• Title/Summary/Keyword: H-bonding

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Observation of magnetic fields due to persistent currents in a ring made of a coated conductor

  • Goo, Doo-Hoon;Kim, Ho-Sup;Youm, D.;Jung, Kook-Chae
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.92-98
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    • 2000
  • A ring comprising a coated conductor was fabricated. A ring was made first using a biaxially textured Ni tape whose two ends were connected by means of the atomic diffusion bonding technique. Then buffer layers and a YBCO film were deposited on it. All the films were well textured as confirmed by XRD pole figures. The B-H loops, where B and H are the magnetic field at the center of the ring and the applied field respectively, were measured as a function of temperature. The persistent current density (J$_c$) flowing circularly was estimated from the remanent field of B. In the range of temperature from 72K to 20K, J$_c$ changed from zero to 2${\times}$1 0$^5$A/cm$^2$.

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Semiconductor Laser diode Die bonding Using AuSn solder (AuSn 솔더를 사용한 반도체 레이저의 본딩)

  • Choi, S.H.;Bae, H.C.;Heo, D.C.;Han, I.K.;Cho, W.C.;Choi, W.J.;Park, Y.J.;Lee, J.I.;Lee, C.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.04a
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    • pp.203-205
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    • 2003
  • 레이저 다이오드를 p-side-down 방식으로 본딩하기 위하여 AuSn 솔더합금을 증착한 후 온도와 압력, 시간을 변화시켜 본딩상태를 조사하였다. CuW위에 adhsion layer와 확산방지층을 각각 $500{\AA}$$2000{\AA}$을 증착하였으며 솔더층으로 AuSn을 $2.6{\mu}m$ 증착 하였다. 열처리는 질소 분위기에서 행하였으며, 표면의 거칠기는 AFM으로 측정하였다.

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Bonding and Antibonding Regions (I) (결합공간과 반결합공간 (제1보))

  • Kim Hojing;Lee Duckhwan
    • Journal of the Korean Chemical Society
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    • v.23 no.1
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    • pp.15-19
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    • 1979
  • The new concept of the Bonding and Antibonding Regions in the transition density space is developed from the Integral Hellmann-Feynman Theorem and the positive definiteness of the transition density. The unility of this concept is fully demonstrated for H2 system. It is expected that the nature of the electronic perturbation energy due to the change of nuclear configuration can be successfully understood by using this concept. Properties of the transition density is briefly discussed.

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Consideration on the various phenomena appeared at bonding interface in fusion-bonded silicon wafer pairs (용융접합된 규소 기판쌍에 있어서 접합 계면에 발생하는 제 현상들의 고찰)

  • Bhang, J.H.;Ju, B.K.;Oh, M.H.;Park, J.W.
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.1057-1059
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    • 1993
  • Some interested phenomena, which were appeared near the bonding interface, were investigated by angle lapping and delineation method, SEM, and TEM observations. Voids, defects, material continuity, and interfacial oxide stability were observed and discussed in the fusion-bonded Bi-Si or Si-$SiO_2$/Si wafer pairs.

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Variation of fracture strength of adhesive joint according to the operating temperature (사용환경온도에 따른 접착이음의 인장전단강도 변화)

  • Kim, J.Y.;Lee, C.J.;Lee, S.K.;Park, G.W.;Jung, B.H.;Schafer, H.;Kim, B.M.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2008.05a
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    • pp.517-520
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    • 2008
  • Recently, use of adhesive bonding technology is increased to achieve the multi-material design for lightweight structure in automobile industry. In this paper, the fracture strength of adhesive has been studied with the single lap shear test conducted at different temperatures. The joint specimens are made from Al 5052 and SPRC 440 bonded with structural epoxy adhesive. The operating temperature has been considered up to $150[^{\circ}C]$ and the single lap shear test has been conducted with 5mm/min tensile rate. Fracture strength of adhesive bonded joint has been decreased with increase of operating temperature. The fracture strength at the $100[^{\circ}C]$ was shown about half of that at room temperature.

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Study of Chip On Glass Bonding Method using Diode Laser (다이오드 레이저를 이용한 Chip On Glass 접합에 관한 연구)

  • Seo M.H.;Ryu K.H.;Nam G.J.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.423-426
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    • 2005
  • A new chip on glass(COG) technique by making use of a high power diode laser for LCD driver IC packaging of LCD has been developed. A laser joining technology of the connection of IC chip to glass panel has several advantages over conventional method such as hot plate joining: shorter process time, high reliability of joining, and better fur fine pitch joining. The reach time to cure temperature of ACF in laser joining is within 1 second. In this study, results show that the total process time of joining is reduced by halves than that of conventional method. The adhesion strength is mainly 100-250 N/cm. It is confirmed that the COG technology using high power diode laser joining can be applied to advanced LCDs with a fine pitch.

