• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.194-197
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• 2013

We investigated the effect of etching time on the surface roughness, and electrical and optical properties of ZnO and 2 wt% Al-doped ZnO (AZO) films. The ZnO and AZO films were deposited on glass substrates by RF magnetron sputtering technique. The etching experiment was carried out using a solution of 5% HCl at room temperature. The surface roughness was characterized by Atomic Force Microscopy. The electrical property was measured by Hall measurement system and 4-point probe. The optical property was characterized by UV-vis spectroscopy. After the wet chemical etching, the surface textures were obtained on the surface of the ZnO and AZO films. With the increase of etching time, the surface roughness (RMS) of the films increased and the transmittance of the films was observed to decrease. For the AZO film, a low resistivity of $1.0{\times}10^{-3}\;{\Omega}{\cdot}cm$ was achieved even after the etching.

• The Journal of Korean Academy of Prosthodontics
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• v.40 no.4
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• pp.323-334
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• 2002

The purpose of this study is to investigate which current densities and etching times will result in an optimal etching depth and surface roughness when an Ni-Cr-Be alloy is etched with 30% perchloric acid($HClO_4$). For this study, observations were made by means of an optical three-dimensional surface roughness measuring machine and a scanning electron microscope. The etchings took place under the following conditions using current densities of $300mA/cm^2\;450mA/cm^2,\;600mA/cm^2$ and $750mA/cm^2$, and using etching time of three, five, six, seven and nine minutes. Under the conditions, the experiments reached the following conclusions. 1. When the current density is above $450mA/cm^2$ and the etching time is longer than five minutes, the etching depth increased as the current density and etching time increased. And the surface roughness was significantly influenced by the interaction of the current density and etching time. 2. Under the etching conditions of $600mA/cm^2$ and five minutes, the optimal etching depth for a resin cement space and the highest surface roughness for mechanical retention were obtained. The etching depth and surface roughness were $32.86{\mu}m$ and $7.90{\mu}m$, respectively. 3. Observations under the scanning electron microscope showed that both the corrosion at the grain boundary and the corrosion within the grain occurred on the etched surface. It was also observed that the corrosion at the grain boundary became more severe as the current density and etching time increased. In addition. at higher current densities and longer etching times general corrosion appeared.

• Journal of the Korean institute of surface engineering
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• v.26 no.5
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• pp.225-234
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• 1993

Titanium nitride coatings were deposited onto SUS304 stainless steel substrates pretreated by mechanical scrubbing, chemical etching at 50% HCl solution and Ar ion etching. Adhesion strength were measured by scratch tester and confirmed by SEM with EDS. Adhesion strength of Ar ion etched substrate was 10 to 15 times higher than that of mechanical scrubbed or chemical etched substrate. Ar ion etching brought about an uniform and fine spherical shaped surface, while chemical etching gave rise to a rough and irregular surface on SEM micrograph. It was suggested that higher adhesion strength might be caused by anchoring effect of Ar ion etched surface prior to TiN deposition.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.159-159
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• 2009

RF 스퍼터링법을 이용하여 유리기판위에 ZnO:Al 박막을 증착하고 다양한 조건 하에서 후 열처리를 실시하여 이에 따른 박막의 구조적, 전기적 및 광학적 특성과 HCl 습식 식각 후의 표면형상 변화를 조사하였다. ZnO:Al 투명전도막은 우수한 전기적, 광학적 특성, 수소 플라즈마 안정성 및 저 비용 등으로 실리콘 박막 태양전지 전면 전극용으로 많은 관심을 받고 있다. 기존의 비정질 실리콘 박막 태양전지용으로 많이 사용되고 있는 상용 Asahi-U형 ($SnO_2:F$) 투명전도막의 경우는 수소 플라즈마에 대한 안정성이 낮고 입사광의 장파장 대역에서의 낮은 산란특성으로 인하여 실리콘 박막 태양전지의 고효율화를 위한 적용에 한계를 나타내고 있다. 이를 개선하기 위하여 스퍼터링법으로 우수한 전기적 특성을 갖는 ZnO:Al 박막을 제조한 후 습식 식각을 통한 표면형상 변화를 통하여 입사광의 산란특성을 향상시키는 방법이 개발되어 많은 연구가 이루어지고 있다. 본 연구에서는 2.5 wt%의 $Al_2O_3$가 함유된 ZnO 타겟을 이용하여 ZnO:Al 박막을 RF 스퍼터링으로 증착한 후 $N_2$ 분위기와 진공 분위기 하에서 다양한 시간과 온도에 따라 후열처리를 하여 열처리 전 박막과의 물질 특성을 상호 비교하고 1%로 희석된 HCl로 습식 식각하여 열처리 전 박막의 구조적 특성이 습식 식각 후의 박막 표면형상 변화에 미치는 영향을 조사하였다. 이로부터 후열처리를 통한 ZnO:Al 투명전도막의 특성을 최적화하고 Asahi-U형 투명전도막과의 특성 비교를 통하여 실리콘 박막 태양전지용 전면전극으로의 적용 가능성을 조사하였다.

