• Title/Summary/Keyword: H-bonding

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Cu Thickness Effects on Bonding Characteristics in Cu-Cu Direct Bonds (Cu 두께에 따른 Cu-Cu 열 압착 웨이퍼 접합부의 접합 특성 평가)

  • Kim, Jae-Won;Jeong, Myeong-Hyeok;Carmak, Erkan;Kim, Bioh;Matthias, Thorsten;Lee, Hak-Joo;Hyun, Seung-Min;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.4
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    • pp.61-66
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    • 2010

  • Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.

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Ophthalmic Lens Coating by a-C:H Film (수소화된 비정질 탄소박막(a-C:H)에 의한 안경렌즈 코팅)

  • Lee, Won-Jin
    • Journal of Korean Ophthalmic Optics Society
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    • v.8 no.2
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    • pp.91-97
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    • 2003

  • The behaviors of diamond deposition using microwave plasma chemical vapor deposition method have been studied by varying the concentration of methane in the methane - hydrogen gas mixture. The carbonization is checked from peak intensities of D($sp^3$) and G($sp^2$) peaks in Raman spectra. The hydronization and C-H bonding status in films can also be determined from FTIR results. Both the bonding strength of C-H and the ratio of $sp^3$ to $sp^2$ in bonding are found to be slightly dependent of partial pressure of $CH_4$ Judging from above results, we can conclude that the best value for partial pressure of $CH_4$ in growing process of thick films is about 13.8%.

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Variation of the Nanostructural and Optical Features of Porous Silicon with pH Conditions (pH 조건에 따른 기공성 실리콘의 나노구조 및 광학적 특성의 변화)

  • Kim, Hyo-Han;Cho, Nam-Hee
    • Journal of the Korean Ceramic Society
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    • v.50 no.4
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    • pp.294-300
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    • 2013

  • The effect of chemical treatments of porous silicon in organic solvents on its nanostructural and optical features was investigated. When the porous Si was dipped in the organic solvent with various PH values, the morphological, chemical, and structural properties of the porous silicon was sensitively affected by the chemical conditions of the solvents. The size of silicon nanocrystallites in the porous silicon decreased from 5.4 to 3.1 nm with increasing pH values from 1 to 14. After the samples were dipped in the organic solvents, the Si-O-H bonding intensity was increased while that of Si-H bonding decreased. Photoluminescence peaks shifted to a shorter wavelength region in the range of 583 to 735 nm as the pH value increased. PL intensity was affected by the size as well as the volume fraction of the nanocrystalline silicon in the porous silicon.

  • https://doi.org/10.4191/kcers.2013.50.4.294 인용 PDF KSCI