• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2010.05a
• /
• pp.293-294
• /
• 2010

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2010.05a
• /
• pp.663-664
• /
• 2010

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.2
• /
• pp.11-15
• /
• 2013

The wafer bonding process becomes a flexible approach to material and device integration. The bonding strength in 3-dimensional process is crucial factor in various interface bonding process such as silicon to silicon, silicon to metals such as oxides to adhesive intermediates. A measurement method of bonding strength was proposed by utilizing AFM applied CNT probe tip which indicated the relative simplicity in preparation of sample and to have merit capable to measure regardless type of films. Also, New Tool was utilized to measure of tip radius. The cleaned $SiO_2$-Si bonding strength of SPFM indicated 0.089 $J/m^2$, and the cleaning result by RCA 1($NH_4OH:H_2O:H_2O_2$) measured 0.044 $J/m^2$, indicated negligible tolerance which verified the possibility capable to measure accurate bonding strength. And it could be confirmed the effective bonding is possible through SPFM cleaning.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2007.06a
• /
• pp.469-470
• /
• 2007

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.736-737
• /
• 2007

The single point bonding in underground transmission system can induce high voltage on the sheath when ground fault, lightning serge and switching serge occurs, at that time underground cable systems cannot offer a return path of fault current. Accordingly if fault current, which cannot return to ground, flows at the single point bonding, high voltage can be induced in SVL and that voltage can cause aging and breakdown of SVL. Therefore this paper study on the effect of parallel ground conductor at the single point bonding when ground fault and lightning serge occurs by using ATPDraw.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.6
• /
• pp.479-485
• /
• 2002

We have investigated the effects of various wafers cleaning on glass/Si bonding using 4 inch Pyrex glass wafers and 4 inch silicon wafers. The various wafer cleaning methods were examined; SPM(sulfuric-peroxide mixture, $H_2SO_4:H_2O_2$ = 4 : 1, $120^{\circ}C$), RCA(company name, $NH_4OH:H_2O_2:H_2O$ = 1 : 1 : 5, $80^{\circ}C$), and combinations of those. The best room temperature bonding result was achieved when wafers were cleaned by SPM followed by RCA cleaning. The minimum increase in surface roughness measured by AFM(atomic force microscope) confirmed such results. During successive heat treatments, the bonding strength was improved with increased annealing temperatures up to $400^{\circ}C$, but debonding was observed at $450^{\circ}C$. The difference in thermal expansion coefficients between glass and Si wafer led debonding. When annealed at fixed temperatures(300 and $400^{\circ}C$), bonding strength was enhanced until 28 hours, but then decreased for further anneal. To find the cause of decrease in bonding strength in excessively long annealing time, the ion distribution at Si surface was investigated using SIMS(secondary ion mass spectrometry). tons such as sodium, which had been existed only in glass before annealing, were found at Si surface for long annealed samples. Decrease in bonding strength can be caused by the diffused sodium ions to pass the glass/si interface. Therefore, maximum bonding strength can be achieved when the cleaning procedure and the ion concentrations at interface are optimized in glass/Si wafer direct bonding.

• Transactions of Materials Processing
• /
• v.22 no.5
• /
• pp.269-274
• /
• 2013

Experiments and numerical simulations of the incremental upsetting test were carried out to investigate void closure behavior and mechanical characteristic of a 1.5wt%C ultra-high carbon steel. The experimental results showed that the voids become quickly smaller as the reduction ratio increases. The simulation results confirmed this behavior and indicated that the voids were completely closed at a reduction ratio of about 40~45% during incremental upsetting. After the completion of the incremental upsetting tests, the process of diffusion bonding was employed to heal the closed voids in the deformed specimens. To check the appropriate temperature for diffusion bonding, deformed specimens were kept at 800, 900, 1000 and $1100^{\circ}C$ for an hour. In order to investigate the effect of holding time for diffusion bonding at $1100^{\circ}C$, specimens were kept at 10, 20, 30, 40, 50 and 60minutes in the furnace. A distinction between closed and healed voids was clearly established using microstructural observations. In addition, subsequent tensile tests demonstrated that complete healing of a closed void was achieved for diffusion bonding temperatures in the range $900{\sim}1100^{\circ}C$ with a holding time larger than 1 hour.

• Transactions of Materials Processing
• /
• v.31 no.4
• /
• pp.179-185
• /
• 2022

The influence of post-roll bonding heat treatment conditions such as temperature and time on the variation in the diffusion layer, generated at the bonding interface and the subsequent mechanical properties of the roll-bonded Ti grade 1/Al1050/Ti grade 1 sheets, was systematically investigated. The intermetallic compound (IMC) phase generated by post heat treatment conditions adopted in this study was obviously indexed as monolithic TiAl₃. Whereas the thickness of IMC layer generated by annealing at 500 ℃ was approximately 100 nm scale, it drastically increased above 1.5 ㎛ when annealed at 600 ℃. Uniaxial tensile and peel tests were then performed to compare mechanical properties. As a result, the bonding strength drastically increased above 7.9 N/mm by annealing at 600 ℃, which implies that proper annealing condition was a prerequisite, to improving interface bonding strength as well as global elongation properties for Ti/Al/Ti 3-ply sheet.

• Bulletin of the Korean Chemical Society
• /
• v.22 no.7
• /
• pp.693-698
• /
• 2001

Ab initio density functional calculations on the structural isomers, the hydration energies, and the hydrogen bond many-body interactions for gauche-, trans-protonated ethylenediamine-(water)3 complexes (g-enH+(H2O)3, t-enH+(H2O)3) have been performed. The structures and relative stabilities of three representative isomers (cyclic, tripod, open) between g-enH+(H2O)3 and t-enH+(H2O)3 are predicted to be quite different due to the strong interference between intramolecular hydrogen bonding and water hydrogen bond networks in g-enH+(H2O)3. Many-body analyses revealed that the combined repulsive relaxation energy and repulsive nonadditive interactions for the mono-cyclic tripod isomer, not the hydrogen bond cooperativity, are mainly responsible for the greater stability of the bi-cyclic isomer.

• Electronics and Telecommunications Trends
• /
• v.37 no.2
• /
• pp.53-61
• /
• 2022

MicroLEDs have various advantages and application areas and are in the spotlight as next-generation displays. Nevertheless, the commercialization of microLEDs is slow because of high cost as well as difficulties in the transfer, bonding, and bad pixel repairing process. In this study, we review the development trends of transfer, bonding, and defective pixel repair technologies, which are critical for microLED commercialization, focusing on materials that determine these technologies. In addition, we focus on the simultaneous transfer bonding technology developed by the Electronics and Telecommunications Research Institute, which has been attracting enormous research attention recently.