• The Korean Journal of Pharmacology
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• v.27 no.2
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• pp.211-214
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• 1991

SJ-200 is an oral liquid preparation of acetaminophen, ibuprofen, Dl-methyleph edrine HCl, caffeine, chlorpheniramine maleate, guaifenesin and dextromethorphan HBr, which is indicated when there is a need to improve various cold symptoms such as headache, sore throat, fever, or cough etc. Thirty patients was enroled for this study fro June to July, 1991. They were given one bottle (30 ml) of SJ-200 t.i.d dy P.O for an average of one to seven days. 1) Twenty-eight patients (84.8%) were relieved from the symptoms of upper respiratory tract infection. 2) Side effects with this preparation occured in 8 patients924.2%) but in four patients, they were mild, which wee transienty by the discontinuation f the medication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.179-179
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• 1998

실리콘 집적회로 제조시 sub-micron 의 contact 형성 공정은 질연막 형성 후 이의 식각 및 세정, c contact 실리사이드, 획산방지막, 배선 금속층의 형성 과정올 거치게 된다. 본 연구팀에서는 C.F야f2 헬리 콘 플라즈마훌 이용한 고선택비 contact 산화막 식각공정시 형성된 잔류막충과 오염 손상올 관찰하고 산소 플라즈마 처리와 후속 열처리에 따른 이들의 제거 정도를 관찰하여 이에 대한 결과를 발표하였다. 본 연구메서는 식각 및 후처리에 따라 잔류하는 잔류막과 손상층이 후속 공정인 contact 실리사이드 형 섬에 미치는 영향올 관찰하였다. C C.F바f2 웰리콘 풀라즈마률 이용한 식각시 공정 변수로는 수소가스 첨가, bias voltage 와 과식각 시간 의 효과를 관찰하였으며 다른 조건은 일정하게 하였다 .. Contact 실리사이드로는 Ti, Co-싫리사이드를 선 택하였으며 Piranha cleaning, 산소 플라즈마 처리, 산소 풀라즈마+600 'C annealing으로 각각 후처리된 시 편을 후처리하지 않은 시펀돌과 함께 실리사이드 형성용‘시펀으로 이용하였다 각각 일정 조건에서 동 일 두께의 실리사이드훌 형성시킨 후 4-point probe룰 이용하여 면저황올 측정하였다 후처리하지 않은 시편의 경무 실리사이드 형성은 아주 시펀의 일부분에서만 형성되었으며 후속 세정 및 얼처리훌 황에 따라 실리사이드의 면저항은 감소하여 식각 과정을 거치지 않은 깨끗한 실리콘 웨이퍼위에 실리사이드 를 형성시킨 값(control 값)에 접근하였다. 실리사이드의 면저항값은 식각시 노훌된 실리콘 표면 위에 형 성된 손상충보다는 잔류막에 큰 영향을 받았으며 수소 가스가 첨가된 식각 가스로 식각한 시편으로 형 성한 실리사이드의 면저항값이 손상이 상대적으로 적은 것으로 관찰된 수소훌 첨가하지 않은 식각 가 스로 식각한 시펀 위에 형성된 실리사이드의 면저황에 비해 낮은 값을 나타내었다. 실리사이드의 전기적 륙성에 미치는 손상층의 영향올 좀더 면밀히 관찰하고자 bare 실리콘 wafer 에 잔류막이 거의 없이 손상층을 유발시키는 식각 조건들 (100% HBr, 100%H2, 100%Ar, Cl싸fz)에 대하여 실 리콘 식각을 수행한 후 Co-실리사이드률 형성하여 이의 면저황을 측정한 걸과 100% Ar 가스로 식각된 시편을 이용하여 형성한 실리사이드의 면저항은 control 에 기까운 면저항값올 지니고 따라서 손상층이 실리사이드 형섬메 미치는 영향은 크지 않음을 알 수 있었다. 이상의 연구 결과훌 통해 손상층이 실리사이드의 형성이나 전기적 톡섬에 미치는 영황은 잔류막층 에 의한 영향보다 적다는 것을 알 수 았으며 잔류막층의 두께보다는 성분이나 걸합상태, 특히 식각 및 후처리 후 잔류하는 탄소 싱분과 C-Si 결함에 큰 영향올 받는 것올 알 수 있었다.

