• Economic and Environmental Geology
• /
• v.44 no.5
• /
• pp.359-372
• /
• 2011

TA26 seamount, which is located at south part of Tonga arc, occurs widely hydrothermal plume and is area that sampled hostrock, hydrothermal ore and hydrothermal alteration rock for this study. Hostrocks are basalt and basaltic andesite. Altered rocks by hydrothermal solution consists of plagioclase, pyroxene, pyrite, ilmenite, amorphous silica, barite, smectite, iron sulfates, Fe-Si sulfates and Fe silicates. Gains and losses of major, trace and rare earth elements during wallrock alteration suggest that $K_2O$(+0.04~+0.45 g), $SiO_2$(-6.52~+10.56 g), $H_2O$(-0.03~+6.04 g), $SO_4$(-0.46~+17.54 g), S(-0.46~+13.45 g), total S(-0.51~+16.93 g), Ba(-7.60~+185078.62 g), Sr(-36.18~+3033.08 g), Ag(+54.83 g), Au(+1467.49 g), As(-5.80~+1030.80 g), Cd(+249.78 g), Cu(-100.57~+1357.85 g), Pb(+4.91~+532.65 g), Sb(-0.32~+66.59 g), V(-113.58~+102.94 g) and Zn(-49.56~+14989.92 g) elements are enriched from hydrothermal solution. Therefore, gained(enriched) elements(($K_2O$, $H_2O$, $SO_4$, S, total S, Ba, Sr, Ag, Au, As, Cd, Cu, Pb, Sb, V, Zn) represent a potentially tools for exploration of sea-floor hydrothermal deposits from the Tonga arc.

• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.606-609
• /
• 1995

Ferrite cores are often magnetized under DC-biased field because they have been intensively used in electronic circuits such as an inverter circuit and a switching regulator circuit. Thus we investigated the effects of DC-biased field on magnetic properties in the frequency range of DC-100kHz for two kinds of ferrite cores, TDK PC38 and TDK $H_{3}S$, which have different shapes of B-H loop from each other. The magnetic loss per cycle, W/f, in the $H_{3}S$ core decreased with increasing the strength of DC-biased field, although W/f in the PC38 core increased monotonically with DC-biased field. The observed decreasing tendency differs from the previous result for Si-Fe and ferrite cores, and can be attributed to decrease in eddy current loss as well as that in hysteresis loss.

• ETRI Journal
• /
• v.25 no.2
• /
• pp.65-72
• /
• 2003

To achieve cost and size reductions, we developed a low cost manufacturing technology for RF substrates and a high performance passive process technology for RF integrated passive devices (IPDs). The fabricated substrate is a conventional 6" Si wafer with a 25${\mu}m$ thick $SiO_2$ surface. This substrate showed a very good insertion loss of 0.03 dB/mm at 4 GHz, including the conductive metal loss, with a 50 ${\Omega}$ coplanar transmission line (W=50${\mu}m$, G=20${\mu}m$). Using benzo cyclo butene (BCB) interlayers and a 10 ${\mu}m$ Cu plating process, we made high Q rectangular and circular spiral inductors on Si that had record maximum quality factors of more than 100. The fabricated inductor library showed a maximum quality factor range of 30-120, depending on geometrical parameters and inductance values of 0.35-35 nH. We also fabricated small RF IPDs on a thick oxide Si substrate for use in handheld phone applications, such as antenna switch modules or front end modules, and high-speed wireless LAN applications. The chip sizes of the wafer-level-packaged RF IPDs and wire-bondable RF IPDs were 1.0-1.5$mm^2$ and 0.8-1.0$mm^2$, respectively. They showed very good insertion loss and RF performances. These substrate and passive process technologies will be widely utilized in hand-held RF modules and systems requiring low cost solutions and strict volumetric efficiencies.

