• Journal of the Korean Vacuum Society
• /
• v.16 no.2
• /
• pp.99-104
• /
• 2007

Porous silicon exhibiting dual optical properties, both $Febry-P{\acute{e}}rot$ fringe (optical reflectivity) and photoluminescence had been developed and used as chemical sensors. Porous silicon samples were prepared by an electrochemical etch of p-type silicon wafer (boron-doped, <100> orientation, resistivity ; $1-10{\Omega}cm$). Two different types of porous silicon, fresh porous silicon (Si-H terminated) and oxidized porous silicon (Si-OH terminated)by the thermal oxidation, were prepared. Then the samples were exposed to the vapor of various organics, such as methanol, acetone, hexane, and toluene. Both reflectivity and photoluminescence were simultaneously measured under the exposure of organic vapors for sensing VOC's. These surface-modified samples showed unique respond in both reflectivity and photoluminescence with various organic vapors. While polar molecules exhibit greater quenching photoluminescence, molecules having higher vapor pressure show greater red shift for reflectivity.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.399-399
• /
• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.4
• /
• pp.176-181
• /
• 2003

Rapid densification of a SiC powder with additive 0.5 wt% $B_4$C was conducted by spark plasma sintering (SPS). The unique features of the process are the possibilities of using very fast heating rate and short holding time to obtain fully dense materials. The heating rate and applied pressure were kept to be $100^{\circ}C$/min and 40 MPa, while sintering temperature and soaking time varied to 1800, 1850, 1900 and $1950^{\circ}C$ and 10, 20 and 30 min, respectively. All of the SPS-sintered specimens at $1950^{\circ}C$ reached near-theoretical density. The XRD found that 3C-to-6H transformation at $1850^{\circ}C$. The microstructures of the rapidly densified SiC ceramics consisted of duplex microstructure with ultrafine equiaxed grains under 2 $\mu\textrm{m}$ and elongated grains of 0.5∼2 $\mu\textrm{m}$ wide, length 3∼10 $\mu\textrm{m}$. The biaxial strength increased with the increase of sintering time. Strength of 392.7 MPa was obtained with the fully densified specimen sintered at $1950^{\circ}C$ for 30 min, in agreement with the general tendency that strength increases with decreases pore. On the other hand, the fracture toughness shows the value of 2.17∼2.34 MPa$.$$m^{1/2}$ which might be due to the transgranular fracture mode.

• Bulletin of the Korean Chemical Society
• /
• v.25 no.4
• /
• pp.475-479
• /
• 2004

$TiO_2$ thin films were grown on Si (100) substrates by atomic layer deposition using $[Ti(OPr^i )_2(dmae)_2]$ and water as precursors. The thickness, chemical composition, crystalline structure, and morphology of the deposited films were investigated by transmission electron microscopy, UV spectrometry, X-ray photoelectron pectroscopy, X-ray diffraction, and atomic force microscopy. The results show that $TiO_2$ ALD using $[Ti(OPr^i )_2(dmae)_2]$ as a precursor is self-controlled at temperatures of 100-300$^{\circ}C$. At the growth temperatures below 300$^{\circ}C$, the surface morphology of the $TiO_2$ films is smooth and uniform. The $TiO_2$ film was grown with a preferred orientation toward the [101] direction at 400$^{\circ}C$.

• Journal of ILASS-Korea
• /
• v.18 no.2
• /
• pp.100-105
• /
• 2013

While variable valve actuation or variable valve lift (VVL) is used increasingly in spark ignition (SI) engines to improve the volumetric efficiency or to reduce the pumping losses, it is necessary to understand the impact of variable valve lift and timing on the in-cylinder gas motions and mixing processes. In this paper, characteristics of the in-cylinder flow and fuel distribution for various valve lifts (4, 6, 8, 10 mm) were simulated in a GDI engine. It is expected that the investigation will be helpful in understanding and improving GDI combustion when a VVL system is used. The CFD results showed that a increased valve lift could significantly enhance the mixture and in-cylinder tumble motion because of the accelerated air flow. Also, it can be found that the fuel distribution is more affected by earlier injection (during intake process) than that of later injection (end of compression). These may contribute to an improvement in the air-fuel mixing but also to an optimization of intake and exhaust system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.04a
• /
• pp.68-71
• /
• 2002

