• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.2171-2175
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• 2013

The electronic structure and elastic properties of the 4d transition metal carbides MC (M = Y, Zr, Nb, Rh) were studied by means of extended H$\ddot{u}$ckel tight-binding band electronic structure calculations. As the valence electron population of M increases, the bulk modulus of the MC compounds in the rocksalt structure does not increase monotonically. The dominant covalent bonding in these compounds is found to be M-C bonding, which mainly arises from the interaction between M 4d and C 2p orbitals. The bonding characteristics between M and C atoms affecting the variation of the bulk modulus can be understood on the basis of their electronic structure. The increasing bulk modulus from YC to NbC is associated with stronger interactions between M 4d and C 2p orbitals and the successive filling of M 4d-C 2p bonding states. The decreased bulk modulus for RhC is related to the partial occupation of Rh-C antibonding states.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.138-140
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• 2001

Fluxless flip chip bonding using plasma & ultrasonic wave was investigated in order to evaluate the effect of plasma & ultrasonic treatment on the bondability of the Sn-3.5wt%Ag solder bumped die to TSM-coated glass substrate. The $Ar+10%H_2plasma$ was effective in removing tin oxide on solder surface. The die shear strength of the plasma-treated Si-chip is higher than that of non-treated specimen but lower than that of specimen bonded with flux. The die shear strength with the bonding load at 25W ultrasonic power increased to 0.8N/bump for all bonding temperature but decreased above 1.0N/bump.

• Journal of the Korean Ceramic Society
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• v.30 no.5
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• pp.357-364
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• 1993

Chemical reaction occurred in the interface of Mn-Zn ferrite and glass after bonding. Effects of the formation of reaction layer on the magnetic properties were investigated. The composition of glass was 23PbO-61SiO2-6ZnO-8Na2O-2K2O and the ferrite was chosen to have a high permeability. Toroid samples of ferrites bonded with glasses, were heat-treated at $700^{\circ}C$, 80$0^{\circ}C$ and 90$0^{\circ}C$ for 1h. The reaction was observed to increase with bonding temperature, resulting in the development of reaction layer. Subsequently the initial permeability was found to be decreased. The permeabilities decreased by 25% with increasing bonding temperature from $700^{\circ}C$ to 80$0^{\circ}C$. At the bonding temperature of 90$0^{\circ}C$, the permeability was decreased by 45%, compared to that of 80$0^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.91-96
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• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.109-114
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• 2021

We investigated the effects of atmospheric hydrogen plasma treatment on Cu-Cu direct bonding. Hydrogen plasma was effective in reducing the surface oxide layer of Cu thin film, which was confirmed by GIXRD analysis. It was observed that larger plasma input power and longer treatment time were effective in terms of reduction and surface roughness. The interfacial adhesion energy was measured by DCB test and it was observed to decrease as the bonding temperature decreased, resulting in bonding failure at bonding temperature of 200℃. In case of wet treatment, strong Cu-Cu bonding was observed above bonding temperature of 250℃.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.808-812
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• 2003

We need a lot of manpower and we can cut down a labor cost by applying industrial robots the footwear bonding automation process. In this study, we suggest how to program off-line robot path along a shoe's outsole shape in the footwear bonding process by 5-axis microscribe system like robot arms. This microscribe system development consists 5-axis microscribe mechanics, signal processing circuit, and PC with software. It is the system for making database of a shoe's outsole through the movement of a microscribe with many joints. To do this, first read 5-encoders' pulse values while a robot arm points a shoe's outsole shape from the initial status. Then, calculate a relative shoe's outsole by Denavit-Hatenberg's (D-H) direct Kinematics of known length of links and coordinate values. Next, calculate the encoders' pulse values of the robot arm's rotation and transmitting the angle pulse values to the PC through a circuit. Finally, it is able to display a shoe's outsole at real-time by computing the Denvavit-Hantenberg's (D-H) direct kinematics in the PC. With the coordinate values calculated above, we can draw a bonding gauge-line on the upper. Also, we can make off-line robot path programming compute a shoe's bonding area on the upper. These results will be effectively applied for programming a robot path on off-line and automatically.