• The Korean Journal of Physiology and Pharmacology
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• v.2 no.4
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• pp.461-469
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• 1998

Tetrahydroisoquinoline (THI) alkaloids can be considered as cyclized derivatives of simple phenylethy-lamines, and many of them, especially with 6,7-disubstitution, demonstrate relatively high affinity for catecholamines. Two -OH groups at 6 and 7 positions are supposed to be essential to exert ?${\beta}-receptor$ activities. However, it is not clear whether -OH at 6,7 substitution of THIs also shows ?${\alpha}-adrenoceptor$ activities. In the present study, we investigated whether -OH or $-OCH_3$ substitutions of 6,7 position of THIs differently affect the ?1-adrenoceptor affinity. We synthesized two 1-naphthylmethyl THI alkaloids, $1-{\beta}-naphthylmethyl-6,7-dihydroxy-1,2,3,4-tetrahydroisoquinoline$ HBr (YS 51) and $1-{\beta}-naphthylmethyl-6, 7-dimethoxy-1,2,3,4-tetrahydroisoquinoline$ HCl (YS 55), and their pharmacological actions on ?${\alpha}_1-adrenoceptor$ were compared. YS 51 and YS 55, concentration-dependently relaxed endothelium-denuded rat thoracic aorta precontracted with phenylephrine (PE, 0.1 ${\mu}M$) in which $pEC_{50}$ were $5.89{\pm}0.21$ and $5.93{\pm}0.19$, respectively. Propranolol (30 nM) did not affect the relaxation-response curves to YS 51 and YS 55. Concentration-response curves to PE were shifted to right by the pretreatment with YS 51 or YS 55. The $pA_2$ values of YS 51 and YS 55 showed $6.05{\pm}0.24$ and $5.88{\pm}0.16$, respectively. Both probes relaxed KCl (65.4 mM)-contracted aorta and inhibited $CaCl_2-induced$ contraction of PE-stimulated endothelium- denuded rat thoracic aorta in $Ca^{2+}-free$ solutions. In isolated guinea pig papillary muscle, 1 and 10 ${\mu}M$ YS 51 increased contractile force about 4- and 8- fold over the control, respectively, along with the concentration-dependent increment of cytosolic $Ca^{2+}$ ions. While, 10 ${\mu}M$ YS 55 reduced the contractile force about 50 % over the control and lowered the cytosolic $Ca^{2+}$ level, in rat brain homogenates, YS 51 and YS 55 displaced $[^3H]prazosin$ binding competitively with Ki 0.15 and 0.12 ${\mu}M$, respectively. However, both probes were ineffective on $[^3H]nitrendipine$ binding. Therefore, it is concluded that two synthetic naphthylmethyl-THI alkaloids have considerable affinity to ?1-adrenenoceptors in rat aorta and brain.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.11
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• pp.1960-1972
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• 2006

In this thesis, GPS and the electronic mapping were used to realize such a system by recognizing license plate numbers and identifying the location of objects that move at synchronous times with simulated movement in the electronic map. As well, throughout the study, a camera attached to a PDA, one of the mobile devices, automatically recognized and confirmed acquired license plate numbers from the front and back of each cu. Using this mobile technique in a wireless network searches for specific plate numbers and information about the location of the car is transmitted to a remote sewer. The use of such a GPS-based system allows for the measurement of topography and the effective acquisition of a car's location. The information is then transmitted to a central controlling center and stored as text to be reproduced later in the form of diagrams. Getting positional information through GPS and using image-processing with a PDA makes it possible to estimate the correct information of a car's location and to transmit the specific information of the car to a control center simultaneously, so that the center will get information such as type of the cu, possibility of the defects that a car might have, and possibly to offer help with those functions. Such information can establish a mobile system that can recognize and accurately trace the location of cars.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.406-406
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• 2010