• Applied Chemistry for Engineering
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• v.9 no.4
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• pp.463-468
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• 1998

When sulfuric acid was added in HCl etching solution, corrosion of aluminum metal was inhibited by the chemical adsorption of sulfate ions. In the presence of $SO_4^{-2}$, cyclic voltammetry showed that the protective oxide film was formed on the inner surfaces of etch pits and, pit density was increased by nucleation on both the aluminum surface and the pits inside. Structure and distribution of etch pits found in AC etching of aluminum were strongly influenced by the concentration of $SO_4^{-2}$ and the amount of cathodic pulse charging. Below $0.8mC/cm^2$ of cathodic pulse charging, oxide films formed inside actively dissolving pits indicated the higher resistance to pit nucleation as the concentration of $SO_4^{-2}$ increases. However, the structural change of oxide films occurred above the $0.8mC/cm^2$ charging and the effect of $SO_4^{-2}$ was minimized, and it resulted in the rapid formation of etch pits.

• Journal of the Korean institute of surface engineering
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• v.5 no.2
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• pp.1-4
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• 1972

We have studied about the optimum chemical etching and sensitizing conditions of the plating on plastics. As specimen 'Mitzubishi Nobren MM2A' was used. The results were as follow. 1) The optimum chemical etching conditions. Etched the specimens for $10{\sim}40$ minutes at $70{\sim}80^{\circ}C$ with the etching solution of table 1, and for $10{\sim}15$ minutes at $65{\sim}70^{\circ}C$ with the etching solution of table 2 Table 1. Etching solution (I) Composition : $H_2SO_4(95%)-Component : 250 ml, Composition : $H_3PO_4(85%)$ - Component : 75ml, Composition : $K_2Cr_2O_7$ - Component : 12.5g, 2) The optimum sensitizing conditions. Sensitized the specimens for $60{\sim}90$ seconds at $25^{\circ}C$ with the sensitizing solution of table 3 Table 2. Etching solution (II) Composition : $H_2SO_4(95%)$ - Component : 22.5ml, Composition : $H_3PO_4(85%)$ - Component : 15ml, Composition : $CrO_3$ - Component : 105g, Composition : Water - Component : 150 ml, Table 3. Sensitizing solution Composition : $SnCl_2$ - Component : 9g, Composition : HCl(35%) - Component : 36ml, Composition : Water - Component : 300 ml

• Tribology and Lubricants
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• v.40 no.3
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• pp.71-77
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• 2024

Hydrogen has emerged as an eco-friendly and sustainable alternative to fossil fuels. However, the utilization of hydrogen requires high-pressure compression, storage, and transportation, which poses challenges to the durability of compressor components, particularly the diaphragm. This study aims to improve the durability of 304 stainless steel diaphragms in hydrogen compressors by optimizing their surface roughness and corrosion resistance through wet etching. The specimens were prepared by immersing 304 stainless steel in a mixture of sulfuric acid and hydrogen peroxide, followed by etching in hydrochloric acid for various durations. The surface morphology, roughness, and wettability of the etched specimens were characterized using optical microscopy, surface profilometry, and water contact angle measurements. The friction and wear characteristics were evaluated using reciprocating sliding tests. The results showed that increasing the etching time led to the development of micro/nanostructures on the surface, thereby increasing surface roughness and hydrophilicity. The friction coefficient initially decreased with increasing surface roughness owing to the reduced contact area but increased during long-term wear owing to the destruction and delamination of surface protrusions. HCl-30M exhibited the lowest average friction coefficient and a balance between the surface roughness and oxide film formation, resulting in improved wear resistance. These findings highlight the importance of controlling the surface roughness and oxide film formation through etching optimization to obtain a uniform and wear-resistant surface for the enhanced durability of 304 stainless steel diaphragms in hydrogen compressors.

