• Journal of the Korean institute of surface engineering
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• v.26 no.5
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• pp.271-279
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• 1993

Experiments on electorchemical etching of aluminum foils with high cubic textures were carried out in this study. Etching behaviours and pit shapes with respect to various conditions of eletrochemical etching were in-vestigated. When HCl and NaCl solutions were used as electrolytes, the highest capacitanes were observed in solutions of 1MHCl and 5M NaCl. It was foundd that capacitance was improved by addition of H2SO4 to HCl so-lution which is considered to be due to the suppression of oxide film formation on the aluminum surface. The homogeneous distribution of each pits obtained in the HCl solution, while the degree of weight loss was lowest in the Nacl solution. The best etching properties in 1M HCl solution were obtained at the etching condi-tions of 0.15 A/$\textrm{cm}^2$, 150sec and$ 90^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.41-46
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• 2008

Etching kinetics of $EAGLE^{2000TM}$ LCD glass was investigated using 2.5MHF-xMHCl$(x:0\sim8)$ acid mixtures. It was concluded that the reaction of HF-containing solutions with the glass was the rate-determining step for the dissolution process when considering following observations; the value of the activation energy $35\sim45$ kJ/mol and insensitivity of the dissolution rate to the etching time and the moving velocity of the glass into the solution. The etching rate linearly increased with increasing the HCl concentration in the etchant. It was also observed that the etched surface was as smooth as the original surface by addition of HCl and increase in etching temperature. This is due to the catalytic role of the $H_{3}O^{+]$ ions in the dissolution process.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.41-45
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• 1984

The production of high-quality epitaxial layers almost always involves an etching step of silicon substrates with HCl gas prior to epitaxy, In this work, an investigation has been made on the etch rate and the etch-pit formation as a function of HCl gas concentration and etch temperature at atmospheric pressure (1 atm.) and reduced pressure (0.1 atom.). As a result, it is found that the etch rate is proportional to the square of the HCI gas concentration (XHC12) and the apparent ativation energy is between 0 and 111 Kcal/mole for both ammospheric and reduced pressure operation. From these results, it is expected that the HCI etching of silicon in reduced pressure operation proceeds, as in atmospheric operation, via the reaction ; Si + 2HCl ↔ SiCl2 + H2.

• Applied Chemistry for Engineering
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• v.24 no.1
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• pp.67-71
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• 2013

$FeCl_3$ has been used as an etchant for metal etching such as Fe, Cu, and Al. In the process of metal etching, $Fe^{3+}$ is reducted to $Fe^{2+}$ and the etching rate becomes slow and etching efficiency decreased. Waste $FeCl_3$ etchant needs to be regenerated because of its toxicity and treatment cost. In this work, HCl was initially mixed with the waste $FeCl_3$ and then, strong oxidants, such as $O_2$ and $H_2O_2$, were added into the mixed solution to regenerate the waste etchant. During successive etching and regeneration processes, oxygen-reduction potential (ORP) was continuously measured and the relationship between ORP and etching capability was investigated. Regenerated etchant using a two vol% HCl of the total etchant volume and a very small amount of $H_2O_2$ was very effective in recovering etching capability. During the etching-regeneration process, the same oxygen-reduction potential variation cannot be repeated every cycle since concentrations of $Fe^{2+}$ and $Fe^{3+}$ ions were continuously changed. It suggested that the control of etching-regeneration process based on the etching time becomes more efficient than that of the process based on oxygen reduction potential changes.

• Korean Chemical Engineering Research
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• v.58 no.3
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• pp.474-479
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• 2020

The etching solution for slimming of glass substrates was manufactured and HF was used as the main ingredient of wet etching solutions. Various types of strong acids such as HCl, HNO₃, H₂SO₄, amino acids and carboxylic acids such as citric acid, and etched solutions, respectively, were used to measure the etching rates and changes in surface shape of the glass. Regardless of the type of strong acids, the etching rate of the glass increased linearly as the added amount increased, and the sludge removal effect of the glass surface was also shown. The etching solution containing HCl showed more efficient results than other strong acids in the etching rate and the effect of removing sludge. The addition of carboxylic acid did not significantly affect the variation of etching rate, but had the effect of removing sludge. However, if amino acids were added, changes in etching rate and sludge removal were not significant.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.40-44
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• 2022