• Journal of the Korean Ceramic Society
• /
• v.26 no.1
• /
• pp.139-145
• /
• 1989

An eutectic melt in the system(Bi2O3)0.85·(Nb2O5)0.15-6Bi2O3·SiO2 was unidirectionally solidfield at a rate of 0.5mm/h under a thermal gradient of 100℃/cm. Double crucibles and seed crystal plate were used in order to botain the composite crystals which had uniform microstructure throughout the ingot. The obtained composite crystals showed uniform microstructure, in which needle-like δ-(Bi2O3)0.85·(Nb2O5)0.15 crystals were arrayed in parallel in a matrix of γ-6Bi2O3·SiO2 single crystal. It was found that the <110> direction of δ-(Bi2O3)0.85·(Nb2O5)0.15 crystal was essentially parallel to the <111> direction of γ-6Bi2O3·SiO2 crystal in the composite crystals. A transverse thin plate of the composite crystals showed a high resolution optical transmission like an optical fiber array, and sharp chatoyancy was observed in the cabochon shaped composite crystals. Then, this may be useful for applications such as screen of a cathode ray tube or artificial cat's eye gem stones.

• Tribology and Lubricants
• /
• v.10 no.3
• /
• pp.18-28
• /
• 1994

Sliding friction between a spherical pin of 8mm in diameter and flat (disk) substrates coated with vacuum-deposited thin film was measured under ultra high vacuum pressure for various materials, various rates of film supply (8~210 nm/min), various sliding velocities (1.5~67.0 mm/s). It was found that the most effective lubrication was obtained when the adhesion between $Si_3N_4$ pin and SUS440C disk was high and that between $Si_3N_4$ pin and $Si_3N_4$ disk was low. When In film was used as a lubricant between $Si_3N_4$ pin and stainless steel disk, the friction coefficient had a value as low as 0.04. In this case, the normal load W and the sliding speed V were expressed as 10N and 24 mm/s for $10^{-6}Pa$. The dependence of $\mu$ on the thickness h of the Ag film, which was used as a lubricant between $Si_3N_4$ pin and SUS440C (Q) disk was expressed as $\mu$=0.12 for W=10N and V=24mm/s when the film was thicker than 100nm. A brief discussion on these relations is presented from the viewpoint of the real contact area.

• Journal of Surface Science and Engineering
• /
• v.47 no.6
• /
• pp.354-361
• /
• 2014

In order to utilize silicon carbide (SiC) as an inner part of fluidized bed reactor (FBR) for manufacturing poly-silicon, we have carried out the thermodynamic calculation on the overall reactions including poly-silicon synthesis and compatibility of SiC with FBR process. The resources of silicon included $SiH_4(MS)$, $SiHCl_3(TCS)$ and $SiCl_4(STC)$ and the thermodynamic yield of the FBR with MS, TCS and STC were compared each other with variable range of temperature, pressure and hydrogen to silicon ratio. The silicon yield of MS, TCS and STC were 100%, 28% and 4%, respectively, throughout the conventional FBR conditions. Silicon carbide having high hardness and strength showed strong resistance to granule collisions during the FBR process using a lab-scale reactor. And it also showed quite good compatibility with the typical FBR processes of MS and TCS resources.

• Nuclear Engineering and Technology
• /
• v.53 no.10
• /
• pp.3398-3405
• /
• 2021

This study observed the effect of neutron irradiation and ageing on the microstructure, hardness, and corrosion resistance of SAV-1 (Al-Mg-Si) alloy. The investigated material was irradiated with neutrons to fluences of 10²¹-10²⁶ n/m² in the WWR-K research reactor and kept in dry storage. Long-term irradiation led to an increase in hardness of the alloy and a deterioration of pitting corrosion resistance. Post-irradiation ageing for 1 h at 100-300 ℃ resulted in a decrease in microhardness of the irradiated SAV-1. The effect of post-irradiation ageing on pitting corrosion was made clear through the formation of Guinier-Preston zones and secondary precipitates in the Al matrix. Ageing at 250 ℃ corresponded to the development of stable microstructure and the highest corrosion resistance for the irradiated samples. Mg₂Si, Si, and needle-shaped β" precipitates were formed in SAV-1 alloy that was irradiated with low fluences. β" and clusters of rod-shaped B-type precipitates were observed in highly irradiated samples. The precipitates were similar to those seen in non-irradiated pseudo-binary Al-Mg₂Si alloys with Si excess.