• Journal of Radiation Industry
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• v.6 no.1
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• pp.89-94
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• 2012

Three-dimensional network hydrogels were prepared by ${\gamma}$-irradiation of aqueous solutions of poly(vinyl alcohol) (PVA) and glycerol (Gly). Oven-drying was used to measure the gel fraction (G), hydration (H) or swelling behavior (S) of the prepared hydrogels. This study made a hypothesis that hydrogen bonds due to addition of glycerol and change of dry states such as freeze-drying (FD), room-drying (RD) and oven-drying (OD) acts on the G, H, and S. Interesting results on the hydrogen bonding effect in the prepared hydrogels are monitored at different drying conditions. The FD samples have a higher G values with increase in glycerol content as compared with the OD and RD samples. The formation of strong hydrogen bonding network among Gly molecules and hydrogel matrix was considered as the main driving force, resulting in the changes in the G, H, and S of the hydrogels under different drying conditions.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.05
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• pp.35-38
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• 1997

The interfacial bonding energy between laser surface treated HA layer and Ti alloy substrate was investigated using a mechanical push-out tester. The initial slope of shear-stress and reduced displacement curves, maximum interfacial bond strength and bonding energy were calculated from results of the push-out test. The calculated initial slpoes are 38 MPa for the Ti alloy(A), 65 MPa for the sandblast finished specimen(B), 95 MPa for the HA plasma spray coated specimen and 49 MPa for the laser surface treated specimen(D). The maximum interfacial bonding strength are 3 MPa for the A, 19 MPa for the B, 20 MPa for the C, 10 MPa for the D. The interfacial bonding energies are $3.3\times10^{-9}J/mm^2$ for the A, $15.5\times10^{-9}J/mm^2$ for the B, $15.6\times10^{-9}J/mm^2$ for the C and $18.3\times10^{-9}J/mm^2$ for the D. Microscopic observation shows that the breaking of the laser treated specimen had been occured through the boundary between HA layer and polymer resin, but the untreated specimen had been occured through the inside of HA coating layer.

• Journal of the Korean institute of surface engineering
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• v.44 no.2
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• pp.60-67
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• 2011

Ternary B-C-N coatings were deposited on Si(100) wafer substrate from $B_4C$ target by RF magnetron sputtering technique in $Ar+N_2+CH_4$ gas mixture. In this work, the effect of reactant gas ratio, $CH_4/(N_2+CH_4)$ on the composition, kinds and amounts of bonding states comprising B-C-N coatings were investigated using two different bias power sources of continuous and unipolar DCs. In addition, the tribological properties of coatings were studied with the composition and bonding state of coating. It was found that the substrate bias power had an effect on chemical composition, and all of the obtained coatings were nearly amorphous. Main bonding states of coatings were revealed from FTIR analyses to be h-BN, C-C, C-N, and B-C. The amount of C-C bonging mainly increased with increase of the reactant gas ratio. From our studies, both C-C and h-BN bonding states improved the tribological properties but B-C one was found to be harmful on those. The best coating from tribological points of view was found to be $BC_{1.9}N_{2.3}$ composition.

• Journal of the Korean Chemical Society
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• v.38 no.1
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• pp.55-60
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• 1994

Molecular orbital calculations at the extended Huckel level have been carried out for $Cp_2TiSiHPh(1),\;[Cp_2Ti]_2[{\mu}-HSi(HPh)][{\mu}-H] (2),\;and\;[Cp_2TiSiH_2Ph]_2$ (3) complexes which are important intermediates in organosilane polymerization. Stable geometry of complex 1 is not $C_{2V}$, but Cs symmetry and the rotational energy barrier of $SiH_2$ unit is computed to be 14 kcal/mol. The orbital interaction diagrams are studied to characterize the chemical bonding for the electron deficient systems, 2 and 3. It is possible for Si-H to be coordinated to the Ti metal using $\sigma$ bonding.