• Title/Summary/Keyword: HCD Ion Plating Method

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TiN coatings by HCD plasma enhanced reactive ion plating method (HCD플라즈마를 이용한 반응성 이온플레이팅법에 의한 TiN 코팅)

  • 서용운;황기웅
    • Journal of the Korean institute of surface engineering
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    • v.25 no.3
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    • pp.133-143
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    • 1992
  • Titanium nitride(TiN) films have been prepared by HCD plasma enhanced reactive ion plating. Density and temperature of the plasma generated by the HCD were investigated. It was shown that parameters such as the substrate bias voltage(0 350V) and N2 flow rate(10 180SCCM) influenced the growth, the growth, the microstructure and the color tone of the film mostly. In order to study the interface region, surface analysis by AES combined with sputter depth profiling was performed. Microhardness of the coated TiN films were measured by micro Vickers hardness tester. Also, the effect of coating parameters on composition, coating surface and fracture morphology, grain size and growth rate were examined.

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A Study on the Characteristics of the MgO Thin Film Deposited by the Hollow Cathode Discharge Ion Plating Method (HCD 이온 플레이팅법에 의해 증착된 MgO박막의 특성에 관한 연구)

  • Chung, Woo-Joon;Jeong, Heui-Seob;Whang, Ki-Woong
    • Proceedings of the KIEE Conference
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    • 1996.11a
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    • pp.200-202
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    • 1996
  • MgO film was deposited on the glass substrate by the hollow cathode discharge ion plating method and the characteristics of the MgO thin film such as deposition rate, crystalline orientation, surface morphology and secondary electron coefficient were investigated. The deposition rate of MgO thin films were $430^{\sim}1270{\AA}$/min at various temperatures and biases. The crystalline orientation of the MgO thin film changed from (200) to (220) upon increasing the HCD current from 100A to 200A. These results indicated that the crystallin orientation of the MgO thin film was determined by the super-saturation ratio. The (200) peak decreased and the (220) peak increased as the substrate bias increased, while both peaks increased as the substrate temperature increased. The grain size increased as the substrate bias increased and the secondary electron emission coefficient increased as the substrate bias increased.

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The Fabrication of HCD Ion Plating Apparatus and XPS Analysis on the Fine Color Changes of TiN Films on Stainless Steel (HCD 이온플레이팅 장치 제작 및 Stainless Steel 위에 TiN 박막의 미세색상변화에 따른 XPS분석)

  • Park, Moon Chan;Lee, Jong Geun;Choi, Kwang Ho;Cha, Jung Won;Kim, Eung Soon;Park, Jin Hong
    • Journal of Korean Ophthalmic Optics Society
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    • v.15 no.4
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    • pp.361-366
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    • 2010
  • Purpose: HCD ion plating apparatus by hollow cathod discharge method was fabricated and TiN films were deposited on stainless steel by this apparatus with increasing in $N_2$ gas flow and the fine color changes of TiN films were analyzed. Methods: The spectroradiometer and spectrophotometer were used to observe optically the fine color changes of TiN thin films, and XPS was used to analyze the compositions of TiN thin films with increasing in $N_2$ gas flow. Results: The color coordinate of TiN thin film with $N_2$ 120 sccm gas flow showed (0.382, 0.372) which had the mixed colors of gold and silver, and the color coordinate changed to the increasing value of (x,y) with increasing in $N_2$ gas flow which indicated the deep gold color. It was found that the slopes of the reflectances at 550nm were increased with increasing in $N_2$ gas flow. And from the Ti scans using XPS, it was found that the peak heights of 455 eV derived from TiN composition were increased with increasing in $N_2$ gas flow, while the peak heights of 459 eV from $TiO_2$ composition were decreased. Conclusions: The results obtained above were that the color of TiN film with 120 sccm $N_2$ gas flow had been observed from the mixed color of silver and gold due to TiC, $N_2$, TiN on the surface and TiN, $N_2$ inside film, and the color of TiN films changed a deep gold color with increasing in $N_2$ gas flow due to increasing TiN composition.