• Journal of Surface Science and Engineering
• /
• v.45 no.1
• /
• pp.20-24
• /
• 2012

Multilayer passivation film on OLED with organic/inorganic hybrid structure as to diminish the thermal stress and expansion was researched to protect device from the direct damage of $O_2$ and $H_2O$ and improve life time characteristics. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The films consist of ITO(150 nm)/ELM200_HIL(50 nm)/ELM002_HTL(30 nm)/$Alq_3$: 1 vol.% Rubrene(30 nm)/$Alq_3$(30 nm) and LiF(0.7 nm)/Al(100 nm) which were formed in that order. Using LiF/$SiN_x$ as a buffer layer was determined because it significantly improved life time characteristics without suffering damage in the process of forming passivation film. Multilayer passivation film on buffer layer didn't produce much change in current efficiency, while the half life time at 1,000 $cd/m^2$ of OLED/LiF/$SiN_x$/E1/$SiN_x$ was 710 hours which showed about 1.5 times longer than OLED/LiF/$SiN_x$/E1 with 498 hours. futhermore, OLED/LiF/$SiN_x$/E1/$SiN_x$/E1/$SiN_x$ with 1301 hours showed about twice than OLED/LiF/$SiN_x$/E1/$SiN_x$ which demonstrated that superior characteristics of life time was obtained in multilayer passivation film. Through the above result, it was suggested using LiF/$SiN_x$ as a buffer layer could reduce the damage from the difference of thermal expansion coefficient in OLED with protective films, and epoxy layer in multilayer passivation film could function like a buffer between $SiN_x$ inorganic layers with relatively large thermal stress.

• Journal of Surface Science and Engineering
• /
• v.37 no.6
• /
• pp.360-365
• /
• 2004

Ti$_3$SiC$_2$ material was synthesized via the powder metallurgical route, and oxidation tested between 900 and $1200^{\circ}C$ in air for up to 100 hr. The oxidation of $Ti_3$$SiC_2$ material resulted in the formation of $TiO_2$and $SiO_2$, accompanying the evolution of CO or $CO_2$ gases from the initial stage of oxidation. The oxidation resistance of $Ti_3$$SiC_2$ mainly owes the protectiveness of highly stoichiometric $SiO_2$. During the initial stage of oxidation, the dominant reaction was the inward transport of oxygen into the matrix. As the oxidation progressed, an outer $TiO_2$ layer and an inner ( $TiO_2$ + $SiO_2$) mixed layer formed. Between these layers and inside the oxide scale, numerous fine voids formed. Numerous, fine oxide grains formed at $900^{\circ}C$ developed into the outer coarse $TiO_2$ grains and an inner fine ($TiO_2$ + $SiO_2$) mixed grains at the higher temperatures. The oxidation resistance of$ Ti_3$SiC$_2$ progressively deteriorated as the oxidation temperature increased, forming thick scales above $1000^{\circ}C$. The outer coarse $TiO_2$ grains formed above $1100^{\circ}C$ grew rapidly mainly along (211).

• The Bulletin of The Korean Astronomical Society
• /
• v.40 no.2
• /
• pp.35.1-35.1
• /
• 2015

We present the results of extinction measurements toward the main ejecta shell of the Cassiopeia A supernova (SN) remnant using the flux ratios between the two near-infrared (NIR) [Fe II] lines at 1.26 and $1.64{\mu}m$. We find a clear correlation between the NIR extinction (E(J-H)) and the radial velocity of ejecta knots, showing that redshifted knots are systematically more obscured than blueshifted ones. This internal "self-extinction" strongly indicates that a large amount of SN dust resides inside and around the main ejecta shell. At one location in the southern part of the shell, we measure E(J-H) by the SN dust of $0.23{\pm}0.05mag$. By analyzing the spectral energy distribution of thermal dust emission at that location, we show that there are warm (~100K) and cool (~40K) SN dust components and that the latter is responsible for the observed E(J-H). We investigate the possible grain species and size of each component and find that the warm SN dust needs to be silicate grains such as $MgSiO_3$, $Mg_2SiO_4$, and $SiO_2$, whereas the cool dust could be either small (${\leq}0.01{\mu}m$) Fe or large (${\geq}0.01{\mu}m$) Si grains. We suggest that the warm and cool dust components in Cassiopeia A represent grain species produced in diffuse SN ejecta and in dense ejecta clumps, respectively.