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Molecular Conformation-Dependent Complexation between Acidic- and Basic-Polypeptides via Hydrogen Bonding in Solution

  • Jang, Cheon Hak;Kim, Hyeon Don;Jo, Byeong Gi;Lee, Jang U
    • Bulletin of the Korean Chemical Society
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    • v.16 no.1
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    • pp.42-47
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    • 1995
  • Interpolymer complex formation between basic polypeptide poly(L-proline) Form Ⅱ (PLP(Ⅱ)) and acidic polypeptides poly(L-glutamic acid) (PLGA) and poly(L-aspartic acid)(PLAA) has been studied in water-methanol (1:2 v/v) mixed-solvent by viscometry, potentiometry, light scattering and circular dichroism (CD) measurements. It has been found that polymer complexes between PLP(Ⅱ) and PLGA (or PLAA) are formed via hydrogen bonding with a stoichiometric ratio of PLP(Ⅱ)/PLGA (or PLAA)=1:2 (in unit mole ratio) and that PLP(Ⅱ) forms polymer complex more favorably with PLGA than with PLAA. In addition, the minimum (for pH 5.0) and the maximum (for pH 3.2) in reduced viscosity of dilute PLP(Ⅱ)-PLGA mixed solutions are observed at 0.67 unit mole fraction of PLGA (i.e., [PLP(Ⅱ)]/[PLGA]=1/2). These findings could be explained in terms of molecular structure (or conformation) of the complementary polymers associated with the complex formation.

Concentration and Solvent Effects upon Carbonyl Streching Frequency Shifts of Raman Spectra: 4-Substituted Benzaldehydes

  • Jeong, Yeong Mi;Gang, Jae Su;Seo, Seung Heon;Lee, Mu Sang
    • Bulletin of the Korean Chemical Society
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    • v.17 no.2
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    • pp.128-131
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    • 1996
  • From Raman spectra, the ${\nu}g$C=O frequencies of 4-substituted benzaldehydes were found to correlate with the ${\sigma}_p$ values of the 4-x atom or group as well as the acceptor number (AN) values of solvents. In various solvents, the ${\nu}g$C=O frequency of benzaldehyde decreased upon the increase of benzaldehyde concentration. This shift was mainly due to the hydrogen bonding between the carbonyl oxygen and/or aldehydic proton of benzaldehyde and the solvent molecules. Over the 1-80 volume % change, the ${\nu}g$C=O frequency of benzaldehyde down shifted from 1709.4 $cm^{-1}$ to 1700.2 $cm^{-1}$ in CCl4 solution and from 1703.0 $cm^{-1}$ to 1698.0 $cm^{-1}$ in $C_2H_5OH$ solution. This is due to the fact that hydrogen bonding between the benzaldehyde and C2H5OH was much stronger than that between the benzaldehyde and the other solvents.

Comparison of Adsorption Configurations between Phenylalanine and Tyrosine on Ge(100)

  • Im, Hui-Seon;Yang, Se-Na;Lee, Han-Gil
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.216-216
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    • 2011
  • We will investigate the bonding configurations of phenylalanine and tyrosine adsorbed on the Ge(100) surface using CLPES and DFT calculations. First, the C 1s, N 1s, and O 1s spectra obtained at 300 K revealed that both the amine and carboxyl groups of phenylalanine and tyrosine concurrently participated in adsorption on the Ge(100) surface without bond breaking using CLPES, depending on the extent of coverage. In the second place, we confirmed that the "O-H dissociated-N dative bonded structure" is the most stable structure implying kinetically favorable structure, and the "O-H dissociation bonded structure" is another stable structure manifesting thermodynamically advantageous structure using DFT calculations. This tendency turns up both phenylalanine and tyrosine, similarly. Furthermore, through the CLPES data and DFT calculation data, we discovered that the "O-H dissociated-N dative bonded structure" and the "O-H dissociation bonded structure" are preferred at 0.30 ML and 0.60 ML, respectively. Moreover, we found that the phenyl ring of phenylalanine is located in axial position to Ge(100) surface, but the phenyl ring of tyrosine is located in parallel to Ge(100) surface using DFT calculations.

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Synthesis and Selective Recognition of Dihydrogen Phosphate by Urea-Anthraquinone

  • Jeon, Seung-Won;Park, Duck-Hee;Lee, Hyo-Kyoung;Park, Jin-Young;Kang, Sung-Ok;Nam, Kye-Chun
    • Bulletin of the Korean Chemical Society
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    • v.24 no.10
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    • pp.1465-1469
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    • 2003
  • A neutral ligand is synthesized and studied for the binding properties with anions by electrochemical methods. The binding of 1,8-bis[(N'-phenylureido)ethyloxy]anthraquinone (BPUA) with $H_2PO_4^-$ makes cathodic shift of its electrochemical potentials and red shift of absorption band. This novel neutral anion receptor BPUA binds anions through hydrogen bonding and show high selectivity with $H_2PO_4^-$ over $CH_3CO_2^-,CI^-,{\;}and{\;}HSO_4^-$. The selecivity of H_2PO_4^-$ over $CH_3CO_2^-,CI^-,{\;}and{\;}HSO_4^-$ may be attributed to the stronger hydrogen bonding with urea moiety and also with anthraquinone moiety of BPUA receptor, and also the higher complementarity of the cavity of BPUA for tetrahedral H_2PO_4^-$.