일반적으로, 나노스케일의 MOS 소자에서는 게이트 절연체 두께가 감소함에 따라 tunneling effect의 증가로 인해 PID (plasma induced damage)로 인한 소자 특성 저하 현상을 감소하는 추세로 알려져 있다. 하지만 요즘 많이 사용되고 있는 high-k 게이트 절연체의 경우에는 오히려 더 많은 charge들이 trapping 되면서 PID가 오히려 더 심각해지는 현상이 나타나고 있다. 이러한 high-k 게이트 식각 시 현재는 주로 Hf-based wet etch나 dry etch가 사용되고 있지만 gate edge 영역에서 high-k 게이트 절연체의 undercut 현상이나 PID에 의한 소자특성 저하가 보고되고 있다. 본 연구에서는 이에 차세대 MOS 소자의 gate stack 구조중 issue화 되고 있는 metal gate 층과 gate dielectric 층의 식각공정에 각각 중성빔 식각과 중성빔 원자층 식각을 적용하여 전기적 손상 없이 원자레벨의 정확한 식각 조절을 해줄 수 있는 새로운 two step 식각 공정에 대한 연구를 진행하였다. 먼저 TiN metal gate 층의 식각을 위해 HBr과 $Cl_2$ 혼합가스를 사용한 중성빔 식각기술을 적용하여 100 eV 이하의 에너지 조건에서 하부층인 $HfO_2$와 거의 무한대의 식각 선택비를 얻었다. 하지만 100 eV 조건에서는 낮은 에너지에 의한 빔 스케터링으로 실제 패턴 식각시 etch foot이 발생되는 현상이 관찰되었으며, 이를 해결하기 위하여 먼저 높은 에너지로 식각을 진행하고 $HfO_2$와의 계면 근처에서 100 eV로 식각을 해주는 two step 방법을 사용하였다. 그 결과 anistropic 하고 하부층에 etch stop된 식각 형상을 관찰할 수 있었다. 다음으로 3.5nm의 매우 얇은 $HfO_2$ gate dielectric 층의 정확한 식각 깊이 조절을 위해 $BCl_3$와 Ar 가스를 이용한 중성빔 원자층 식각기술을 적용하여 $1.2\;{\AA}$/cycle의 단일막 식각 조건을 확립하고 약 30 cycle 공정시 3.5nm 두께의 $HfO_2$ 층이 완벽히 제거됨을 관찰할 수 있었다. 뿐만 아니라, vertical 한 식각 형상 및 향상된 표면 roughness를 transmission electron microscope(TEM)과 atomic force microscope (AFM)으로 관찰할 수 있었다. 이러한 중성빔 식각과 중성빔 원자층 식각기술이 결합된 새로운 gate recess 공정을 실제 MOSFET 소자에 적용하여 기존 식각 방법으로 제작된 소자 결과를 비교해 본 결과 gate leakage current가 약 one order 정도 개선되었음을 확인할 수 있었다.

• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.330-337
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• 2011

In this research, the preparation processes for making a series of $\omega$-mercapto alkylamine 1 and $\omega$-mercapto alkanoic acid 2 useful for studying of the self-assembled monolayer(SAM) are described. The preparation methods of the first goal materials, $\omega$-mercapto alkylamines 1 were carried out as follows: First, $\omega$-phthalimide alkanol 3 was synthesized from commercially available potassium phthalimide derivatives and $\omega$-bromoalkanol in DMF at $80{^{\circ}C}$ via substitution reaction. After refluxing $\omega$-phthalimide alkanol 3 with hydrazine hydrate in ethanol followed by treating with c-HCl, $\omega$-aminoalkanol 4 was obtained in 76-98% yield, accompanied with side-product 5. Bromination of hydroxyl moiety of $\omega$-aminoalkanol 4 using aqueous hydrobromic acid furnished $\omega$-bromoamine 6 in 34-97% yields. Substitution reaction 6 with thiourea in 95% ethanol gave $\omega$-aminoalkanthiuronium 7, which was treated with aqueous strong base and aqueous strong sulfuric acid gave desired products, $\omega$-mercapto alkylamines 1 through overall 5 steps. The second target material, $\omega$-mercapto alkanoic acid 2 was prepared via 2 steps. $\omega$-bromo alkanoic acid was reacted with thiourea to give $\omega$-thiourea alkanoic acid 7 in 69-85%, which was treated with aqueous strong base and strong acid to furnish $\omega$-mercapto alkanoic acid 2 in 50-98%. The fabricated long-chain alkylthiol(LCAT) can be used as linkers to immobilize protein, enzyme and various kinds of biomolecules on the surface of metallic materials(Au, Pt, Ti) by SAM, and can be useful chemical tools for the application study on the surface modification of metallic materials.