anodization using a dilute HF(1.4wt% in H$_2$O) electrolyte with the etching potential of 3.0V. The etching rate was increased with the bias voltage. It was also found out that the adition of appropriate portion of H$_2$O$_2$ into the HF solution improves the etching rate. The etching process resulted in a higherly anisotropic etching characteristics and showed to have a potential for the fabrication of SiC devices with a novel design.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.16-19
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• 2017

For the economical and environmental-friendly fabrication of polisher, Mo mask layer were sputtered on glass substrate instead of Cr mask material. Mo mask layers were sputtered by pulsed-DC sputtering and Photoresist patterns were formed on Mo mask layer for different develop times and optimized. After Mo mask layer were patterned and exposed glass was wet etched by HF solution for different etching times, the remaining Mo mask was stripped by using Al etchant. Develop time of 30 sec and HF wet etching time of 3 min were selected as optimized process condition and applied to the fabrication of polisher.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.41-46
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• 2008

Etching kinetics of $EAGLE^{2000TM}$ LCD glass was investigated using 2.5MHF-xMHCl$(x:0\sim8)$ acid mixtures. It was concluded that the reaction of HF-containing solutions with the glass was the rate-determining step for the dissolution process when considering following observations; the value of the activation energy $35\sim45$ kJ/mol and insensitivity of the dissolution rate to the etching time and the moving velocity of the glass into the solution. The etching rate linearly increased with increasing the HCl concentration in the etchant. It was also observed that the etched surface was as smooth as the original surface by addition of HCl and increase in etching temperature. This is due to the catalytic role of the $H_{3}O^{+]$ ions in the dissolution process.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.7 s.172
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• pp.71-78
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• 2005

The purpose of this study is to suggest a hyperfine maskless writing technique by using the nanoindentation and HF wet etching technique. Indents were made on the surface of Pyrex7740 glass by the hyperfine indentation process with a Berkovich diamond indenter, and they were etched in $50\;wr\%$ HF solution. After etching process, convex structure was obtained due to the deformation-induced hillock phenomena. In this study, effects of indentation process parameters (etching time, normal load, loading .ate, hold-time at the maximum load) on the morphologies of the indented surfaces after isotopic etching were investigated from an angle of deformation energies. Finally, sample characters were written to show the possibility of the application.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.225-228
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• 2005

The purpose of this study is to investigate effects of the plastic/elastic deformation energy on wet etching characterization on the surface of material by using the nanoindentation and HF wet etching technique. Indents were made on the surface of Pyrex 7740 glass by the hyperfine indentation process with a Berkovich diamond indenter, and they were etched in $50\;wt\%$ HF solution. After etching process, convex structure was obtained due to the deformation-induced hillock phenomena. In this study, effects of indentation process parameters (normal load, loading rate) on the morphologies of the indented surfaces after isotopic etching were investigated from an angle of deformation energies.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.4
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• pp.24-31
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• 2004

The objective of this work is to suggest a mastless pattern fabrication technique using the combination of machining by Nanoindenter(equation omitted) XP and HF wet etching. Sample line patterns were machined on a borosilicate surface by constant load scratch (CLS) of the Nanoindenter(equation omitted) XP with a Berkovich diamond tip, and they were etched in HF solution to investigate chemical characteristics of the machined borosilicate surface. All morphological data of scratch traces were scanned using atomic force microscope (AFM).