• The Journal of Korean Academy of Prosthodontics
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• v.38 no.2
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• pp.178-190
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• 2000

The purpose of this study was to evaluate the surface roughness of Ni-Cr-Be alloy($Verabond^{(R)}$, Aalba Dent Inc., USA) according to electrolyte concentration and etching time. Total of 150 metal specimens ($12{\times}10{\times}1.5mm$) composed of 5 polisded specimens, 5 sandblasted specimens, 140 etched specimens were prepared. Etched groups were divided into 28 groups by the $HClO_4$ concentrations(10, 30, 50, 70%) and etching times(15, 30, 60, 120, 180, 240, 300 seconds). The mean surface roughness(Ra) and the etching depth were measured with Optical 3-dimensional surface roughness measuring machine(Accura 1500M, Intek Engineering Co., Korea) and observed under SEM. The results obtaind were as follows: 1. Surface roughness(Ra) and etching depth were affected by the order of etching time, electrolyte concentration, and their interaction(P<0.05). 2. Surface roughness(Ra) and etching depth were increased with etching time in 10%, 30% electrolyte concentrations, but they had no significant difference with etching time in 70% (P<0.05). 3. Surface roughness(Ra) and etching depth decreased in the order of 30, 10, 50, 70% electrolyte concentrations from 120 seconds etching time(P<0.05). 4. The remarkable morphologic changes in etched surface were observed along the grain boundaries in 15, 30 seconds of 10%, 30% concentrations and the morphologic changes could be denoted in the grains themselves as well as along the boundaries with the lapse of time. Even though the noticeable morphologic changes also took place in etched surface with 50% concentration, the degree of changes were less than that of changes with 10%, 30%. However, there were little morphologic changes with 70% concentration regardless of etching time. 5. Surface roughness(Ra) of sandblasting group with $50{\mu}m\;Al_2O_3$ had no significant difference with 30%-30 seconds etched group(P<0.05).

• Korean Journal of Materials Research
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• v.27 no.9
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• pp.501-506
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• 2017

Surface morphology and optical properties such as transmittance and haze effect of glass etched by physical and chemical etching processes were investigated. The physical etching process was carried out by pen type sandblasting process with $15{\sim}20{\mu}m$ dia. of $Al_2O_3$ media; the chemical etching process was conducted using HF-based mixed etchant. Sandblasting was performed in terms of variables such as the distance of 8 cm between the gun nozzle and the glass substrate, the fixed air pressure of 0.5bar, and the constant speed control of the specimen stage. The chemical etching process was conducted with mixed etching solution prepared by combination of BHF (Buffered Hydrofluoric Acid), HCl, and distilled water. The morphology of the glass surface after sandblasting process displayed sharp collision vestiges with nonuniform shapes that could initiate fractures. The haze values of the sandblasted glass were quantitatively acceptable. However, based on visual observation, the desirable Anti-Glare effect was not achieved. On the other hand, irregularly shaped and sharp vestiges transformed into enlarged and smooth micro-spherical craters with the subsequent chemical etching process. The curvature of the spherical crater increased distinctly by 60 minutes and decreased gradually with increasing etching time. Further, the spherical craters with reduced curvature were uniformly distributed over the etched glass surface. The haze value increased sharply up to 55 % and the transmittance decreased by 90 % at 60 minutes of etching time. The ideal haze value range of 3~7 % and transmittance value range of above 90 % were achieved in the period of 240 to 720 minutes of etching time for the selected concentration of the chemical etchant.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1111-1113
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• 2004

n+ etching process is investigated in the fabrication of TFF-LCD using low resistance data line of Mo/Al/Mo. Problems of consumption of upper Mo layer and contamination of channel area are resolved. Either of HCl or $Cl_2$ can be selected as a main etchant gas, and either of $SF_6$ or $CF_4$ can be selected as an additive. Plasma treatment after n+ etching process can reduce the off-current high problem.