The electromagnetic properties and thermal behavior of ferrite cores used in the blocking filter for PLC were investigated as a function of additives. The highest density of 4.98 $g/cm^2$ and permeability of 8221 were obtained to the specimen added $MoO_3$ 400 ppm, $SiO_2$ 100 ppm and CaO 200 ppm since the microstructures were compacted through reduction of pores in the specimen. The permeability was increased up to 13094 at $110^{\circ}C$ with increasing temperature of specimen, however, it was decreased precipitously to under 100 over $110^{\circ}C$. The exothermic behavior was observed that the temperature of specimens became $102^{\circ}C$ at 1MHz. In the consequence, the ferrite core developed by this research will maintain the stable electromagnetic properties since the temperature of ferrite core rose to $93^{\circ}C$ in the range of 10kHz to 450kHz bandwidth qualified for PLC.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.377-377
• /
• 2010

FINEMET type nanocrystalline materials synthesized by controlled crystallization of amorphous ribbons[1] exhibit excellent soft magnetic properties making them attractive for technological applications. Present work reports the electronic structure studies of Co-substituted FINEMET to get information on the effect of successive Co substitution on local environment around Fe and Co atom by using near edge x-ray absorption fine structure (NEXAFS) and x-ray magnetic circular dichroism (XMCD) measurements. NEXAFS spectroscopy and XMCD measurements have been carried out at Fe $L_{3,2}$ and Co $L_{3,2}$-edges to investigate the chemical states and electronic structure of FINEMET [$(Fe_{100-x}Co_x)_{78}Si_9Nb_3Cu_1Ba$](0$L_{3,2}$-edge reveal that Fe is in 2+ state and in tetrahedral symmetry with other elements. The magnetic properties exhibiting soft magnetic behavior[2] are discussed on the basis of the electronic structure studied through XMCD.

• Bulletin of the Korean Chemical Society
• /
• v.20 no.7
• /
• pp.791-795
• /
• 1999

The crystal structure of a cyclopropane sorption complex of dehydrated fully Ca (2+) -exchanged zeolite X, Ca46Si100Al92O384· 30C3H6 (a = 24.988(4) Å), has been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd3 at 21(1)℃. The crystal was prepared by ion exchange in a flowing stream of 0.05M aqueous Ca(NO3)2 for four days, followed by dehydration at 460℃ and 2×10 (-6) Torr for two days, and exposure to 100 Torr of cyclopropane gas at 21(1)℃. The structure was determined in this atmosphere and refined to the final error indices R1 = 0.068 and R2 = 0.082, with 373 reflections for which I > 3σ (I). In this structure, Ca 2+ ions are located at two crystallographic sites. Sixteen Ca 2+ ions fill the octahedral sites I at the centers of the hexagonal prisms (Ca-O = 2.412(9)Å). The remaining 30 Ca 2+ ions are at sites Ⅱ; each extends 0.46Å into the supercage (an increase of 0.16Å upon C3H6 sorption) where it coordinates to three trigonally arranged framework oxygens at 2.311(8)Å. Each of the 30 cyclopropane molecules was found to complex to Ca 2+ ions at site II by the induced dipole interaction (Ca-C = 2.99(4)Å). All carbon atoms in each cyclopropane molecule are equivalent and equidistant from Ca 2+ ions at site II with which they are associated.

• Journal of The Korean Astronomical Society
• /
• v.48 no.6
• /
• pp.365-380
• /
• 2015

We map 6 massive young stellar objects (YSOs) in the CO J=2-1 line and survey 18 massive YSOs, including the six, in the HCO⁺ J=1−0, SiO J=2−1, H₂O 6₁₆ − 5₂₃ maser, and CH₃OH 7₀ − 6₁ A⁺ maser lines. We detect CO bipolar outflows in all the six mapped sources. Four of them are newly discovered (07299−1651, 21306+5540, 22308+5812, 23133+6050), while 05490+2658 is mapped in the CO J=2-1 line for the first time. The detected outflows are much more massive and energetic than outflows from low-mass YSOs with masses >20 M_⊙ and momenta >300 M_⊙ km s⁻¹. They have mass outflow rates (3−6)×10⁻⁴ M_⊙ yr⁻¹, which are at least one order of magnitude greater than those observed in low-mass YSOs. We detect HCO⁺ and SiO line emission in 18 (100%) and 4 (22%) sources, respectively. The HCO⁺ spectra show high-velocity wings in 11 (61%) sources. We detect H₂O maser emission in 13 (72%) sources and 44 GHz CH₃OH maser emission in 8 (44%) sources. Of the detected sources, 5 H₂O and 6 CH₃OH maser sources are new discoveries. 20081+3122 shows high-velocity (>30 km s⁻¹) H₂O maser lines. We find good correlations of the bolometric luminosity of the central (proto)star with the mechanical force, mechanical luminosity, and mass outflow rate of molecular outflow in the bolometric luminosity range of 10⁻¹−10⁶ L_⊙, and identified 3 intermediate- or high-mass counterparts of Class O objects.

• Journal of Surface Science and Engineering
• /
• v.36 no.1
• /
• pp.14-21
• /
• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.