• Journal of Surface Science and Engineering
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• v.36 no.1
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• pp.9-13
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• 2003

Plasma polymerized organic thin films were deposited on Si(100), glass and metal substrates at $25∼100 ^{\circ}C$ using thiophene and toluene precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30∼100 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency ($P_{k}$), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest $P_{k}$ value of plasma polymerized toluene film (85.27% at 70 W) was higher than that of the plasma polymerized thiophene film (65.17% at 100 W), indicating inhibition of oxygen reduction. The densely packed and tightly interconnected toluene film could act as an efficient barrier layer to the diffusion of molecular oxygen. The result of contact angle measurement showed that the plasma polymerized toluene films have more hydrophobic surface than those of the plasma polymerized thiophene films.

• Journal of Conservation Science
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• v.28 no.3
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• pp.277-283
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• 2012

This study conducted analysis of paint samples from a streetcar No. 381 (Registration Cultural Property No. 467) to identify the characteristics of the modern paint. The samples were analyzed by Microscopic observation, infrared spectroscopy and SEM-EDS. The upper part is consist of 26 layers and the under part is 29 layers. And the layers were painted various thickness from $10{\mu}m$ to $100{\mu}m$, and confirmed that several color had been used. The putty was used for surface treatment before painting. According to the results of infrared spectroscopy, paint specimens were identified as alkyd resin. Some bands such as C-H and C=O stretcing, aromatic, C-H bending, C-O stretching were found in spectra. Inorganic analysis showed that gold color on the surface was used copper-based paint. And type of the putty was lacquer-putty that was consist of kaolin, talc and zinc white.

• Journal of the Mineralogical Society of Korea
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• v.19 no.4 s.50
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• pp.231-238
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• 2006

Transports of heterogeneously charged particles were investigated based on column experiments. Synthesized mono-dispersed ferrihydrite (${\sim}100nm$) and amorphous $SiO_2\;({\sim}40nm\;and\;{\sim}80nm)$ particles, of which surfaces are oppositely charged under pH < 9.0 (ferrihydrite, positive; amorphous silica, negative), were used. $177{\sim}250{\mu}m$ quartz sand was used as a stationary matrix. The results show that even favorable particles (i.e., ferrihydrite) can show a conservative transport through the oppositely charged media (i.e., quartz) when they coexist with humic acid or with much greater number of oppositely charged particles. These results imply that transports of both negatively and positively charged contaminants may be possible at the same time under a condition of heterogeneous colloidal system.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.35-40
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• 1993

A FET(field effect transistor) type lipid sensor was fabricated uy immobilizing lipase enzyme on the gate of pH-ISFET($SiO_{2}/Si_{3}N_{4}$). A water soluble polymer, polyvinyl alcohol(PVA) was modified with 1-methyl-4-(formyl-styryl) pyridinium methosulfate(SbQ) to give a photosensitive membrane(PVA-SbQ) in which lipase was immobilized. The optimum photolithographic conditions were ; spin coating speed $5,000{\sim}6,000$ rpm. UV exposure time $20{\sim}30$ seconds, developing time in water $30{\sim}40$ seconds, and vacuum drying time 45 min. at room temperature with the suspension containing PVA-SbQ aqueous solution(SbQ 1mol%, 10 wt %) $200{\mu}L$, bovine serum albumin (BSA) 7.5 mg, and lipase 10 mg. The lipid sensor showed good linear calibration curve in the range of $10{\sim}100$ mM triacetin as a lipid sample.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.382-382
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• 2010

$TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• Korean Journal of Food Science and Technology
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• v.8 no.4
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• pp.253-259
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• 1976

Two kinds of sepharose-bound pronases were successfully prepared. The immobilized pronase, directly coupled to cyanogen-bromide activated sepharose, retains 22.6% of original specific activity against casein. However, ${\omega}-aminoalkyl$ sepharose immobilized pronases, in which extension arms of ${\omega}-aminoalkyl$ group $(number\;of\;-CH_2-\;is\;8,\;10,\;and\;12)$ are used, retain almost 100% of original specific activity. Studies of enzyme stability, pH dependence, temperature dependence, and Km values are presented.

• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.521-528
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• 2017

To find a recycling method for waste liquid crystal display (LCD) panel glasses, we investigated the synthesis process of zeolite with an ion exchange ability by hydrothermal reaction using waste LCD panel glass as a raw material. It was shown that the waste LCD panel glass can be used as a raw material for the production of zeolites having the ion exchange ability. Following conditions for the synthesis of the zeolite with an ion exchange ability were required : the molar ratio of Si to Al components of the waste LCD glass needs to be 2.0 to 2.8, and the temperature of $100^{\circ}C$ and reaction time of 12 hours are needed for the hydrothermal reaction. Based on the required conditions previously mentioned, the A type zeolite was synthesized when the molar ratio of the Si to Al component was 2.0, and the P type zeolite was produced when the molar ratio was 2.8. The type A zeolite synthesized by using the waste LCD panel glass showed a good ion exchange ability and heavy metal adsorption ability. Also, an excellent ion exchange capacity was observed as the crystal phase grows stably in a cubic phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.71-74
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• 1996

Ta$_2$O$_{5}$ film ale recognized as promising capacitor dielectric for future DRAM\`s. The electrical properties of Ta$_2$O$_{5}$films greatly depend on the heating condition. In the practical fabrication process, several annealing process, such as the annealing of Al in H$_2$(about 40$0^{\circ}C$) and reflow of BPSG (borophosphosilicate glass) film in $N_2$(about 80$0^{\circ}C$), exist after deposition of Ta$_2$O$_{5}$ film. In this paper, we describe the temperature effect on the electrical properties of W/Ta$_2$O$_{5}$/Si structure. The thin film of Ta$_2$O$_{5}$ and tungsten have been deposited on p-si(100) wafer using the sputtering system. The heating temperature was varied from 500 to 90$0^{\circ}C$ in $N_2$for 30min and The degree of temperature is 100\`C. In a log(J/E$^2$) Vs 1/E plot of typical I-V data, we find a linear relationship for the temperature of 500, $600^{\circ}C$ and as deposition. This could indicate Fowler-Nordheim tunneling as the dominant mode of current transports. However, we can not find a linear relationship for the temperature above $700^{\circ}C$. This could not indicate Fowler-Nordheim tunneling as the dominant mode of current transport. The high frequency (1MHz) capacitance-voltage (C-V) of W/Ta$_2$O$_{5}$/Si Capacitor were investigated on the basis of shift in the threshold voltage and dielectric constant. The magnitude of the threshold voltage and dielectric constant depends on the heating temperature, and increases with heating temperature.temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.4
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• pp.190-193
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• 2012

Transparent diamond-like carbon (DLC) films were synthesized on glass using radio frequency plasma enhanced chemical vapor deposition method from the gas mixture of $CH_4$, $SiH_4$ and Ar. The pressure, the rf-power, $CH_4/SiH_4/Ar$ ratio, and the deposition time were 0.1Torr, 100W, 20 : 1 : 1, and 20 min, respectively. The optical transmittances of DLC-deposited glass and uncoated glass were compared with each other in the visible light regions. The DLC-deposited glass showed transmittance of approximately 83 % and 95 % as compared to the uncoated glass for the wavelength of 380 nm and 500 nm, respectively. The hardness and roughness of DLC-coated glass have been measured by nanoindentation and AFM, respectively. The DLC-coated glass showed a little less or similar optical transmittance compared to the uncoated glass, while the hardness of DLC-coated glass was 2.5 times higher than that of the uncoated glass. The deposited DLC film had the very smooth surface and was thicker than 150 nm after deposition for 20 min.