Wet etching of α-Ga₂O₃ epitaxy film was performed using a 35 % hydrochloric (HCl) acid solution. As the temperature of the 35 % HCl solution increased, the α-Ga₂O₃ etch rate increased, and the etch rate of 119.6 nm/min was obtained at 75℃, the highest temperature examined in this work. The activation energy for etch reaction was determined to be 0.776 eV, and this suggests that the wet etching of α-Ga₂O₃ in the 35 % HCl solution was dominated by the reaction-limited mechanism. AFM analysis showed that the surface roughness of the etched surface increased as the temperature of the etchant solution increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.657-662
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• 2003

This paper presents a new fabrication method of selective SiGe epitaxial growth at 650 $^{\circ}C$ on (100) silicon wafer with oxide patterns by reduced pressure chemical vapor deposition. The new method is characterized by a cyclic process, which is composed of two parts: initially, selective SiGe epitaxy layer is grown on exposed bare silicon during a short incubation time by SiH$_4$/GeH$_4$/HCl/H$_2$system and followed etching step is achieved to remove the SiGe nuclei on oxide by HCl/H$_2$system without source gas flow. As a result, we noted that the addition of HCl serves not only to reduce the growth rate on bare Si, but also to suppress the nucleation on SiO$_2$. In addition, we confirmed that the incubation period is regenerated after etching step, so it is possible to grow thick SiGe epitaxial layer sustaining the selectivity. The effect of the addition of HCl and dopants incorporation was investigated.

• Carbon letters
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• v.13 no.1
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• pp.44-47
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• 2012

We analyzed the effect of etchants for metal catalysts in terms of the characteristics of resulting graphene films, such as sheet resistance, hall mobility, transmittance, and carrier concentration. We found the residue of $FeCl_3$ etchant degraded the sheet resistance and mobility of graphene films. The residue was identified as an iron oxide containing a small amount of Cl through elemental analysis using X-ray photoelectron spectroscopy. To remove this residue, we provide an alternative etching solution by introducing acidic etching solutions and their combinations ($HNO_3$, HCl, $FeCl_3$ + HCl, and $FeCl_3+HNO_3$). The combination of $FeCl_3$ and acidic solutions (HCl and $HNO_3$) resulted in more enhanced electrical properties than pure etchants, which is attributed to the elimination of left over etching residue, and a small amount of amorphous carbon debris after the etching process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.105-109
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• 2002

The wet etching characteristics of magnetic materials such as NiFe and CoFe were investigated in terms of etch rate and etch profile by using variouus etching solutions (etchants). Among the various etching solutions, HNO$_3$, HCl, and H$_2$SO$_4$were selected for the etching of magnetic materials and showed distinct results. In the case of NiFe films, faster etch rate were obtained with HNO$_3$solution. When NiFe films ere etched with HCl solution, white etch residues were found on the surface of etched films. From FEAES analysis of these etch residues, they were proved to be by-product from the reaction of NiFe with Cl element. CoFe thin films showed the similar trend to the case of NiFe films. They were etched fast in HNO$_3$ solution while Chl solution represented slow etching. The etch profiles of CoFe films showed smooth etch profile but revealed the partial etching around the patterns in HNO$_3$solution of relatively high concentration. It was observed that the etched surface was clean and smooth, and that white etch residues were also remained on the etched films.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.319.1-319.1
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• 2016

Recently, the Al-doped ZnO (ZnO:Al) films are intensively used in thin film a-Si solar cell applications due to their high transmittance and good conductivity. The textured ZnO:Al films are used to enhance the light trapping in thin film solar cells. The wet etch process is used to texture ZnO:Al films by dipping in diluted acidic solutions like HCl or HF. During that process the glass substrate could be damaged by the acidic solution and it may be difficult to apply it for the inline mass production process since it has to be done outside the chamber. In this paper we report a new technique to control the surface morphology of RF-sputtered ZnO:Al films. The ZnO:Al films are textured with vaporized HF formed by the mixture of HF and H2SiO3 solution. Even though the surface of textured ZnO:Al films by vapor etching process showed smaller and sharper surface structures compared to that of the films textured by wet etching, the haze value was dramatically improved. We achieved the high haze value of 78% at the wavelength of 540 nm by increasing etching time and HF concentration. The haze value of about 58% was achieved at the wavelength of 800 nm when vapor texturing was used. The ZnO:Al film texture by HCl had haze ratio of about 9.5 % at 800 nm and less than 40 % at 540 nm. In addition to low haze ratio, the texturing by HCl was very difficult to control etching and to keep reproducibility due to its very fast etching speed.